DE69515560D1 - Vorrichtung und Verfahren zum Schutz einer integrierten Schaltung - Google Patents
Vorrichtung und Verfahren zum Schutz einer integrierten SchaltungInfo
- Publication number
- DE69515560D1 DE69515560D1 DE69515560T DE69515560T DE69515560D1 DE 69515560 D1 DE69515560 D1 DE 69515560D1 DE 69515560 T DE69515560 T DE 69515560T DE 69515560 T DE69515560 T DE 69515560T DE 69515560 D1 DE69515560 D1 DE 69515560D1
- Authority
- DE
- Germany
- Prior art keywords
- protecting
- integrated circuit
- integrated
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0259—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/259,240 US5616943A (en) | 1993-09-29 | 1994-06-13 | Electrostatic discharge protection system for mixed voltage application specific integrated circuit design |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69515560D1 true DE69515560D1 (de) | 2000-04-20 |
DE69515560T2 DE69515560T2 (de) | 2000-09-21 |
Family
ID=22984144
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69515560T Expired - Fee Related DE69515560T2 (de) | 1994-06-13 | 1995-06-01 | Vorrichtung und Verfahren zum Schutz einer integrierten Schaltung |
Country Status (4)
Country | Link |
---|---|
US (2) | US5616943A (de) |
EP (1) | EP0688079B1 (de) |
JP (1) | JPH0855965A (de) |
DE (1) | DE69515560T2 (de) |
Families Citing this family (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3019760B2 (ja) * | 1995-11-15 | 2000-03-13 | 日本電気株式会社 | 半導体集積回路装置 |
US5714900A (en) * | 1996-04-12 | 1998-02-03 | Hewlett-Packard Company | Electrical overstress protection device |
US5966599A (en) * | 1996-05-21 | 1999-10-12 | Lsi Logic Corporation | Method for fabricating a low trigger voltage silicon controlled rectifier and thick field device |
US5796638A (en) * | 1996-06-24 | 1998-08-18 | The Board Of Trustees Of The University Of Illinois | Methods, apparatus and computer program products for synthesizing integrated circuits with electrostatic discharge capability and connecting ground rules faults therein |
US6040968A (en) * | 1997-06-30 | 2000-03-21 | Texas Instruments Incorporated | EOS/ESD protection for high density integrated circuits |
US5926353A (en) * | 1998-03-02 | 1999-07-20 | Hewlett-Packard Co. | Method for protecting mixed signal chips from electrostatic discharge |
US6037636A (en) * | 1998-05-19 | 2000-03-14 | National Semiconductor Corporation | Electrostatic discharge protection circuit and method |
US5985705A (en) * | 1998-06-30 | 1999-11-16 | Lsi Logic Corporation | Low threshold voltage MOS transistor and method of manufacture |
WO2000028594A1 (en) * | 1998-11-09 | 2000-05-18 | Koninklijke Philips Electronics N.V. | Over-voltage protection for integrated analog and digital circuits |
US6445039B1 (en) | 1998-11-12 | 2002-09-03 | Broadcom Corporation | System and method for ESD Protection |
US6271999B1 (en) | 1998-11-20 | 2001-08-07 | Taiwan Semiconductor Manufacturing Company | ESD protection circuit for different power supplies |
US8405152B2 (en) | 1999-01-15 | 2013-03-26 | Broadcom Corporation | System and method for ESD protection |
AU3209000A (en) * | 1999-01-15 | 2000-08-01 | Broadcom Corporation | System and method for esd protection |
US7687858B2 (en) * | 1999-01-15 | 2010-03-30 | Broadcom Corporation | System and method for ESD protection |
US6169001B1 (en) | 1999-02-12 | 2001-01-02 | Vanguard International Semiconductor Corporation | CMOS device with deep current path for ESD protection |
US6118640A (en) * | 1999-02-17 | 2000-09-12 | Pericom Semiconductor Corp. | Actively-driven thin-oxide MOS transistor shunt for ESD protection of multiple independent supply busses in a mixed-signal chip |
US6512662B1 (en) | 1999-11-30 | 2003-01-28 | Illinois Institute Of Technology | Single structure all-direction ESD protection for integrated circuits |
JP2001185686A (ja) * | 1999-12-24 | 2001-07-06 | Seiko Epson Corp | 半導体集積装置 |
JP4619511B2 (ja) * | 2000-09-29 | 2011-01-26 | Okiセミコンダクタ株式会社 | 電源電圧供給システムを備えた半導体装置及び電源電圧供給システムを備えた半導体装置に電源電圧を供給する電源電圧供給方法 |
US6750517B1 (en) | 2000-11-06 | 2004-06-15 | Taiwan Semiconductor Manufacturing Company | Device layout to improve ESD robustness in deep submicron CMOS technology |
US6537868B1 (en) * | 2001-11-16 | 2003-03-25 | Taiwan Semiconductor Manufacturing Company | Method for forming novel low leakage current cascaded diode structure |
US6704179B2 (en) | 2002-02-01 | 2004-03-09 | International Business Machines Corporation | Automated hierarchical parameterized ESD network design and checking system |
US6635931B1 (en) | 2002-04-02 | 2003-10-21 | Illinois Institute Of Technology | Bonding pad-oriented all-mode ESD protection structure |
US6757147B1 (en) | 2002-05-03 | 2004-06-29 | Pericom Semiconductor Corp. | Pin-to-pin ESD-protection structure having cross-pin activation |
EP1453092A3 (de) * | 2003-02-27 | 2004-09-08 | NEC Electronics Corporation | Integrierte Halbleiterschaltung und Vorrichtung zum Entwurf einer derartigen Schaltung |
TWI302031B (en) * | 2003-07-16 | 2008-10-11 | Realtek Semiconductor Corp | Cascaded diode structure with deep n-well and method for making the same |
KR100518593B1 (ko) * | 2003-09-04 | 2005-10-04 | 삼성전자주식회사 | 다수개의 전원들을 사용하는 시스템-인-패키지(sip)에내장되는 정전기 방지 회로 |
US7112853B2 (en) * | 2003-12-17 | 2006-09-26 | Broadcom Corporation | System for ESD protection with extra headroom in relatively low supply voltage integrated circuits |
US7187527B2 (en) * | 2004-09-02 | 2007-03-06 | Macronix International Co., Ltd. | Electrostatic discharge conduction device and mixed power integrated circuits using same |
US7277263B2 (en) * | 2004-09-08 | 2007-10-02 | Texas Instruments Incorporated | Local ESD protection for low-capacitance applications |
US7439592B2 (en) * | 2004-12-13 | 2008-10-21 | Broadcom Corporation | ESD protection for high voltage applications |
US7505238B2 (en) * | 2005-01-07 | 2009-03-17 | Agnes Neves Woo | ESD configuration for low parasitic capacitance I/O |
CN100442510C (zh) * | 2005-08-26 | 2008-12-10 | 联咏科技股份有限公司 | 考量电源启动顺序的准位移位器静电放电防护电路 |
JP2008147376A (ja) * | 2006-12-08 | 2008-06-26 | Toshiba Corp | 半導体装置 |
US9069924B2 (en) | 2011-12-29 | 2015-06-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | ESD protection circuit cell |
JP6595948B2 (ja) * | 2016-05-10 | 2019-10-23 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US10742026B2 (en) * | 2018-02-07 | 2020-08-11 | International Business Machines Corporation | Electrostatic protection device |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5077591A (en) * | 1986-09-30 | 1991-12-31 | Texas Instruments Incorporated | Electrostatic discharge protection for semiconductor input devices |
US5060037A (en) * | 1987-04-03 | 1991-10-22 | Texas Instruments Incorporated | Output buffer with enhanced electrostatic discharge protection |
US4990976A (en) * | 1987-11-24 | 1991-02-05 | Nec Corporation | Semiconductor device including a field effect transistor having a protective diode between source and drain thereof |
US4989057A (en) * | 1988-05-26 | 1991-01-29 | Texas Instruments Incorporated | ESD protection for SOI circuits |
US4870530A (en) * | 1988-06-27 | 1989-09-26 | Advanced Micro Devices, Inc. | Electrostatic discharge protection circuitry for any two external pins of an I.C. package |
US5274262A (en) * | 1989-05-17 | 1993-12-28 | David Sarnoff Research Center, Inc. | SCR protection structure and circuit with reduced trigger voltage |
JPH0369141A (ja) * | 1989-08-08 | 1991-03-25 | Nec Corp | セミカスタム半導体集積回路 |
US5159518A (en) * | 1990-01-17 | 1992-10-27 | Vlsi Technology, Inc. | Input protection circuit for CMOS devices |
US5196981A (en) * | 1990-12-28 | 1993-03-23 | National Semiconductor Corporation | ESD protection scheme |
FR2672732B1 (fr) * | 1991-02-12 | 1997-03-21 | Sgs Thomson Microelectronics | Structure monolithique comprenant deux ensembles de diodes de protection bidirectionnelles. |
JP3375659B2 (ja) * | 1991-03-28 | 2003-02-10 | テキサス インスツルメンツ インコーポレイテツド | 静電放電保護回路の形成方法 |
US5208719A (en) * | 1991-08-20 | 1993-05-04 | Vlsi Technology, Inc. | Output pad electrostatic discharge protection circuit for mos devices |
US5287241A (en) * | 1992-02-04 | 1994-02-15 | Cirrus Logic, Inc. | Shunt circuit for electrostatic discharge protection |
US5272097A (en) * | 1992-04-07 | 1993-12-21 | Philip Shiota | Method for fabricating diodes for electrostatic discharge protection and voltage references |
JPH0677415A (ja) * | 1992-08-24 | 1994-03-18 | Kawasaki Steel Corp | 集積回路 |
JP2958202B2 (ja) * | 1992-12-01 | 1999-10-06 | シャープ株式会社 | 半導体装置 |
US5561577A (en) * | 1994-02-02 | 1996-10-01 | Hewlett-Packard Company | ESD protection for IC's |
JP2850801B2 (ja) * | 1995-07-28 | 1999-01-27 | 日本電気株式会社 | 半導体素子 |
-
1994
- 1994-06-13 US US08/259,240 patent/US5616943A/en not_active Expired - Lifetime
-
1995
- 1995-06-01 EP EP95303737A patent/EP0688079B1/de not_active Expired - Lifetime
- 1995-06-01 DE DE69515560T patent/DE69515560T2/de not_active Expired - Fee Related
- 1995-06-12 JP JP7144283A patent/JPH0855965A/ja active Pending
-
1997
- 1997-03-31 US US08/828,246 patent/US6515839B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH0855965A (ja) | 1996-02-27 |
EP0688079B1 (de) | 2000-03-15 |
EP0688079A2 (de) | 1995-12-20 |
EP0688079A3 (de) | 1997-01-15 |
US5616943A (en) | 1997-04-01 |
DE69515560T2 (de) | 2000-09-21 |
US6515839B1 (en) | 2003-02-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8328 | Change in the person/name/address of the agent |
Representative=s name: FIENER, J., PAT.-ANW., 87719 MINDELHEIM |
|
8339 | Ceased/non-payment of the annual fee | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: HYNIX SEMICONDUCTOR INC., ICHON, KYONGGI, KR |