DE69514343T2 - Halbleitereinrichtung mit einer mikrokomponente, die eine starre und eine bewegliche elektrode aufweist - Google Patents

Halbleitereinrichtung mit einer mikrokomponente, die eine starre und eine bewegliche elektrode aufweist

Info

Publication number
DE69514343T2
DE69514343T2 DE69514343T DE69514343T DE69514343T2 DE 69514343 T2 DE69514343 T2 DE 69514343T2 DE 69514343 T DE69514343 T DE 69514343T DE 69514343 T DE69514343 T DE 69514343T DE 69514343 T2 DE69514343 T2 DE 69514343T2
Authority
DE
Germany
Prior art keywords
rigid
semiconductor device
moving electrode
micro component
micro
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69514343T
Other languages
English (en)
Other versions
DE69514343D1 (de
Inventor
Samber Andre De
Wilhelmus Peters
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP BV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of DE69514343D1 publication Critical patent/DE69514343D1/de
Application granted granted Critical
Publication of DE69514343T2 publication Critical patent/DE69514343T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00222—Integrating an electronic processing unit with a micromechanical structure
    • B81C1/00246—Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/135—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by making use of contacts which are actuated by a movable inertial mass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0228—Inertial sensors
    • B81B2201/0235—Accelerometers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/03—Static structures
    • B81B2203/0315—Cavities
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/04—Electrodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2207/00—Microstructural systems or auxiliary parts thereof
    • B81B2207/07—Interconnects
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/07—Integrating an electronic processing unit with a micromechanical structure
    • B81C2203/0707—Monolithic integration, i.e. the electronic processing unit is formed on or in the same substrate as the micromechanical structure
    • B81C2203/0728—Pre-CMOS, i.e. forming the micromechanical structure before the CMOS circuit

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Micromachines (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Pressure Sensors (AREA)
DE69514343T 1994-11-23 1995-10-24 Halbleitereinrichtung mit einer mikrokomponente, die eine starre und eine bewegliche elektrode aufweist Expired - Lifetime DE69514343T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP94203409 1994-11-23
PCT/IB1995/000913 WO1996016435A2 (en) 1994-11-23 1995-10-24 Semiconductor device provided with a microcomponent having a fixed and a movable electrode

Publications (2)

Publication Number Publication Date
DE69514343D1 DE69514343D1 (de) 2000-02-10
DE69514343T2 true DE69514343T2 (de) 2000-08-10

Family

ID=8217402

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69514343T Expired - Lifetime DE69514343T2 (de) 1994-11-23 1995-10-24 Halbleitereinrichtung mit einer mikrokomponente, die eine starre und eine bewegliche elektrode aufweist

Country Status (6)

Country Link
US (1) US5814554A (de)
EP (1) EP0752159B1 (de)
JP (1) JP3936736B2 (de)
KR (1) KR100398292B1 (de)
DE (1) DE69514343T2 (de)
WO (1) WO1996016435A2 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5963788A (en) * 1995-09-06 1999-10-05 Sandia Corporation Method for integrating microelectromechanical devices with electronic circuitry
DE19730715C1 (de) * 1996-11-12 1998-11-26 Fraunhofer Ges Forschung Verfahren zum Herstellen eines mikromechanischen Relais
FI981457A0 (fi) 1998-06-24 1998-06-24 Valtion Teknillinen Mikromekaaninen vaihto- ja tasajännitereferenssilaitteisto
DE19903195B4 (de) * 1999-01-27 2005-05-19 Infineon Technologies Ag Verfahren zur Verbesserung der Qualität von Metalleitbahnen auf Halbleiterstrukturen
US6242363B1 (en) 1999-08-11 2001-06-05 Adc Telecommunications, Inc. Method of etching a wafer layer using a sacrificial wall to form vertical sidewall
US6316282B1 (en) 1999-08-11 2001-11-13 Adc Telecommunications, Inc. Method of etching a wafer layer using multiple layers of the same photoresistant material
US6229640B1 (en) 1999-08-11 2001-05-08 Adc Telecommunications, Inc. Microelectromechanical optical switch and method of manufacture thereof
US6801682B2 (en) 2001-05-18 2004-10-05 Adc Telecommunications, Inc. Latching apparatus for a MEMS optical switch
DE10146545A1 (de) * 2001-09-21 2003-04-10 Merck Patent Gmbh Mikrokomponente
US6824278B2 (en) * 2002-03-15 2004-11-30 Memx, Inc. Self-shadowing MEM structures
US6767751B2 (en) * 2002-05-28 2004-07-27 Silicon Light Machines, Inc. Integrated driver process flow
US8129801B2 (en) * 2006-01-06 2012-03-06 Honeywell International Inc. Discrete stress isolator attachment structures for MEMS sensor packages
US11279614B2 (en) 2019-06-28 2022-03-22 Analog Devices, Inc. Low-parasitic capacitance MEMS inertial sensors and related methods

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4679434A (en) * 1985-07-25 1987-07-14 Litton Systems, Inc. Integrated force balanced accelerometer
US4948757A (en) * 1987-04-13 1990-08-14 General Motors Corporation Method for fabricating three-dimensional microstructures and a high-sensitivity integrated vibration sensor using such microstructures
US4851080A (en) * 1987-06-29 1989-07-25 Massachusetts Institute Of Technology Resonant accelerometer
GB8921722D0 (en) * 1989-09-26 1989-11-08 British Telecomm Micromechanical switch
US5326726A (en) * 1990-08-17 1994-07-05 Analog Devices, Inc. Method for fabricating monolithic chip containing integrated circuitry and suspended microstructure
DE69206770T2 (de) * 1991-12-19 1996-07-11 Motorola Inc Dreiachsiger Beschleunigungsmesser
FR2688315B1 (fr) * 1992-03-09 1994-05-27 Sagem Capteur accelerometrique capacitif et accelerometre non asservi en comportant application.
FR2690275B1 (fr) * 1992-04-21 1994-06-10 Asulab Sa Moyens de positionnement d'un dispositif microelectronique et ensemble de montage d'un tel dispositif.
JP2654602B2 (ja) * 1992-12-25 1997-09-17 日本電気株式会社 半導体力学量センサ
JP3627761B2 (ja) * 1994-03-09 2005-03-09 株式会社デンソー 半導体力学量センサの製造方法

Also Published As

Publication number Publication date
KR970700934A (ko) 1997-02-12
WO1996016435A2 (en) 1996-05-30
WO1996016435A3 (en) 1996-07-18
DE69514343D1 (de) 2000-02-10
EP0752159B1 (de) 2000-01-05
JPH09508503A (ja) 1997-08-26
KR100398292B1 (ko) 2004-07-27
EP0752159A1 (de) 1997-01-08
JP3936736B2 (ja) 2007-06-27
US5814554A (en) 1998-09-29

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8328 Change in the person/name/address of the agent

Representative=s name: EISENFUEHR, SPEISER & PARTNER, 10178 BERLIN

8327 Change in the person/name/address of the patent owner

Owner name: NXP B.V., EINDHOVEN, NL