DE69511816T2 - Struktur zum Schutz gegen Unter-Masse-Strominjektion - Google Patents
Struktur zum Schutz gegen Unter-Masse-StrominjektionInfo
- Publication number
- DE69511816T2 DE69511816T2 DE69511816T DE69511816T DE69511816T2 DE 69511816 T2 DE69511816 T2 DE 69511816T2 DE 69511816 T DE69511816 T DE 69511816T DE 69511816 T DE69511816 T DE 69511816T DE 69511816 T2 DE69511816 T2 DE 69511816T2
- Authority
- DE
- Germany
- Prior art keywords
- protect against
- current injection
- mass current
- against sub
- sub
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000002347 injection Methods 0.000 title 1
- 239000007924 injection Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Element Separation (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/331,690 US5495123A (en) | 1994-10-31 | 1994-10-31 | Structure to protect against below ground current injection |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69511816D1 DE69511816D1 (de) | 1999-10-07 |
DE69511816T2 true DE69511816T2 (de) | 1999-12-23 |
Family
ID=23294956
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69511816T Expired - Fee Related DE69511816T2 (de) | 1994-10-31 | 1995-10-27 | Struktur zum Schutz gegen Unter-Masse-Strominjektion |
Country Status (4)
Country | Link |
---|---|
US (1) | US5495123A (de) |
EP (1) | EP0709889B1 (de) |
JP (1) | JPH08213599A (de) |
DE (1) | DE69511816T2 (de) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0757389B1 (de) * | 1995-07-31 | 2001-09-26 | STMicroelectronics S.r.l. | Hochspannungstreiberschaltung für induktive Lasten |
US5834826A (en) * | 1997-05-08 | 1998-11-10 | Stmicroelectronics, Inc. | Protection against adverse parasitic effects in junction-isolated integrated circuits |
US6737713B2 (en) * | 2001-07-03 | 2004-05-18 | Tripath Technology, Inc. | Substrate connection in an integrated power circuit |
JP2003229502A (ja) * | 2002-02-01 | 2003-08-15 | Mitsubishi Electric Corp | 半導体装置 |
GB0308345D0 (en) * | 2003-04-11 | 2003-05-14 | Power Electronics Design Ct | Power intregrated circuits |
US6815780B1 (en) * | 2003-04-15 | 2004-11-09 | Motorola, Inc. | Semiconductor component with substrate injection protection structure |
US20060086974A1 (en) * | 2004-10-26 | 2006-04-27 | Power Integrations, Inc. | Integrated circuit with multi-length power transistor segments |
US7538396B2 (en) * | 2007-01-19 | 2009-05-26 | Episil Technologies Inc. | Semiconductor device and complementary metal-oxide-semiconductor field effect transistor |
US7411271B1 (en) * | 2007-01-19 | 2008-08-12 | Episil Technologies Inc. | Complementary metal-oxide-semiconductor field effect transistor |
US7514754B2 (en) * | 2007-01-19 | 2009-04-07 | Episil Technologies Inc. | Complementary metal-oxide-semiconductor transistor for avoiding a latch-up problem |
DE102007046607A1 (de) * | 2007-09-28 | 2009-04-02 | Epcos Ag | Elektrisches Vielschichtbauelement sowie Verfahren zur Herstellung eines elektrischen Vielschichtbauelements |
US8476736B2 (en) * | 2011-02-18 | 2013-07-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Low leakage diodes |
KR102495452B1 (ko) | 2016-06-29 | 2023-02-02 | 삼성전자주식회사 | 반도체 장치 |
US10262997B2 (en) * | 2017-09-14 | 2019-04-16 | Vanguard International Semiconductor Corporation | High-voltage LDMOSFET devices having polysilicon trench-type guard rings |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2514466B2 (de) * | 1975-04-03 | 1977-04-21 | Ibm Deutschland Gmbh, 7000 Stuttgart | Integrierte halbleiterschaltung |
US4458158A (en) * | 1979-03-12 | 1984-07-03 | Sprague Electric Company | IC Including small signal and power devices |
US4412142A (en) * | 1980-12-24 | 1983-10-25 | General Electric Company | Integrated circuit incorporating low voltage and high voltage semiconductor devices |
US4819049A (en) * | 1985-09-16 | 1989-04-04 | Tektronix, Inc. | Method of fabricating high voltage and low voltage transistors using an epitaxial layer of uniform thickness |
IT1197279B (it) * | 1986-09-25 | 1988-11-30 | Sgs Microelettronica Spa | Dispositivo integrato per schermare l'iniezione di cariche nel substrato, in particolare in circuiti di pilotaggio di carichi induttivi e/o capacitivi |
JPS63198367A (ja) * | 1987-02-13 | 1988-08-17 | Toshiba Corp | 半導体装置 |
IT1228900B (it) * | 1989-02-27 | 1991-07-09 | Sgs Thomson Microelectronics | Struttura integrata monolitica per sistema di pilotaggio a due stadi con componente circuitale traslatore di livello del segnale di pilotaggio per transistori di potenza. |
US5243214A (en) * | 1992-04-14 | 1993-09-07 | North American Philips Corp. | Power integrated circuit with latch-up prevention |
JPH0697375A (ja) * | 1992-09-17 | 1994-04-08 | Toshiba Corp | 電力用半導体装置 |
EP0607474B1 (de) * | 1993-01-12 | 2001-06-06 | Mitsubishi Denki Kabushiki Kaisha | Integrierte Halbleiterschaltung mit einer Schicht zur Isolation der einzelnen Elemente auf einem Substrat |
-
1994
- 1994-10-31 US US08/331,690 patent/US5495123A/en not_active Expired - Lifetime
-
1995
- 1995-10-27 EP EP95307658A patent/EP0709889B1/de not_active Expired - Lifetime
- 1995-10-27 DE DE69511816T patent/DE69511816T2/de not_active Expired - Fee Related
- 1995-10-31 JP JP7283672A patent/JPH08213599A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
DE69511816D1 (de) | 1999-10-07 |
EP0709889A3 (de) | 1996-06-26 |
US5495123A (en) | 1996-02-27 |
JPH08213599A (ja) | 1996-08-20 |
EP0709889B1 (de) | 1999-09-01 |
EP0709889A2 (de) | 1996-05-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |