DE69508827D1 - Verfahren zur Herstellung langer Siliziumkarbidwhiskern - Google Patents

Verfahren zur Herstellung langer Siliziumkarbidwhiskern

Info

Publication number
DE69508827D1
DE69508827D1 DE69508827T DE69508827T DE69508827D1 DE 69508827 D1 DE69508827 D1 DE 69508827D1 DE 69508827 T DE69508827 T DE 69508827T DE 69508827 T DE69508827 T DE 69508827T DE 69508827 D1 DE69508827 D1 DE 69508827D1
Authority
DE
Germany
Prior art keywords
silicon carbide
carbide whiskers
producing long
long silicon
producing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69508827T
Other languages
English (en)
Other versions
DE69508827T2 (de
Inventor
Vladimir Gribkov
Alexandre Polakov
Daniel Pokrovcky
Vladimir Silaev
Yurii Gorelov
Piotr Lyacota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Airbus Group SAS
VIAM ALL
All Russian Scientific Research Institute of Aviation Materials
Original Assignee
Airbus Group SAS
VIAM ALL
All Russian Scientific Research Institute of Aviation Materials
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Airbus Group SAS, VIAM ALL, All Russian Scientific Research Institute of Aviation Materials filed Critical Airbus Group SAS
Publication of DE69508827D1 publication Critical patent/DE69508827D1/de
Application granted granted Critical
Publication of DE69508827T2 publication Critical patent/DE69508827T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/62227—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products obtaining fibres
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/005—Growth of whiskers or needles
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
DE69508827T 1994-02-17 1995-02-14 Verfahren zur Herstellung langer Siliziumkarbidwhiskern Expired - Fee Related DE69508827T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9401826A FR2716208B1 (fr) 1994-02-17 1994-02-17 Procédé de production de trichites ou wiskers fibreux, longs de carbure de silicium.

Publications (2)

Publication Number Publication Date
DE69508827D1 true DE69508827D1 (de) 1999-05-12
DE69508827T2 DE69508827T2 (de) 1999-11-18

Family

ID=9460190

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69508827T Expired - Fee Related DE69508827T2 (de) 1994-02-17 1995-02-14 Verfahren zur Herstellung langer Siliziumkarbidwhiskern

Country Status (7)

Country Link
US (1) US5614162A (de)
EP (1) EP0668376B1 (de)
JP (1) JPH0891953A (de)
CA (1) CA2142693A1 (de)
DE (1) DE69508827T2 (de)
ES (1) ES2132548T3 (de)
FR (1) FR2716208B1 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2961350B1 (fr) 2010-06-11 2012-08-03 Commissariat Energie Atomique Procede de fabrication de cellules electrochimiques elementaires pour systemes electrochimiques producteurs d'energie ou d'hydrogene, notamment du type sofc et eht
FR2966455B1 (fr) 2010-10-25 2013-05-17 Commissariat Energie Atomique Procede pour revetir une piece d'un revetement de protection contre l'oxydation
FR2983192B1 (fr) 2011-11-25 2014-05-23 Commissariat Energie Atomique Procede pour revetir une piece d'un revetement de protection contre l'oxydation par une technique de depot chimique en phase vapeur, et revetement et piece
CN110498689A (zh) * 2019-08-01 2019-11-26 辽宁科技大学 一种六铝酸钙晶须增强钙铝质耐火材料
CN114480902B (zh) * 2022-01-17 2023-04-28 东南大学 一种抑制max相中金属晶须生长的方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US450453A (en) * 1891-04-14 James ii
GB1242051A (en) * 1967-05-08 1971-08-11 Nat Res Dev Improvements in the manufacture of silicon carbide
US3622272A (en) * 1968-04-01 1971-11-23 Gen Technologies Corp Method of growing silicon carbide whiskers
GB1232617A (de) * 1968-10-21 1971-05-19
US4284612A (en) * 1980-01-28 1981-08-18 Great Lakes Carbon Corporation Preparation of SiC whiskers
JPS6052120B2 (ja) * 1982-06-04 1985-11-18 タテホ化学工業株式会社 炭化珪素の製造方法
US4789537A (en) * 1985-12-30 1988-12-06 The United States Of America As Represented By The United States Department Of Energy Prealloyed catalyst for growing silicon carbide whiskers
JPS63159300A (ja) * 1986-12-23 1988-07-02 Shin Etsu Chem Co Ltd 炭化けい素ウイスカ−の製造方法
US4789536A (en) * 1987-01-20 1988-12-06 J. M. Huber Corporation Process for producing silicon carbide whiskers
US5404836A (en) * 1989-02-03 1995-04-11 Milewski; John V. Method and apparatus for continuous controlled production of single crystal whiskers

Also Published As

Publication number Publication date
CA2142693A1 (fr) 1995-08-18
ES2132548T3 (es) 1999-08-16
FR2716208B1 (fr) 1996-06-07
JPH0891953A (ja) 1996-04-09
US5614162A (en) 1997-03-25
DE69508827T2 (de) 1999-11-18
EP0668376B1 (de) 1999-04-07
EP0668376A1 (de) 1995-08-23
FR2716208A1 (fr) 1995-08-18

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee