DE69505617D1 - Oberflächenbehandlung eines Einkristalls aus LnBa2Cu3O7-x-Oxid - Google Patents

Oberflächenbehandlung eines Einkristalls aus LnBa2Cu3O7-x-Oxid

Info

Publication number
DE69505617D1
DE69505617D1 DE69505617T DE69505617T DE69505617D1 DE 69505617 D1 DE69505617 D1 DE 69505617D1 DE 69505617 T DE69505617 T DE 69505617T DE 69505617 T DE69505617 T DE 69505617T DE 69505617 D1 DE69505617 D1 DE 69505617D1
Authority
DE
Germany
Prior art keywords
lnba2cu3o7
oxide
single crystal
surface treatment
crystal made
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69505617T
Other languages
English (en)
Other versions
DE69505617T2 (de
Inventor
Masaya Konishi
Hiroyuki Fuke
Youichi Enomoto
Yuh Shiohara
Shoji Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Superconductivity Technology Cen Jp
Sumitomo Electric Industries Ltd
Original Assignee
Toshiba Corp
International Superconductivity Technology Center
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, International Superconductivity Technology Center, Sumitomo Electric Industries Ltd filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE69505617D1 publication Critical patent/DE69505617D1/de
Publication of DE69505617T2 publication Critical patent/DE69505617T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/225—Complex oxides based on rare earth copper oxides, e.g. high T-superconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
DE69505617T 1994-09-07 1995-08-30 Oberflächenbehandlung eines Einkristalls aus LnBa2Cu3O7-x-Oxid Expired - Lifetime DE69505617T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24062294A JP3245506B2 (ja) 1994-09-07 1994-09-07 ＬｎＢａ２ Ｃｕ３ Ｏ７−ｘ 単結晶基板の表面処理方法

Publications (2)

Publication Number Publication Date
DE69505617D1 true DE69505617D1 (de) 1998-12-03
DE69505617T2 DE69505617T2 (de) 1999-04-29

Family

ID=17062239

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69505617T Expired - Lifetime DE69505617T2 (de) 1994-09-07 1995-08-30 Oberflächenbehandlung eines Einkristalls aus LnBa2Cu3O7-x-Oxid

Country Status (4)

Country Link
US (1) US5728214A (de)
EP (1) EP0701009B1 (de)
JP (1) JP3245506B2 (de)
DE (1) DE69505617T2 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11346011A (ja) * 1998-03-30 1999-12-14 International Superconductivity Technology Center 酸化物超電導体及びその表面処理方法
US6828507B1 (en) 1999-07-23 2004-12-07 American Superconductor Corporation Enhanced high temperature coated superconductors joined at a cap layer
US6765151B2 (en) * 1999-07-23 2004-07-20 American Superconductor Corporation Enhanced high temperature coated superconductors
CN1364321B (zh) 1999-07-23 2010-06-02 美国超导体公司 多层制品及其制造方法
AU6219200A (en) 1999-08-24 2001-03-19 Electric Power Research Institute, Inc. Surface control alloy substrates and methods of manufacture therefor
US6974501B1 (en) * 1999-11-18 2005-12-13 American Superconductor Corporation Multi-layer articles and methods of making same
US6673387B1 (en) 2000-07-14 2004-01-06 American Superconductor Corporation Control of oxide layer reaction rates
US20020056401A1 (en) * 2000-10-23 2002-05-16 Rupich Martin W. Precursor solutions and methods of using same
US20050016759A1 (en) * 2003-07-21 2005-01-27 Malozemoff Alexis P. High temperature superconducting devices and related methods
JP6169196B2 (ja) * 2013-06-28 2017-07-26 国立研究開発法人産業技術総合研究所 表層超電導体の製造方法および表層超電導体
US10314664B2 (en) 2015-10-07 2019-06-11 Covidien Lp Tissue-removing catheter and tissue-removing element with depth stop

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5274249A (en) * 1991-12-20 1993-12-28 University Of Maryland Superconducting field effect devices with thin channel layer
JP2758338B2 (ja) 1993-02-16 1998-05-28 積水樹脂株式会社 高耐食性道路反射鏡

Also Published As

Publication number Publication date
EP0701009B1 (de) 1998-10-28
JPH0873298A (ja) 1996-03-19
EP0701009A2 (de) 1996-03-13
US5728214A (en) 1998-03-17
DE69505617T2 (de) 1999-04-29
EP0701009A3 (de) 1996-06-12
JP3245506B2 (ja) 2002-01-15

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Legal Events

Date Code Title Description
8328 Change in the person/name/address of the agent

Free format text: WESER & KOLLEGEN, 81245 MUENCHEN

8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: SUMITOMO ELECTRIC INDUSTRIES, LTD., OSAKA, JP KABU

8327 Change in the person/name/address of the patent owner

Owner name: INTERNATIONAL SUPERCONDUCTIVITY TECHNOLOGY CEN, JP

Owner name: SUMITOMO ELECTRIC INDUSTRIES, LTD., OSAKA, JP

8328 Change in the person/name/address of the agent

Representative=s name: MEISSNER, BOLTE & PARTNER GBR, 80538 MUENCHEN