DE69503193T2 - Dioden-Halbleiterlaser auf Basis von Nitridverbindungen der Gruppe III - Google Patents

Dioden-Halbleiterlaser auf Basis von Nitridverbindungen der Gruppe III

Info

Publication number
DE69503193T2
DE69503193T2 DE69503193T DE69503193T DE69503193T2 DE 69503193 T2 DE69503193 T2 DE 69503193T2 DE 69503193 T DE69503193 T DE 69503193T DE 69503193 T DE69503193 T DE 69503193T DE 69503193 T2 DE69503193 T2 DE 69503193T2
Authority
DE
Germany
Prior art keywords
group iii
iii nitride
semiconductor lasers
nitride compounds
diode semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69503193T
Other languages
English (en)
Other versions
DE69503193D1 (de
Inventor
Hisaki Kato
Norikatsu Koide
Masayoshi Koike
Isamu Akasaki
Hiroshi Amano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Science and Technology Agency
Toyoda Gosei Co Ltd
Original Assignee
Research Development Corp of Japan
Toyoda Gosei Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP10605794A external-priority patent/JPH07297495A/ja
Priority claimed from JP10605894A external-priority patent/JPH07297496A/ja
Application filed by Research Development Corp of Japan, Toyoda Gosei Co Ltd filed Critical Research Development Corp of Japan
Publication of DE69503193D1 publication Critical patent/DE69503193D1/de
Application granted granted Critical
Publication of DE69503193T2 publication Critical patent/DE69503193T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0202—Cleaving
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0213—Sapphire, quartz or diamond based substrates

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
DE69503193T 1994-04-20 1995-04-20 Dioden-Halbleiterlaser auf Basis von Nitridverbindungen der Gruppe III Expired - Lifetime DE69503193T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP10605794A JPH07297495A (ja) 1994-04-20 1994-04-20 窒化ガリウム系化合物半導体レーザダイオード
JP10605894A JPH07297496A (ja) 1994-04-20 1994-04-20 ３族窒化物半導体レーザの製造方法

Publications (2)

Publication Number Publication Date
DE69503193D1 DE69503193D1 (de) 1998-08-06
DE69503193T2 true DE69503193T2 (de) 1999-04-15

Family

ID=26446249

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69503193T Expired - Lifetime DE69503193T2 (de) 1994-04-20 1995-04-20 Dioden-Halbleiterlaser auf Basis von Nitridverbindungen der Gruppe III

Country Status (3)

Country Link
US (1) US5604763A (de)
EP (1) EP0688070B1 (de)
DE (1) DE69503193T2 (de)

Families Citing this family (40)

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US6346720B1 (en) * 1995-02-03 2002-02-12 Sumitomo Chemical Company, Limited Layered group III-V compound semiconductor, method of manufacturing the same, and light emitting element
JP3719613B2 (ja) * 1995-04-24 2005-11-24 シャープ株式会社 半導体発光素子
JPH08316582A (ja) * 1995-05-19 1996-11-29 Nec Corp 半導体レーザ
JP2795226B2 (ja) * 1995-07-27 1998-09-10 日本電気株式会社 半導体発光素子及びその製造方法
ID16181A (id) * 1995-12-25 1997-09-11 Sony Corp Alat semi konduktor dengan permukaan terbelah
US6072197A (en) * 1996-02-23 2000-06-06 Fujitsu Limited Semiconductor light emitting device with an active layer made of semiconductor having uniaxial anisotropy
DE69714627T2 (de) * 1996-02-29 2002-12-05 Kyocera Corp Saphir Einkristall, seine Anwendung als Substrat in einem Halbleiterlaserdiode und Verfahren zu ihrer Herstellung
GB2312990B (en) * 1996-05-10 1999-05-12 Sumitomo Chemical Co Device for production of compound semiconductor
JP3239774B2 (ja) * 1996-09-20 2001-12-17 豊田合成株式会社 ３族窒化物半導体発光素子の基板分離方法
US5972730A (en) * 1996-09-26 1999-10-26 Kabushiki Kaisha Toshiba Nitride based compound semiconductor light emitting device and method for producing the same
US5834331A (en) * 1996-10-17 1998-11-10 Northwestern University Method for making III-Nitride laser and detection device
JPH10215031A (ja) * 1997-01-30 1998-08-11 Hewlett Packard Co <Hp> 半導体レーザ素子
EP1014455B1 (de) 1997-07-25 2006-07-12 Nichia Corporation Halbleitervorrichtung aus einer nitridverbindung
RU2186447C2 (ru) * 1997-11-28 2002-07-27 Котелянский Иосиф Моисеевич Полупроводниковый прибор
US6252254B1 (en) 1998-02-06 2001-06-26 General Electric Company Light emitting device with phosphor composition
US6086673A (en) * 1998-04-02 2000-07-11 Massachusetts Institute Of Technology Process for producing high-quality III-V nitride substrates
JPH11340576A (ja) * 1998-05-28 1999-12-10 Sumitomo Electric Ind Ltd 窒化ガリウム系半導体デバイス
JP4005701B2 (ja) * 1998-06-24 2007-11-14 シャープ株式会社 窒素化合物半導体膜の形成方法および窒素化合物半導体素子
TW418549B (en) * 1998-06-26 2001-01-11 Sharp Kk Crystal growth method for nitride semiconductor, nitride semiconductor light emitting device, and method for producing the same
JP4352473B2 (ja) * 1998-06-26 2009-10-28 ソニー株式会社 半導体装置の製造方法
TW451535B (en) * 1998-09-04 2001-08-21 Sony Corp Semiconductor device and package, and fabrication method thereof
JP3262080B2 (ja) 1998-09-25 2002-03-04 株式会社村田製作所 半導体発光素子
US6299338B1 (en) 1998-11-30 2001-10-09 General Electric Company Decorative lighting apparatus with light source and luminescent material
US6429583B1 (en) 1998-11-30 2002-08-06 General Electric Company Light emitting device with ba2mgsi2o7:eu2+, ba2sio4:eu2+, or (srxcay ba1-x-y)(a1zga1-z)2sr:eu2+phosphors
JP2000244068A (ja) * 1998-12-22 2000-09-08 Pioneer Electronic Corp 窒化物半導体レーザ及びその製造方法
JP3770014B2 (ja) 1999-02-09 2006-04-26 日亜化学工業株式会社 窒化物半導体素子
DE60043536D1 (de) * 1999-03-04 2010-01-28 Nichia Corp Nitridhalbleiterlaserelement
JP2000261105A (ja) * 1999-03-08 2000-09-22 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体レーザ
US6590336B1 (en) * 1999-08-31 2003-07-08 Murata Manufacturing Co., Ltd. Light emitting device having a polar plane piezoelectric film and manufacture thereof
US6265322B1 (en) 1999-09-21 2001-07-24 Agere Systems Guardian Corp. Selective growth process for group III-nitride-based semiconductors
JP2001267555A (ja) 2000-03-22 2001-09-28 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
US6680959B2 (en) * 2000-07-18 2004-01-20 Rohm Co., Ltd. Semiconductor light emitting device and semiconductor laser
DE10036940A1 (de) * 2000-07-28 2002-02-07 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Lumineszenz-Konversions-LED
EP1227176A3 (de) * 2001-01-29 2006-07-05 Matsushita Electric Industrial Co., Ltd. Verfahren zur Herstellung einer Verbindungshalbleiter-Scheibe
JP4901477B2 (ja) * 2004-10-15 2012-03-21 パナソニック株式会社 窒化化合物半導体素子およびその製造方法
JP2006324465A (ja) * 2005-05-19 2006-11-30 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JP2008141187A (ja) * 2006-11-09 2008-06-19 Matsushita Electric Ind Co Ltd 窒化物半導体レーザ装置
US7701995B2 (en) * 2007-07-06 2010-04-20 Nichia Corporation Nitride semiconductor laser element
TWI362769B (en) * 2008-05-09 2012-04-21 Univ Nat Chiao Tung Light emitting device and fabrication method therefor
WO2010035369A1 (ja) * 2008-09-25 2010-04-01 パナソニック株式会社 発光素子及び表示装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3160914B2 (ja) * 1990-12-26 2001-04-25 豊田合成株式会社 窒化ガリウム系化合物半導体レーザダイオード
US5173751A (en) * 1991-01-21 1992-12-22 Pioneer Electronic Corporation Semiconductor light emitting device
US5306662A (en) * 1991-11-08 1994-04-26 Nichia Chemical Industries, Ltd. Method of manufacturing P-type compound semiconductor

Also Published As

Publication number Publication date
US5604763A (en) 1997-02-18
EP0688070A1 (de) 1995-12-20
DE69503193D1 (de) 1998-08-06
EP0688070B1 (de) 1998-07-01

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Representative=s name: KRAMER - BARSKE - SCHMIDTCHEN, 81245 MUENCHEN