DE69429228T2 - Vorrichtung zur Herstellung eines kristallorientierten Dünnfilms - Google Patents

Vorrichtung zur Herstellung eines kristallorientierten Dünnfilms

Info

Publication number
DE69429228T2
DE69429228T2 DE69429228T DE69429228T DE69429228T2 DE 69429228 T2 DE69429228 T2 DE 69429228T2 DE 69429228 T DE69429228 T DE 69429228T DE 69429228 T DE69429228 T DE 69429228T DE 69429228 T2 DE69429228 T2 DE 69429228T2
Authority
DE
Germany
Prior art keywords
crystal
producing
thin film
oriented thin
oriented
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69429228T
Other languages
English (en)
Other versions
DE69429228D1 (de
Inventor
Masao Fukutomi
Shigeki Aoki
Kazunori Komori
Toshihisa Asano
Yoshiaki Tanaka
Hiroshi Maeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsuba Corp
National Research Institute for Metals
Original Assignee
Mitsuba Corp
National Research Institute for Metals
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsuba Corp, National Research Institute for Metals filed Critical Mitsuba Corp
Publication of DE69429228D1 publication Critical patent/DE69429228D1/de
Application granted granted Critical
Publication of DE69429228T2 publication Critical patent/DE69429228T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3435—Applying energy to the substrate during sputtering
    • C23C14/345—Applying energy to the substrate during sputtering using substrate bias
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/083—Oxides of refractory metals or yttrium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/225—Oblique incidence of vaporised material on substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/002—Controlling or regulating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
DE69429228T 1993-09-27 1994-09-27 Vorrichtung zur Herstellung eines kristallorientierten Dünnfilms Expired - Fee Related DE69429228T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP05239512A JP3125907B2 (ja) 1993-09-27 1993-09-27 結晶配向薄膜製造装置

Publications (2)

Publication Number Publication Date
DE69429228D1 DE69429228D1 (de) 2002-01-10
DE69429228T2 true DE69429228T2 (de) 2002-07-25

Family

ID=17045903

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69429228T Expired - Fee Related DE69429228T2 (de) 1993-09-27 1994-09-27 Vorrichtung zur Herstellung eines kristallorientierten Dünnfilms

Country Status (4)

Country Link
US (1) US5567288A (de)
EP (1) EP0645468B1 (de)
JP (1) JP3125907B2 (de)
DE (1) DE69429228T2 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19711137C1 (de) * 1997-03-07 1998-08-13 Siemens Ag Verfahren zum Aufbringen texturierter YSZ-Schichten durch Sputter-Beschichten
CN100532635C (zh) * 2007-01-30 2009-08-26 南京航空航天大学 镁合金表面辉光等离子沉积耐蚀合金层方法
DE102007046260A1 (de) * 2007-09-26 2009-04-09 Uhde Gmbh Verfahren zur Reinigung des Rohgases aus einer Feststoffvergasung
CN102634768B (zh) * 2012-03-31 2014-06-11 浙江金徕镀膜有限公司 一种镀膜工艺中使用的基板固定装置
US11664207B2 (en) * 2018-08-10 2023-05-30 Tokyo Electron Limited Film-forming apparatus, film-forming system, and film-forming method
CN111041437A (zh) * 2019-12-04 2020-04-21 山东科技大学 一种溅射沉积倾斜c轴压电薄膜的辅助装置
DE102020119875A1 (de) * 2020-07-28 2022-02-03 Technische Universität Darmstadt, Körperschaft des öffentlichen Rechts Vorrichtung und Verfahren zum Führen geladener Teilchen

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3530057A (en) * 1967-05-29 1970-09-22 Nat Res Corp Sputtering
US3897325A (en) * 1972-10-20 1975-07-29 Nippon Electric Varian Ltd Low temperature sputtering device
US4297189A (en) * 1980-06-27 1981-10-27 Rockwell International Corporation Deposition of ordered crystalline films
JPS57100627A (en) * 1980-12-12 1982-06-22 Teijin Ltd Manufacture of vertical magnetic recording medium
DE3801309A1 (de) * 1988-01-19 1989-07-27 Leybold Ag Einrichtung fuer die regelung der targetgleichspannung und der biasgleichspannung von sputteranlagen
CZ278295B6 (en) * 1989-08-14 1993-11-17 Fyzikalni Ustav Avcr Process of sputtering layers and apparatus for making the same
US5114556A (en) * 1989-12-27 1992-05-19 Machine Technology, Inc. Deposition apparatus and method for enhancing step coverage and planarization on semiconductor wafers

Also Published As

Publication number Publication date
JP3125907B2 (ja) 2001-01-22
JPH0797293A (ja) 1995-04-11
DE69429228D1 (de) 2002-01-10
EP0645468A1 (de) 1995-03-29
EP0645468B1 (de) 2001-11-28
US5567288A (en) 1996-10-22

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee