DE69428567T2 - Selbst justierter, monolithischer Festkörpermikrolaser mit passiver Güteschaltung durch einem sättigbaren Absorber und Verfahren zu seiner Herstellung - Google Patents
Selbst justierter, monolithischer Festkörpermikrolaser mit passiver Güteschaltung durch einem sättigbaren Absorber und Verfahren zu seiner HerstellungInfo
- Publication number
- DE69428567T2 DE69428567T2 DE69428567T DE69428567T DE69428567T2 DE 69428567 T2 DE69428567 T2 DE 69428567T2 DE 69428567 T DE69428567 T DE 69428567T DE 69428567 T DE69428567 T DE 69428567T DE 69428567 T2 DE69428567 T2 DE 69428567T2
- Authority
- DE
- Germany
- Prior art keywords
- passive
- switching
- self
- adjusted
- production
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
- H01S3/1123—Q-switching
- H01S3/113—Q-switching using intracavity saturable absorbers
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/3523—Non-linear absorption changing by light, e.g. bleaching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
- H01S3/025—Constructional details of solid state lasers, e.g. housings or mountings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/0602—Crystal lasers or glass lasers
- H01S3/0604—Crystal lasers or glass lasers in the form of a plate or disc
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/0602—Crystal lasers or glass lasers
- H01S3/0615—Shape of end-face
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/0627—Construction or shape of active medium the resonator being monolithic, e.g. microlaser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/094049—Guiding of the pump light
- H01S3/094053—Fibre coupled pump, e.g. delivering pump light using a fibre or a fibre bundle
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/094084—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light with pump light recycling, i.e. with reinjection of the unused pump light, e.g. by reflectors or circulators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1601—Solid materials characterised by an active (lasing) ion
- H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
- H01S3/1608—Solid materials characterised by an active (lasing) ion rare earth erbium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1601—Solid materials characterised by an active (lasing) ion
- H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
- H01S3/161—Solid materials characterised by an active (lasing) ion rare earth holmium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1601—Solid materials characterised by an active (lasing) ion
- H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
- H01S3/1611—Solid materials characterised by an active (lasing) ion rare earth neodymium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1601—Solid materials characterised by an active (lasing) ion
- H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
- H01S3/1616—Solid materials characterised by an active (lasing) ion rare earth thulium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1601—Solid materials characterised by an active (lasing) ion
- H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
- H01S3/1618—Solid materials characterised by an active (lasing) ion rare earth ytterbium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/163—Solid materials characterised by a crystal matrix
- H01S3/1631—Solid materials characterised by a crystal matrix aluminate
- H01S3/1635—LaMgAl11O19 (LNA, Lanthanum Magnesium Hexaluminate)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/163—Solid materials characterised by a crystal matrix
- H01S3/164—Solid materials characterised by a crystal matrix garnet
- H01S3/1643—YAG
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/163—Solid materials characterised by a crystal matrix
- H01S3/1645—Solid materials characterised by a crystal matrix halide
- H01S3/1653—YLiF4(YLF, LYF)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/163—Solid materials characterised by a crystal matrix
- H01S3/1655—Solid materials characterised by a crystal matrix silicate
- H01S3/1661—Y2SiO5 [YSO]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/163—Solid materials characterised by a crystal matrix
- H01S3/1671—Solid materials characterised by a crystal matrix vanadate, niobate, tantalate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/163—Solid materials characterised by a crystal matrix
- H01S3/1671—Solid materials characterised by a crystal matrix vanadate, niobate, tantalate
- H01S3/1673—YVO4 [YVO]
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Lasers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9313564A FR2712742B1 (fr) | 1993-11-15 | 1993-11-15 | Microlaser solide, monolithique, autoaligné, à déclenchement passif par absorbant saturable et son procédé de fabrication. |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69428567D1 DE69428567D1 (de) | 2001-11-15 |
DE69428567T2 true DE69428567T2 (de) | 2002-06-27 |
Family
ID=9452835
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69428567T Expired - Lifetime DE69428567T2 (de) | 1993-11-15 | 1994-11-14 | Selbst justierter, monolithischer Festkörpermikrolaser mit passiver Güteschaltung durch einem sättigbaren Absorber und Verfahren zu seiner Herstellung |
Country Status (5)
Country | Link |
---|---|
US (1) | US5495494A (de) |
EP (1) | EP0653824B1 (de) |
JP (1) | JP3636492B2 (de) |
DE (1) | DE69428567T2 (de) |
FR (1) | FR2712742B1 (de) |
Families Citing this family (52)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2725279B1 (fr) * | 1994-10-04 | 1996-10-25 | Commissariat Energie Atomique | Dispositif de telemetrie comportant un microlaser |
US5732100A (en) * | 1995-01-24 | 1998-03-24 | Commissariat A L'energie Atomique | Cavity for a solid microlaser having an optimized efficiency, microlaser using it and its production process |
FR2734096B1 (fr) * | 1995-05-12 | 1997-06-06 | Commissariat Energie Atomique | Cavite microlaser et microlaser solide impulsionnel a declenchement passif et a commande externe |
FR2734092B1 (fr) * | 1995-05-12 | 1997-06-06 | Commissariat Energie Atomique | Microlaser monolithique declenche et materiau non lineaire intracavite |
FR2734094B1 (fr) * | 1995-05-12 | 1997-06-06 | Commissariat Energie Atomique | Emetteur infrarouge monolithique a semi-conducteur pompe par un microlaser solide declenche |
FR2736217B1 (fr) * | 1995-06-27 | 1997-08-08 | Commissariat Energie Atomique | Cavite microlaser et microlaser solide impulsionnel a declenchement actif par micromodulateur |
US5802083A (en) * | 1995-12-11 | 1998-09-01 | Milton Birnbaum | Saturable absorber Q-switches for 2-μm lasers |
FR2745668B1 (fr) * | 1996-03-01 | 1998-04-17 | Commissariat Energie Atomique | Dispositif de mesure precise de la duree d'un intervalle de temps |
FR2747192B1 (fr) * | 1996-04-04 | 1998-04-30 | Commissariat Energie Atomique | Dispositif de detection de gaz a distance comportant un microlaser |
FR2747802B1 (fr) * | 1996-04-18 | 1998-05-15 | Commissariat Energie Atomique | Microdispositif optomecanique, et application a un microdeflecteur optomecanique |
FR2750539B1 (fr) * | 1996-06-28 | 1998-07-24 | Commissariat Energie Atomique | Materiaux laser et microlasers a fortes concentrations en ions actifs, et procedes de fabrication |
FR2751467B1 (fr) * | 1996-07-17 | 1998-10-02 | Commissariat Energie Atomique | Procede d'assemblage de deux structures et dispositif obtenu par le procede. applications aux microlasers |
FR2751796B1 (fr) * | 1996-07-26 | 1998-08-28 | Commissariat Energie Atomique | Microlaser soilde, a pompage optique par laser semi-conducteur a cavite verticale |
FR2751795B1 (fr) * | 1996-07-26 | 1998-08-28 | Commissariat Energie Atomique | Cavite microlaser et microlaser a selection de mode, et procedes de fabrication |
FR2754114B1 (fr) * | 1996-09-30 | 1998-10-30 | Commissariat Energie Atomique | Microlaser solide a declenchement electrooptique a electrodes independantes, et procede de realisation |
FR2754400A1 (fr) * | 1996-10-07 | 1998-04-10 | Commissariat Energie Atomique | Microlaser solide couple dans une fibre et procede de realisation |
USRE38489E1 (en) | 1997-01-30 | 2004-04-06 | Commissariat A L'energie Atomique | Solid microlaser passively switched by a saturable absorber and its production process |
FR2758915B1 (fr) * | 1997-01-30 | 1999-03-05 | Commissariat Energie Atomique | Microlaser solide declenche passivement par absorbant saturable et son procede de fabrication |
FR2765687B1 (fr) * | 1997-07-07 | 1999-07-30 | Commissariat Energie Atomique | Dispositif d'analyse raman comprenant un microlaser |
FR2771222B1 (fr) | 1997-11-14 | 1999-12-17 | Commissariat Energie Atomique | Realisation d'emetteurs hyperfrequences et applications aux radars et aux telecommunications |
FR2771107B1 (fr) * | 1997-11-18 | 1999-12-10 | Commissariat Energie Atomique | Procede de preparation par croissance par epitaxie en phase liquide de couches monocristallines d'aluminate de lanthane et de magnesium (lma) et composants optiques comprenant ces couches |
FR2773000B1 (fr) * | 1997-12-24 | 2000-05-12 | Commissariat Energie Atomique | Cavite laser a declenchement passif a polarisation controlee, microlaser comprenant cette cavite, et procede de fabrication de ce microlaser |
US6072815A (en) * | 1998-02-27 | 2000-06-06 | Litton Systems, Inc. | Microlaser submount assembly and associates packaging method |
US6240113B1 (en) | 1998-02-27 | 2001-05-29 | Litton Systems, Inc. | Microlaser-based electro-optic system and associated fabrication method |
US6057871A (en) * | 1998-07-10 | 2000-05-02 | Litton Systems, Inc. | Laser marking system and associated microlaser apparatus |
FR2783977B1 (fr) * | 1998-09-29 | 2000-11-03 | Commissariat Energie Atomique | Microlaser a pompage module et procede de codage-decodage de l'emission d'un tel microlaser |
FR2784194A1 (fr) * | 1998-10-01 | 2000-04-07 | Commissariat Energie Atomique | Dispositif d'imagerie utilisant un ensemble de microlasers et procede de fabrication de ceux-ci |
FR2787269B1 (fr) | 1998-12-11 | 2001-03-02 | Aerospatiale | Procede de mise en oeuvre d'une unite de service de trafic air |
US6888871B1 (en) | 2000-07-12 | 2005-05-03 | Princeton Optronics, Inc. | VCSEL and VCSEL array having integrated microlenses for use in a semiconductor laser pumped solid state laser system |
US6490081B1 (en) | 2000-07-28 | 2002-12-03 | The Board Of Trustees Of The Leland Stanford Junior University | Method of amplifying optical signals using doped materials with extremely broad bandwidths |
US6778563B2 (en) * | 2001-06-05 | 2004-08-17 | Cobolt Ab | Q-switched laser |
US7065121B2 (en) | 2001-07-24 | 2006-06-20 | Gsi Group Ltd. | Waveguide architecture, waveguide devices for laser processing and beam control, and laser processing applications |
US6738396B2 (en) | 2001-07-24 | 2004-05-18 | Gsi Lumonics Ltd. | Laser based material processing methods and scalable architecture for material processing |
AU2003299543A1 (en) * | 2002-10-04 | 2004-05-04 | Spectra Systems Corporation | Monolithic, side-pumped, passively q-switched solid-state laser |
JP2004296706A (ja) * | 2003-03-26 | 2004-10-21 | Sony Corp | 光共振器及びレーザ発振器 |
FR2885743B1 (fr) * | 2005-05-10 | 2009-07-10 | Commissariat Energie Atomique | Dispositif de pompage optique |
US7822077B2 (en) * | 2007-09-13 | 2010-10-26 | Northrop Grumman Systems Corporation | Thulium doped fiber configuration for enhanced high power operation |
JP5587578B2 (ja) * | 2008-09-26 | 2014-09-10 | ギガフォトン株式会社 | 極端紫外光源装置およびパルスレーザ装置 |
EP2443707B1 (de) | 2009-06-15 | 2015-09-30 | Pantec Biosolutions AG | Monolithischer seitengepumpter festkörperlaser und seine anwendung |
WO2010145855A1 (en) | 2009-06-15 | 2010-12-23 | Pantec Biosolutions Ag | Monolithic, side pumped solid-state laser and method for operating the same |
DE102010050860A1 (de) * | 2010-03-31 | 2011-10-06 | Innolight Innovative Laser Und Systemstechnik Gmbh | Mikrokristall-Laser zur Erzeugung von Laserpulsen |
US9124064B2 (en) | 2010-05-28 | 2015-09-01 | Daniel Kopf | Ultrashort pulse microchip laser, semiconductor laser, and pump method for thin laser media |
US9014228B1 (en) * | 2010-07-08 | 2015-04-21 | Clemson University Research Foundation | Hydrothermal growth of heterogeneous single crystals for solid state laser applications |
US9493887B1 (en) | 2010-07-08 | 2016-11-15 | Clemson University Research Foundation | Heterogeneous single vanadate based crystals for Q-switched lasers and microlasers and method for forming same |
US9469915B2 (en) | 2012-06-22 | 2016-10-18 | Clemson University Research Foundation | Hydrothermal growth of heterogeneous single crystals exhibiting amplified spontaneous emission suppression |
US9711928B2 (en) | 2012-06-22 | 2017-07-18 | Clemson University Research Foundation | Single crystals with internal doping with laser ions prepared by a hydrothermal method |
US8948220B2 (en) | 2012-12-18 | 2015-02-03 | Coherent Gmbh | Wavelength-stabilized microcrystal laser |
US10156025B2 (en) | 2015-05-04 | 2018-12-18 | University Of South Carolina | Monolithic heterogeneous single crystals with multiple regimes for solid state laser applications |
US10998689B2 (en) * | 2018-01-19 | 2021-05-04 | Shailendhar Saraf | Systems, apparatus, and methods for producing ultra stable, single-frequency, single-transverse-mode coherent light in solid-state lasers |
CN109217091A (zh) * | 2018-10-10 | 2019-01-15 | 山东大学 | 一种基于钕掺杂钒酸钇与磷酸钛氧钾胶合晶体的单片集成绿光脉冲激光器及制备 |
US20220344892A1 (en) * | 2019-11-28 | 2022-10-27 | Sony Group Corporation | Laser device, method of manufacturing laser device, laser apparatus, and laser amplifying device |
KR102472976B1 (ko) * | 2020-09-08 | 2022-11-30 | 트라이아이 엘티디. | 신규한 수동 q 스위치 레이저 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3270291A (en) * | 1962-10-22 | 1966-08-30 | Rca Corp | Laser control device using a saturable absorber |
GB1566716A (en) * | 1977-03-15 | 1980-05-08 | Gen Electric Co Ltd | Laser resonators and their manufacture |
US4191931A (en) * | 1978-02-06 | 1980-03-04 | Sanders Associates, Inc. | Cooled laser q-switch |
US5119382A (en) * | 1990-12-24 | 1992-06-02 | Mcdonnell Douglas Corporation | Tetravalent chromium doped passive Q-switch |
US5278855A (en) * | 1992-05-11 | 1994-01-11 | At&T Bell Laboratories | Broadband semiconductor saturable absorber |
-
1993
- 1993-11-15 FR FR9313564A patent/FR2712742B1/fr not_active Expired - Fee Related
-
1994
- 1994-11-14 EP EP94402561A patent/EP0653824B1/de not_active Expired - Lifetime
- 1994-11-14 US US08/339,706 patent/US5495494A/en not_active Expired - Lifetime
- 1994-11-14 JP JP27956494A patent/JP3636492B2/ja not_active Expired - Fee Related
- 1994-11-14 DE DE69428567T patent/DE69428567T2/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
FR2712742A1 (fr) | 1995-05-24 |
EP0653824B1 (de) | 2001-10-10 |
JPH07183608A (ja) | 1995-07-21 |
US5495494A (en) | 1996-02-27 |
DE69428567D1 (de) | 2001-11-15 |
FR2712742B1 (fr) | 1995-12-15 |
JP3636492B2 (ja) | 2005-04-06 |
EP0653824A1 (de) | 1995-05-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE69428567D1 (de) | Selbst justierter, monolithischer Festkörpermikrolaser mit passiver Güteschaltung durch einem sättigbaren Absorber und Verfahren zu seiner Herstellung | |
DE69809604T2 (de) | Durch einen sättigbaren Absorber passiv geschalteter Festkörpermikrolaser und dessen Herstellungsverfahren | |
DE68922157T2 (de) | Poröses keramisches Filter mit Bienenwabenstruktur und Verfahren zu seiner Herstellung. | |
DE69106795D1 (de) | Quarzglas dotiert mit einem seltenen erde-element und verfahren zu deren herstellung. | |
DE3778475D1 (de) | Niedrigkristalline zusammensetzungen aus statistischen propylencopolymeren, verfahren zu deren herstellung und laminierter polypropylen-verbundstoff. | |
DE69420969T2 (de) | Hydrogenierte, durch ringöffnung erhaltene norbornenpolymere, verfahren zu ihrer herstellung und deren verwendung | |
CH616306B5 (de) | Elektronisches modul und verfahren zu seiner herstellung. | |
DE3782470T2 (de) | Keramikwerkstoff mit hoher dielektrischer konstante, sowie verfahren zu seiner herstellung. | |
DE3871014D1 (de) | Hydroxyaethercarbonsaeuren und ihre lactone, verfahren zu deren herstellung und ihre verwendung als korrosionsinhibitor. | |
DE69411624T2 (de) | Stabilisierte, halogenenthaltende Harzzusammensetzung, und zusammengesetztes Metalloxid und Verfahren zu deren Herstellung | |
DE68921246D1 (de) | Gesinterte, oberflächenveredelte Legierung mit und ohne Hartbeschichtung sowie Verfahren zur Herstellung der Legierung. | |
DE3875012T2 (de) | Gesinterter alumoniumoxid-gegenstand mit hoher biegefestigkeit und verfahren zu seiner herstellung. | |
DE69324630T2 (de) | Dotierungsverfahren, Halbleiterbauelement und Verfahren zu seiner Herstellung | |
DE69203838T2 (de) | Sauerstoff-Absorber und Verfahren zu dessen Herstellung. | |
DE69303414T2 (de) | Polykristalliner, lichtdurchlässiger Aluminiumoxidkörper und Verfahren zu seiner Herstellung | |
DE68922514D1 (de) | Oxidischer Hochtemperatur-Supraleiter und Verfahren zu seiner Herstellung. | |
DE69326033D1 (de) | Gehärtetes, poröses Ammoniumnitrat | |
FR2693476B1 (fr) | Produit extérieurement en alliage de Zr, son procédé de fabrication et son utilisation. | |
DE58908507D1 (de) | Neue 10-Ring-Lactone, Verfahren zu ihrer Herstellung und ihre Verwendung. | |
DE69108472T2 (de) | Keramischer Werkstoff, verstärkt durch Aluminiumoxid-Fibers und Verfahren zu seiner Herstellung. | |
DE69427457D1 (de) | Yttrium-enthaltendes Verbundpulver, gesinterter Verbundwerkstoff, und Verfahren zu dessen Herstellung | |
DE3877124D1 (de) | Imidazol-derivate, verfahren zu deren herstellung und deren anwendung als alpha-2-adrenoceptor-antagonisten. | |
EP0657538A3 (de) | Verfahren zur Herstellung von gentechnisch hergestellten Antikörpern in Pflanzen, gentechnisch hergestellte Antikörper und ihre Verwendung in Diagnose und Therapie. | |
AT357054B (de) | Gebinde aus kunststoff und verfahren zu seiner herstellung | |
DE58904607D1 (de) | Substituierte dioxolanylethylamine, verfahren zu ihrer herstellung, ihre verwendung in schaedlingsbekaempfungsmittteln und neue zwischenprodukte. |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |