DE69428485D1 - Gas-Zuführungssystem zur Bildung von Ablagerungen ausgehend von flüssigen Ausgangsprodukten - Google Patents

Gas-Zuführungssystem zur Bildung von Ablagerungen ausgehend von flüssigen Ausgangsprodukten

Info

Publication number
DE69428485D1
DE69428485D1 DE69428485T DE69428485T DE69428485D1 DE 69428485 D1 DE69428485 D1 DE 69428485D1 DE 69428485 T DE69428485 T DE 69428485T DE 69428485 T DE69428485 T DE 69428485T DE 69428485 D1 DE69428485 D1 DE 69428485D1
Authority
DE
Germany
Prior art keywords
deposits
formation
raw materials
gas supply
supply system
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69428485T
Other languages
English (en)
Other versions
DE69428485T2 (de
Inventor
Michael A Costantino
William C Yorke
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Raytheon Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Raytheon Co filed Critical Raytheon Co
Application granted granted Critical
Publication of DE69428485D1 publication Critical patent/DE69428485D1/de
Publication of DE69428485T2 publication Critical patent/DE69428485T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00Fluid handling
    • Y10T137/6416With heating or cooling of the system
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00Fluid handling
    • Y10T137/6416With heating or cooling of the system
    • Y10T137/6606With electric heating element

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
DE1994628485 1993-07-20 1994-07-20 Gas-Zuführungssystem zur Bildung von Ablagerungen ausgehend von flüssigen Ausgangsprodukten Expired - Fee Related DE69428485T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/094,817 US5455014A (en) 1993-07-20 1993-07-20 Liquid deposition source gas delivery system

Publications (2)

Publication Number Publication Date
DE69428485D1 true DE69428485D1 (de) 2001-11-08
DE69428485T2 DE69428485T2 (de) 2002-06-20

Family

ID=22247356

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1994628485 Expired - Fee Related DE69428485T2 (de) 1993-07-20 1994-07-20 Gas-Zuführungssystem zur Bildung von Ablagerungen ausgehend von flüssigen Ausgangsprodukten

Country Status (4)

Country Link
US (1) US5455014A (de)
EP (1) EP0635583B1 (de)
JP (1) JP2672261B2 (de)
DE (1) DE69428485T2 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100378503B1 (ko) * 1994-09-23 2003-05-22 스미스 클라인 비참 코포레이션 열산화장치효율시험시스템
US5996428A (en) * 1995-09-22 1999-12-07 Smithkline Beecham Corporation System to test thermal oxidizer efficiency
US6065481A (en) 1997-03-26 2000-05-23 Fsi International, Inc. Direct vapor delivery of enabling chemical for enhanced HF etch process performance
US6078030A (en) * 1998-09-09 2000-06-20 Millipore Corporation Component heater for use in semiconductor manufacturing equipment
JP2000271471A (ja) 1999-03-24 2000-10-03 Nippon M K S Kk 液体ソース供給システム及びその洗浄方法、気化器
US6129108A (en) * 1999-12-03 2000-10-10 United Semiconductor Corp Fluid delivering system
JP4655423B2 (ja) * 2001-07-05 2011-03-23 株式会社フジキン 流体制御装置
US7090727B2 (en) * 2001-08-17 2006-08-15 Micron Technology, Inc. Heated gas line body feedthrough for vapor and gas delivery systems and methods for employing same
JP3828821B2 (ja) * 2002-03-13 2006-10-04 株式会社堀場エステック 液体材料気化供給装置
US6936086B2 (en) * 2002-09-11 2005-08-30 Planar Systems, Inc. High conductivity particle filter
JP4677805B2 (ja) * 2005-03-22 2011-04-27 株式会社フジキン 流体制御装置
CN1803271B (zh) * 2005-12-14 2010-09-01 微宏科技(湖州)有限公司 分流器及高通量并行催化反应装置
CN104637768B (zh) * 2013-11-15 2017-03-01 中微半导体设备(上海)有限公司 电感耦合等离子体反应腔室气体流量控制系统
US9970108B2 (en) * 2014-08-01 2018-05-15 Lam Research Corporation Systems and methods for vapor delivery in a substrate processing system
DE102019117543A1 (de) 2019-06-28 2020-12-31 Aixtron Se Verfahren zum Kalibrieren/Verifizieren von Massenfluss-Mess/Steuer-Geräten eines Gasmischsystems und Vorrichtung zur Durchführung des Verfahrens
US11486576B2 (en) * 2019-08-23 2022-11-01 Regal Beloit America, Inc. System and method for burner ignition using sensorless constant mass flow draft inducers

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3760773A (en) * 1972-03-06 1973-09-25 Envirotech Corp Gas generating and metering device and method
US4019530A (en) * 1976-02-17 1977-04-26 The Raymond Lee Organization, Inc. Chemical diluting system
US4220460A (en) * 1979-02-05 1980-09-02 Western Electric Company, Inc. Vapor delivery system and method
DE3421263A1 (de) * 1984-06-07 1985-12-12 Siemens AG, 1000 Berlin und 8000 München Vorrichtung zum steuern der zuflussstroemung bei einer gasphasen-abscheideanlage
US5000113A (en) * 1986-12-19 1991-03-19 Applied Materials, Inc. Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
JPS6483663A (en) * 1987-09-25 1989-03-29 Furukawa Electric Co Ltd Liquid raw material evaporating device
JPH0647073B2 (ja) * 1988-07-08 1994-06-22 忠弘 大見 プロセス装置用ガス供給配管装置
US5040046A (en) * 1990-10-09 1991-08-13 Micron Technology, Inc. Process for forming highly conformal dielectric coatings in the manufacture of integrated circuits and product produced thereby
JPH0795527B2 (ja) * 1991-02-05 1995-10-11 株式会社リンテック 液体原料用気化供給器
JPH04295089A (ja) * 1991-03-26 1992-10-20 Kokusai Chodendo Sangyo Gijutsu Kenkyu Center 酸化物超電導膜製造装置
US5252134A (en) * 1991-05-31 1993-10-12 Stauffer Craig M Integrated delivery system for chemical vapor from non-gaseous sources for semiconductor processing
JPH04362176A (ja) * 1991-06-06 1992-12-15 Mitsubishi Electric Corp 半導体装置製造装置
US5240024A (en) * 1992-03-31 1993-08-31 Moore Epitaxial, Inc. Automated process gas supply system for evacuating a process line

Also Published As

Publication number Publication date
EP0635583B1 (de) 2001-10-04
JP2672261B2 (ja) 1997-11-05
EP0635583A1 (de) 1995-01-25
DE69428485T2 (de) 2002-06-20
US5455014A (en) 1995-10-03
JPH07166354A (ja) 1995-06-27

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee