DE69425369D1 - Technik zur herstellung von speicherzellen in einer art und weise, die elektrische kriechstrecken vermeidet - Google Patents

Technik zur herstellung von speicherzellen in einer art und weise, die elektrische kriechstrecken vermeidet

Info

Publication number
DE69425369D1
DE69425369D1 DE69425369T DE69425369T DE69425369D1 DE 69425369 D1 DE69425369 D1 DE 69425369D1 DE 69425369 T DE69425369 T DE 69425369T DE 69425369 T DE69425369 T DE 69425369T DE 69425369 D1 DE69425369 D1 DE 69425369D1
Authority
DE
Germany
Prior art keywords
creeches
avoides
production
electric
technology
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69425369T
Other languages
English (en)
Other versions
DE69425369T2 (de
Inventor
S Sadjadi
Robert Perry
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Semiconductor Corp
Original Assignee
National Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Semiconductor Corp filed Critical National Semiconductor Corp
Application granted granted Critical
Publication of DE69425369D1 publication Critical patent/DE69425369D1/de
Publication of DE69425369T2 publication Critical patent/DE69425369T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/32055—Deposition of semiconductive layers, e.g. poly - or amorphous silicon layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
DE69425369T 1993-03-11 1994-03-08 Technik zur herstellung von speicherzellen in einer art und weise, die elektrische kriechstrecken vermeidet Expired - Lifetime DE69425369T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/031,373 US5427967A (en) 1993-03-11 1993-03-11 Technique for making memory cells in a way which suppresses electrically conductive stringers
PCT/US1994/002522 WO1994020989A1 (en) 1993-03-11 1994-03-08 A technique for making memory cells in a way which suppresses electrically conductive stringers

Publications (2)

Publication Number Publication Date
DE69425369D1 true DE69425369D1 (de) 2000-08-31
DE69425369T2 DE69425369T2 (de) 2001-03-08

Family

ID=21859097

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69425369T Expired - Lifetime DE69425369T2 (de) 1993-03-11 1994-03-08 Technik zur herstellung von speicherzellen in einer art und weise, die elektrische kriechstrecken vermeidet

Country Status (6)

Country Link
US (1) US5427967A (de)
EP (1) EP0689720B1 (de)
JP (1) JPH08507657A (de)
KR (1) KR100297018B1 (de)
DE (1) DE69425369T2 (de)
WO (1) WO1994020989A1 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6110833A (en) * 1998-03-03 2000-08-29 Advanced Micro Devices, Inc. Elimination of oxynitride (ONO) etch residue and polysilicon stringers through isolation of floating gates on adjacent bitlines by polysilicon oxidation
EP0788168A1 (de) * 1996-01-31 1997-08-06 STMicroelectronics S.r.l. Verfahren zur Herstellung nicht-flüchtiger Speicheranordnungen mit schwebendem Gate und so hergestellte Speicheranordnungen
US6046085A (en) * 1997-12-08 2000-04-04 Advanced Micro Devices, Inc. Elimination of poly stringers with straight poly profile
US6001688A (en) * 1997-12-08 1999-12-14 Advanced Micro Devices, Inc. Method of eliminating poly stringer in a memory device
US5933729A (en) * 1997-12-08 1999-08-03 Advanced Micro Devices, Inc. Reduction of ONO fence during self-aligned etch to eliminate poly stringers
US6063668A (en) * 1997-12-18 2000-05-16 Advanced Micro Devices, Inc. Poly I spacer manufacturing process to eliminate polystringers in high density nand-type flash memory devices
US5994239A (en) * 1997-12-18 1999-11-30 Advanced Micro Devices, Inc. Manufacturing process to eliminate polystringers in high density nand-type flash memory devices
US6140246A (en) * 1997-12-18 2000-10-31 Advanced Micro Devices, Inc. In-situ P doped amorphous silicon by NH3 to form oxidation resistant and finer grain floating gates
US6114230A (en) * 1997-12-18 2000-09-05 Advanced Micro Devices, Inc. Nitrogen ion implanted amorphous silicon to produce oxidation resistant and finer grain polysilicon based floating gates
US6281078B1 (en) * 1997-12-18 2001-08-28 Advanced Micro Devices, Inc. Manufacturing process to eliminate ONO fence material in high density NAND-type flash memory devices
US5939750A (en) 1998-01-21 1999-08-17 Advanced Micro Devices Use of implanted ions to reduce oxide-nitride-oxide (ONO) etch residue and polystringers
US6030868A (en) * 1998-03-03 2000-02-29 Advanced Micro Devices, Inc. Elimination of oxynitride (ONO) etch residue and polysilicon stringers through isolation of floating gates on adjacent bitlines by polysilicon oxidation
US6043120A (en) * 1998-03-03 2000-03-28 Advanced Micro Devices, Inc. Elimination of oxynitride (ONO) etch residue and polysilicon stringers through isolation of floating gates on adjacent bitlines by polysilicon oxidation
US6051451A (en) * 1998-04-21 2000-04-18 Advanced Micro Devices, Inc. Heavy ion implant process to eliminate polystringers in high density type flash memory devices
US6187633B1 (en) * 1998-10-09 2001-02-13 Chartered Semiconductor Manufacturing, Ltd. Method of manufacturing a gate structure for a semiconductor memory device with improved breakdown voltage and leakage rate
DE69921086D1 (de) 1999-02-26 2004-11-18 St Microelectronics Srl Herstellungsverfahren für elektronische Speicheranordnungen mit Zellenmatrix mit virtueller Erdung
US6204159B1 (en) * 1999-07-09 2001-03-20 Advanced Micro Devices, Inc. Method of forming select gate to improve reliability and performance for NAND type flash memory devices
US6580120B2 (en) * 2001-06-07 2003-06-17 Interuniversitair Microelektronica Centrum (Imec Vzw) Two bit non-volatile electrically erasable and programmable memory structure, a process for producing said memory structure and methods for programming, reading and erasing said memory structure
US6455440B1 (en) * 2001-07-13 2002-09-24 Macronix International Co., Ltd. Method for preventing polysilicon stringer in memory device

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4151021A (en) * 1977-01-26 1979-04-24 Texas Instruments Incorporated Method of making a high density floating gate electrically programmable ROM
US4462846A (en) * 1979-10-10 1984-07-31 Varshney Ramesh C Semiconductor structure for recessed isolation oxide
JPS5924548B2 (ja) * 1979-12-04 1984-06-09 シャープ株式会社 半導体記憶装置の製造方法
US4458407A (en) * 1983-04-01 1984-07-10 International Business Machines Corporation Process for fabricating semi-conductive oxide between two poly silicon gate electrodes
FR2603128B1 (fr) * 1986-08-21 1988-11-10 Commissariat Energie Atomique Cellule de memoire eprom et son procede de fabrication
FR2620847A1 (fr) * 1987-09-18 1989-03-24 Thomson Semiconducteurs Procede d'auto-alignement des grilles flottantes de transistors a grille flottante d'une memoire non volatile et memoire obtenue selon ce procede
IT1227989B (it) * 1988-12-05 1991-05-20 Sgs Thomson Microelectronics Matrice di celle di memoria eprom con struttura a tovaglia con migliorato rapporto capacitivo e processo per la sua fabbricazione
IT1235690B (it) * 1989-04-07 1992-09-21 Sgs Thomson Microelectronics Procedimento di fabbricazione per una matrice di celle eprom organizzate a tovaglia.
US5019879A (en) * 1990-03-15 1991-05-28 Chiu Te Long Electrically-flash-erasable and electrically-programmable memory storage devices with self aligned tunnel dielectric area
JPH04217373A (ja) * 1990-12-18 1992-08-07 Sharp Corp 不揮発性記憶装置およびその製造方法
JP2573432B2 (ja) * 1991-02-18 1997-01-22 株式会社東芝 半導体集積回路の製造方法
DE69229374T2 (de) * 1991-04-18 2000-01-20 National Semiconductor Corp., Santa Clara Gestapeltes Ätzverfahren für Koppelpunkt-EPROM-Matrizen
JP2680745B2 (ja) * 1991-05-31 1997-11-19 シャープ株式会社 不揮発性半導体記憶装置

Also Published As

Publication number Publication date
EP0689720B1 (de) 2000-07-26
KR960701474A (ko) 1996-02-24
DE69425369T2 (de) 2001-03-08
WO1994020989A1 (en) 1994-09-15
US5427967A (en) 1995-06-27
EP0689720A1 (de) 1996-01-03
JPH08507657A (ja) 1996-08-13
KR100297018B1 (ko) 2001-10-24

Similar Documents

Publication Publication Date Title
DE69425369D1 (de) Technik zur herstellung von speicherzellen in einer art und weise, die elektrische kriechstrecken vermeidet
DE58902995D1 (de) Nichtfluechtige speicherzelle und verfahren zur herstellung.
AU2013495A (en) Photovoltaic element, electrode structure thereof, and process for producing the same
DE69001275D1 (de) Satz zur herstellung und abscheidung von endothelzellen.
DE3581441D1 (de) Sauerstoff enthaltende ferromagnetische amorphe legierungen und verfahren zu ihrer herstellung.
DE69302342D1 (de) Wiedergewinnung von Ethylen bei Direkt-Oxidations-Verfahren zur Herstellung von Ethylenoxid
DE68923251D1 (de) Elektrischer Anschluss, dessen Herstellungsverfahren und Verwendung.
DE19681390T1 (de) Verfahren zur Herstellung von Metalleinlagerungs-Verbundwerkstoffen, die elektrische Isolatoren enthalten
FI854574A0 (fi) Nya koagulantpolypeptider av faktor iii.
DE69332308D1 (de) Lipasen aus hyphozyma
IT1215822B (it) Procedimento di formatura di gruppi completi con separatori microporosi continui per accumulatori elettrici.
DE68918565D1 (de) Verfahren zur herstellung von sonnenzellenkontakten.
DE69010444D1 (de) Anlage zur Herstellung von Schichten.
DE69304353D1 (de) Verfahren zur Herstellung von Festoxid-Brennstoffzellen
DE3676671D1 (de) Askorbat-2-polyphosphatester und deren herstellung.
KR860004948A (ko) 이미다졸리논-함유 중합체 및 그것의 제조방법
DE69805689D1 (de) Verfahren zur Herstellung von Lithium-Kobalt Oxid
DE69005116D1 (de) Batterie mit meereswasser und metallkathode und verfahren zur herstellung.
DE3584005D1 (de) Im gehirn entstehender wachstumsfaktor.
DE69412465D1 (de) Polyolefinmischungen zur herstellung von verschlussdeckeln
DE59401558D1 (de) Dacheindeckungselement zur Gewinnung elektrischer Energie
DE69502571D1 (de) Prozess für die Herstellung von fermentierbarem Material
DE69013810D1 (de) Elektrische Drehmaschine, Verfahren zur Herstellung derselben und diese Maschine enthaltende, hydroelektrische Leistungsanlage.
TR25474A (tr) PROPILEN-ETILEN-COPOLIMERISATLARIN üRETIMINE ILIS- KIN YÖNTEM
NO865178D0 (no) Fremgangsmaate for fremstilling av cellevekstregulerende faktor.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition