DE69422763D1 - Verteilte negative Torstromversorgung - Google Patents

Verteilte negative Torstromversorgung

Info

Publication number
DE69422763D1
DE69422763D1 DE69422763T DE69422763T DE69422763D1 DE 69422763 D1 DE69422763 D1 DE 69422763D1 DE 69422763 T DE69422763 T DE 69422763T DE 69422763 T DE69422763 T DE 69422763T DE 69422763 D1 DE69422763 D1 DE 69422763D1
Authority
DE
Germany
Prior art keywords
power supply
gate power
negative gate
distributed negative
distributed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69422763T
Other languages
English (en)
Other versions
DE69422763T2 (de
Inventor
Chung K Chang
Johnny C Chen
Buskirk Michael A Van
Lee E Cleveland
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Micro Devices Inc
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Application granted granted Critical
Publication of DE69422763D1 publication Critical patent/DE69422763D1/de
Publication of DE69422763T2 publication Critical patent/DE69422763T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
DE69422763T 1993-08-23 1994-08-03 Verteilte negative Torstromversorgung Expired - Fee Related DE69422763T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/109,881 US5406517A (en) 1993-08-23 1993-08-23 Distributed negative gate power supply

Publications (2)

Publication Number Publication Date
DE69422763D1 true DE69422763D1 (de) 2000-03-02
DE69422763T2 DE69422763T2 (de) 2000-08-17

Family

ID=22330067

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69422763T Expired - Fee Related DE69422763T2 (de) 1993-08-23 1994-08-03 Verteilte negative Torstromversorgung

Country Status (6)

Country Link
US (1) US5406517A (de)
EP (1) EP0640985B1 (de)
JP (1) JPH07153288A (de)
KR (1) KR950006851A (de)
DE (1) DE69422763T2 (de)
TW (1) TW396342B (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5548551A (en) * 1995-03-24 1996-08-20 Catalyst Semiconductor Corp. Negative voltage decoding in non-volatile memories
JPH11507463A (ja) * 1995-06-07 1999-06-29 インテル・コーポレーション 負電圧スイッチング回路
EP0750314B1 (de) * 1995-06-19 2000-01-26 STMicroelectronics S.r.l. Negative Wortleitung-Spannungsregelungschaltung für elektrisch löschbare Halbleiterspeicheranordnungen
US5602794A (en) * 1995-09-29 1997-02-11 Intel Corporation Variable stage charge pump
WO1997022971A1 (en) * 1995-12-20 1997-06-26 Intel Corporation A negative voltage switch architecture for a nonvolatile memory
US6009501A (en) 1997-06-18 1999-12-28 Micron Technology, Inc. Method and apparatus for local control signal generation in a memory device
US6032220A (en) * 1997-07-18 2000-02-29 Micron Technology, Inc. Memory device with dual timing and signal latching control
US6134144A (en) * 1997-09-19 2000-10-17 Integrated Memory Technologies, Inc. Flash memory array
US6028780A (en) * 1998-03-12 2000-02-22 Eon Silicon Devices, Inc. Two-phase clock charge pump with power regulation
KR100272511B1 (ko) * 1998-08-10 2000-11-15 김영환 반도체 메모리소자의 고전압 발생회로
DE69921974D1 (de) * 1999-06-24 2004-12-23 St Microelectronics Srl Nichtflüchtige Speicheranordnung, insbesondere vom Flash-Typ
US6266281B1 (en) 2000-02-16 2001-07-24 Advanced Micro Devices, Inc. Method of erasing non-volatile memory cells
US6664846B1 (en) 2000-08-30 2003-12-16 Altera Corporation Cross coupled N-channel negative pump
US6621326B1 (en) 2000-10-26 2003-09-16 Altera Corporation P-channel negative pumps
US7286417B2 (en) * 2005-06-21 2007-10-23 Micron Technology, Inc. Low power dissipation voltage generator
US10847227B2 (en) * 2018-10-16 2020-11-24 Silicon Storage Technology, Inc. Charge pump for use in non-volatile flash memory devices

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59124095A (ja) * 1982-12-29 1984-07-18 Fujitsu Ltd 半導体記憶装置
JPH0748310B2 (ja) * 1987-04-24 1995-05-24 株式会社東芝 半導体集積回路
JPH01282796A (ja) * 1988-05-07 1989-11-14 Mitsubishi Electric Corp 不揮発性半導体記憶装置
US5077691A (en) * 1989-10-23 1991-12-31 Advanced Micro Devices, Inc. Flash EEPROM array with negative gate voltage erase operation
US5168466A (en) * 1991-03-04 1992-12-01 Motorola, Inc. Bias current generator circuit for a sense amplifier
US5282170A (en) * 1992-10-22 1994-01-25 Advanced Micro Devices, Inc. Negative power supply

Also Published As

Publication number Publication date
EP0640985A2 (de) 1995-03-01
EP0640985B1 (de) 2000-01-26
DE69422763T2 (de) 2000-08-17
JPH07153288A (ja) 1995-06-16
US5406517A (en) 1995-04-11
EP0640985A3 (de) 1996-07-10
KR950006851A (ko) 1995-03-21
TW396342B (en) 2000-07-01

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee