DE69422559D1 - Ohmische Elektrode und Verfahren für ihre Herstellung - Google Patents

Ohmische Elektrode und Verfahren für ihre Herstellung

Info

Publication number
DE69422559D1
DE69422559D1 DE69422559T DE69422559T DE69422559D1 DE 69422559 D1 DE69422559 D1 DE 69422559D1 DE 69422559 T DE69422559 T DE 69422559T DE 69422559 T DE69422559 T DE 69422559T DE 69422559 D1 DE69422559 D1 DE 69422559D1
Authority
DE
Germany
Prior art keywords
manufacture
ohmic electrode
ohmic
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69422559T
Other languages
English (en)
Other versions
DE69422559T2 (de
Inventor
Naohiro Toda
Yoshiki Nishibayashi
Tadashi Tomikawa
Shin-Ichi Shikata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Application granted granted Critical
Publication of DE69422559D1 publication Critical patent/DE69422559D1/de
Publication of DE69422559T2 publication Critical patent/DE69422559T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0405—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising semiconducting carbon, e.g. diamond, diamond-like carbon
    • H01L21/0425—Making electrodes
    • H01L21/043—Ohmic electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/34—Materials of the light emitting region containing only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
DE69422559T 1993-09-08 1994-09-06 Ohmische Elektrode und Verfahren für ihre Herstellung Expired - Fee Related DE69422559T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22352893A JP3304541B2 (ja) 1993-09-08 1993-09-08 オーミック電極の形成方法

Publications (2)

Publication Number Publication Date
DE69422559D1 true DE69422559D1 (de) 2000-02-17
DE69422559T2 DE69422559T2 (de) 2000-09-14

Family

ID=16799567

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69422559T Expired - Fee Related DE69422559T2 (de) 1993-09-08 1994-09-06 Ohmische Elektrode und Verfahren für ihre Herstellung

Country Status (4)

Country Link
US (1) US5668382A (de)
EP (1) EP0642169B1 (de)
JP (1) JP3304541B2 (de)
DE (1) DE69422559T2 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5929523A (en) * 1996-03-07 1999-07-27 3C Semiconductor Corporation Os rectifying Schottky and ohmic junction and W/WC/TiC ohmic contacts on SiC
US6388272B1 (en) 1996-03-07 2002-05-14 Caldus Semiconductor, Inc. W/WC/TAC ohmic and rectifying contacts on SiC
KR100563264B1 (ko) * 1998-12-21 2006-05-25 재단법인 포항산업과학연구원 내구성이 향상된 탄성표면파 필터의 전극제조방법
US6955978B1 (en) * 2001-12-20 2005-10-18 Fairchild Semiconductor Corporation Uniform contact
JP2005317676A (ja) * 2004-04-27 2005-11-10 Sony Corp 半導体発光素子、半導体発光装置及び半導体発光素子の製造方法
US7964884B2 (en) * 2004-10-22 2011-06-21 Seoul Opto Device Co., Ltd. GaN compound semiconductor light emitting element and method of manufacturing the same
WO2006087937A1 (ja) * 2005-02-16 2006-08-24 National Institute For Materials Science ダイヤモンド半導体整流素子
CN101771114B (zh) * 2009-01-04 2012-03-07 厦门市三安光电科技有限公司 一种具有复合堆叠式阻挡层金属结构的垂直发光二极管及其制备方法
US8933462B2 (en) * 2011-12-21 2015-01-13 Akhan Semiconductor, Inc. Method of fabricating diamond semiconductor and diamond semiconductor formed according to the method
JP6444718B2 (ja) 2014-12-15 2018-12-26 株式会社東芝 半導体装置
CN116914558B (zh) * 2023-09-13 2023-12-19 苏州长光华芯光电技术股份有限公司 一种半导体激光器接触电极及其制备方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2671259B2 (ja) * 1988-03-28 1997-10-29 住友電気工業株式会社 ショットキー接合半導体装置
JPH02260470A (ja) * 1989-03-30 1990-10-23 Sumitomo Electric Ind Ltd 発光素子
US5055424A (en) * 1989-06-29 1991-10-08 The United States Of America As Represented By The Secretary Of The Navy Method for fabricating ohmic contacts on semiconducting diamond

Also Published As

Publication number Publication date
US5668382A (en) 1997-09-16
DE69422559T2 (de) 2000-09-14
EP0642169B1 (de) 2000-01-12
EP0642169A1 (de) 1995-03-08
JP3304541B2 (ja) 2002-07-22
JPH0778784A (ja) 1995-03-20

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Representative=s name: GROSSE, BOCKHORNI, SCHUMACHER, 81476 MUENCHEN

8339 Ceased/non-payment of the annual fee