DE69419636T2 - Verfahren zur Herstellung von ultrafeinen Kompositpartikeln aus Aluminiumnitrid und Seltenerdnitrid - Google Patents
Verfahren zur Herstellung von ultrafeinen Kompositpartikeln aus Aluminiumnitrid und SeltenerdnitridInfo
- Publication number
- DE69419636T2 DE69419636T2 DE69419636T DE69419636T DE69419636T2 DE 69419636 T2 DE69419636 T2 DE 69419636T2 DE 69419636 T DE69419636 T DE 69419636T DE 69419636 T DE69419636 T DE 69419636T DE 69419636 T2 DE69419636 T2 DE 69419636T2
- Authority
- DE
- Germany
- Prior art keywords
- nitride
- production
- rare earth
- composite particles
- ultrafine composite
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
- C01B21/0602—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with two or more other elements chosen from metals, silicon or boron
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
- C01B21/072—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with aluminium
- C01B21/0722—Preparation by direct nitridation of aluminium
- C01B21/0724—Preparation by direct nitridation of aluminium using a plasma
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/581—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on aluminium nitride
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/38—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
- C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/01—Particle morphology depicted by an image
- C01P2004/04—Particle morphology depicted by an image obtained by TEM, STEM, STM or AFM
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/10—Particle morphology extending in one dimension, e.g. needle-like
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/10—Particle morphology extending in one dimension, e.g. needle-like
- C01P2004/11—Particle morphology extending in one dimension, e.g. needle-like with a prismatic shape
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/20—Particle morphology extending in two dimensions, e.g. plate-like
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/50—Agglomerated particles
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/54—Particles characterised by their aspect ratio, i.e. the ratio of sizes in the longest to the shortest dimension
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8032693 | 1993-03-16 | ||
JP5080325A JPH06271304A (ja) | 1993-03-16 | 1993-03-16 | 窒化アルミニウムと希土類窒化物との複合超微粒子及びその製造方法と超微粒子焼結体 |
JP5246063A JPH06321511A (ja) | 1993-03-16 | 1993-09-08 | 窒化アルミニウム超微粒子及びその製造方法と超微粒子焼結体 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69419636D1 DE69419636D1 (de) | 1999-09-02 |
DE69419636T2 true DE69419636T2 (de) | 2000-02-10 |
Family
ID=27303267
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69419636T Expired - Fee Related DE69419636T2 (de) | 1993-03-16 | 1994-03-10 | Verfahren zur Herstellung von ultrafeinen Kompositpartikeln aus Aluminiumnitrid und Seltenerdnitrid |
Country Status (3)
Country | Link |
---|---|
US (1) | US5468697A (de) |
EP (1) | EP0615952B1 (de) |
DE (1) | DE69419636T2 (de) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1149572A (ja) | 1997-08-01 | 1999-02-23 | Honda Motor Co Ltd | セラミックス複合粒子及びその製造方法 |
US6811760B2 (en) * | 2001-03-30 | 2004-11-02 | General Electric Company | Inorganic acicular bodies and method for producing same |
DE102004048454B4 (de) | 2004-10-05 | 2008-02-07 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Herstellung von Gruppe-III-Nitrid-Volumenkristallen oder-Kristallschichten aus Metallschmelzen |
DE102004048453A1 (de) * | 2004-10-05 | 2006-04-20 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Erhöhung des Umsatzes von Gruppe-III-Metall zu Gruppe-III-Nitrid in einer Gruppe-III-haltigen Metallschmelze |
US7800109B2 (en) * | 2005-04-22 | 2010-09-21 | Chunghwa Picture Tubes, Ltd. | Thin film transistor with electrodes resistant to oxidation and erosion |
EP2955156A4 (de) | 2013-02-08 | 2016-09-21 | Tokuyama Corp | Aluminiumnitridpulver |
WO2017131239A1 (ja) | 2016-01-29 | 2017-08-03 | 株式会社トクヤマ | 窒化アルミニウム粒子 |
KR102557206B1 (ko) * | 2016-12-21 | 2023-07-18 | 엔지케이 인슐레이터 엘티디 | 배향 AlN 소결체 및 그 제법 |
CN106629634B (zh) * | 2016-12-30 | 2018-09-11 | 河北利福光电技术有限公司 | 一种高纯氮化铈粉体及其制备方法和应用 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4322395A (en) * | 1981-05-26 | 1982-03-30 | Honeywell Inc. | Process for the production of aluminum nitride needles |
JPS59227765A (ja) * | 1983-06-04 | 1984-12-21 | 科学技術庁金属材料技術研究所長 | セラミツクスの超微粒子の製造法 |
JPS60161314A (ja) * | 1984-02-02 | 1985-08-23 | Hitachi Metals Ltd | 窒化アルミ粉末の製造法 |
JPS6193828A (ja) * | 1984-10-16 | 1986-05-12 | Natl Res Inst For Metals | 混合超微粉の製造法 |
JPS61151006A (ja) * | 1984-12-24 | 1986-07-09 | Toshiba Corp | 窒化アルミニウム質粉末の製造方法 |
JPS62282635A (ja) * | 1986-05-31 | 1987-12-08 | Natl Res Inst For Metals | 窒化アルミニウム超微粉と耐酸化性アルミニウム超微粉の混合超微粉の製造法 |
JPS62283805A (ja) * | 1986-05-31 | 1987-12-09 | Natl Res Inst For Metals | 窒化アルミニウム超微粉の製造法 |
JPS6317210A (ja) * | 1986-07-10 | 1988-01-25 | Toshiba Corp | 窒化アルミニウム粉末の製造方法 |
US5164263A (en) * | 1986-09-04 | 1992-11-17 | E. I. Du Pont De Nemours & Co. | Aluminum nitride flakes and spheres |
JPS63156007A (ja) * | 1986-12-19 | 1988-06-29 | Denki Kagaku Kogyo Kk | 窒化アルミニウム粉末の製造方法 |
US4793161A (en) * | 1987-11-27 | 1988-12-27 | Kamyr Ab | Effective diffuser/thickener screen backflushing |
EP0371771A3 (de) * | 1988-11-29 | 1990-09-19 | Alcan International Limited | Verfahren zur Herstellung von Aluminiumnitrid und auf diese Weise hergestelltes Aluminiumnitrid |
SU1675201A1 (ru) * | 1989-06-26 | 1991-09-07 | Специальное Конструкторско-Технологическое Бюро Георганических Материалов Института Неорганической Химии Ан Латвсср | Способ получени тонкодисперсных многокомпонентных порошков на основе нитрида алюмини и соединений редкоземельных элементов |
JP2525074B2 (ja) * | 1990-06-15 | 1996-08-14 | 株式会社トクヤマ | 窒化アルミニウム顆粒及びその製造方法 |
US5273699A (en) * | 1992-02-14 | 1993-12-28 | The Dow Chemical Company | Moisture-resistant aluminum nitride powder and methods of making and using |
-
1994
- 1994-03-10 EP EP94103692A patent/EP0615952B1/de not_active Expired - Lifetime
- 1994-03-10 DE DE69419636T patent/DE69419636T2/de not_active Expired - Fee Related
- 1994-03-15 US US08/212,864 patent/US5468697A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0615952B1 (de) | 1999-07-28 |
US5468697A (en) | 1995-11-21 |
EP0615952A3 (de) | 1995-02-22 |
EP0615952A2 (de) | 1994-09-21 |
DE69419636D1 (de) | 1999-09-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |