DE69417943D1 - Stromgesteuerte Vorrichtung mit resonantem Tunneleffekt - Google Patents

Stromgesteuerte Vorrichtung mit resonantem Tunneleffekt

Info

Publication number
DE69417943D1
DE69417943D1 DE69417943T DE69417943T DE69417943D1 DE 69417943 D1 DE69417943 D1 DE 69417943D1 DE 69417943 T DE69417943 T DE 69417943T DE 69417943 T DE69417943 T DE 69417943T DE 69417943 D1 DE69417943 D1 DE 69417943D1
Authority
DE
Germany
Prior art keywords
controlled device
current controlled
tunnel effect
resonant tunnel
resonant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69417943T
Other languages
English (en)
Other versions
DE69417943T2 (de
Inventor
David H Chow
Joel N Schulman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DirecTV Group Inc
Original Assignee
Hughes Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Electronics Corp filed Critical Hughes Electronics Corp
Publication of DE69417943D1 publication Critical patent/DE69417943D1/de
Application granted granted Critical
Publication of DE69417943T2 publication Critical patent/DE69417943T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/88—Tunnel-effect diodes
    • H01L29/882—Resonant tunneling diodes, i.e. RTD, RTBD
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
DE69417943T 1993-03-22 1994-03-18 Stromgesteuerte Vorrichtung mit resonantem Tunneleffekt Expired - Fee Related DE69417943T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US3402193A 1993-03-22 1993-03-22

Publications (2)

Publication Number Publication Date
DE69417943D1 true DE69417943D1 (de) 1999-05-27
DE69417943T2 DE69417943T2 (de) 1999-12-23

Family

ID=21873823

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69417943T Expired - Fee Related DE69417943T2 (de) 1993-03-22 1994-03-18 Stromgesteuerte Vorrichtung mit resonantem Tunneleffekt

Country Status (4)

Country Link
US (1) US5489786A (de)
EP (1) EP0617469B1 (de)
JP (1) JP2677513B2 (de)
DE (1) DE69417943T2 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5606178A (en) * 1995-06-07 1997-02-25 Hughes Electronics Bipolar resonant tunneling transistor
US6188081B1 (en) * 1996-12-11 2001-02-13 Wen-Chau Liu Fabrication process and structure of the metal-insulator-semiconductor-insulator-metal (MISIM) multiple-differential-resistance (MNDR) device
US6320212B1 (en) 1999-09-02 2001-11-20 Hrl Laboratories, Llc. Superlattice fabrication for InAs/GaSb/AISb semiconductor structures
JP5445936B2 (ja) * 2009-11-26 2014-03-19 日本電信電話株式会社 共鳴トンネルダイオードおよびテラヘルツ発振器
US8669785B2 (en) 2012-07-31 2014-03-11 Hewlett-Packard Development Company, L.P. Logic circuits using neuristors
CN104659146A (zh) * 2015-03-06 2015-05-27 中国科学院半导体研究所 基于ⅱ型能带匹配的共振隧穿二极管近红外探测器
CN105244407B (zh) * 2015-08-31 2017-05-03 中国科学院半导体研究所 共振隧穿二极管近红外探测器

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4780749A (en) * 1986-07-01 1988-10-25 Hughes Aircraft Company Double barrier tunnel diode having modified injection layer
JPH01124268A (ja) * 1987-11-10 1989-05-17 Fujitsu Ltd 共鳴トンネリングバリア構造デバイス
JPH0770743B2 (ja) * 1987-11-10 1995-07-31 富士通株式会社 共鳴トンネリングバリア構造デバイス
JPH01241870A (ja) * 1988-03-23 1989-09-26 Nec Corp 共鳴トンネル素子

Also Published As

Publication number Publication date
JP2677513B2 (ja) 1997-11-17
DE69417943T2 (de) 1999-12-23
US5489786A (en) 1996-02-06
EP0617469B1 (de) 1999-04-21
JPH077165A (ja) 1995-01-10
EP0617469A1 (de) 1994-09-28

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee