DE69410052T2 - Begrenzung von Sekundärelektronen bei der Plasmaionenbehandlung - Google Patents

Begrenzung von Sekundärelektronen bei der Plasmaionenbehandlung

Info

Publication number
DE69410052T2
DE69410052T2 DE69410052T DE69410052T DE69410052T2 DE 69410052 T2 DE69410052 T2 DE 69410052T2 DE 69410052 T DE69410052 T DE 69410052T DE 69410052 T DE69410052 T DE 69410052T DE 69410052 T2 DE69410052 T2 DE 69410052T2
Authority
DE
Germany
Prior art keywords
limitation
secondary electrons
plasma ion
ion treatment
treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69410052T
Other languages
English (en)
Other versions
DE69410052D1 (de
Inventor
Jesse N Matossian
John D Williams
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Application granted granted Critical
Publication of DE69410052D1 publication Critical patent/DE69410052D1/de
Publication of DE69410052T2 publication Critical patent/DE69410052T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32412—Plasma immersion ion implantation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32321—Discharge generated by other radiation
    • H01J37/3233—Discharge generated by other radiation using charged particles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/026—Shields

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Plasma Technology (AREA)
DE69410052T 1993-08-27 1994-08-24 Begrenzung von Sekundärelektronen bei der Plasmaionenbehandlung Expired - Fee Related DE69410052T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/113,552 US5498290A (en) 1993-08-27 1993-08-27 Confinement of secondary electrons in plasma ion processing

Publications (2)

Publication Number Publication Date
DE69410052D1 DE69410052D1 (de) 1998-06-10
DE69410052T2 true DE69410052T2 (de) 1999-01-28

Family

ID=22350102

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69410052T Expired - Fee Related DE69410052T2 (de) 1993-08-27 1994-08-24 Begrenzung von Sekundärelektronen bei der Plasmaionenbehandlung

Country Status (7)

Country Link
US (1) US5498290A (de)
EP (1) EP0648857B1 (de)
JP (1) JP2661876B2 (de)
KR (1) KR0134737B1 (de)
CA (1) CA2130309A1 (de)
DE (1) DE69410052T2 (de)
IL (1) IL110761A (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5661043A (en) * 1994-07-25 1997-08-26 Rissman; Paul Forming a buried insulator layer using plasma source ion implantation
US5591268A (en) * 1994-10-14 1997-01-07 Fujitsu Limited Plasma process with radicals
US5653811A (en) 1995-07-19 1997-08-05 Chan; Chung System for the plasma treatment of large area substrates
US5859404A (en) * 1995-10-12 1999-01-12 Hughes Electronics Corporation Method and apparatus for plasma processing a workpiece in an enveloping plasma
US5601654A (en) * 1996-05-31 1997-02-11 The Regents Of The University Of California, Office Of Technology Transfer Flow-through ion beam source
WO1999006110A1 (en) 1997-07-29 1999-02-11 Silicon Genesis Corporation Cluster tool method and apparatus using plasma immersion ion implantation
US6274459B1 (en) 1998-02-17 2001-08-14 Silicon Genesis Corporation Method for non mass selected ion implant profile control
US6113735A (en) * 1998-03-02 2000-09-05 Silicon Genesis Corporation Distributed system and code for control and automation of plasma immersion ion implanter
US6143631A (en) * 1998-05-04 2000-11-07 Micron Technology, Inc. Method for controlling the morphology of deposited silicon on a silicon dioxide substrate and semiconductor devices incorporating such deposited silicon
US6300643B1 (en) * 1998-08-03 2001-10-09 Varian Semiconductor Equipment Associates, Inc. Dose monitor for plasma doping system
US6458723B1 (en) 1999-06-24 2002-10-01 Silicon Genesis Corporation High temperature implant apparatus
US6504159B1 (en) 1999-09-14 2003-01-07 International Business Machines Corporation SOI plasma source ion implantation
TW490703B (en) * 1999-12-13 2002-06-11 Axcelis Tech Inc Diamond-like coated component in an ion implanter for reduced x-ray emissions
KR100462046B1 (ko) * 2001-11-05 2004-12-16 네오뷰코오롱 주식회사 유기물 디스플레이의 무기물막 증착 장치
US7396746B2 (en) * 2004-05-24 2008-07-08 Varian Semiconductor Equipment Associates, Inc. Methods for stable and repeatable ion implantation
US7161203B2 (en) * 2004-06-04 2007-01-09 Micron Technology, Inc. Gated field effect device comprising gate dielectric having different K regions
US20060121704A1 (en) * 2004-12-07 2006-06-08 Varian Semiconductor Equipment Associates, Inc. Plasma ion implantation system with axial electrostatic confinement
US20100021273A1 (en) * 2008-07-28 2010-01-28 Applied Materials, Inc. Concrete vacuum chamber
EP2333824B1 (de) 2009-12-11 2014-04-16 Soitec Herstellung von dünnen SOI-Vorrichtungen
DE102010060910A1 (de) * 2010-11-30 2012-05-31 Roth & Rau Ag Verfahren und Vorrichtung zur Ionenimplantation
BR102016006786B1 (pt) * 2016-03-28 2023-04-18 Scholtz E Fontana Consultoria Ltda - Me Método de densificação de plasma

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5826441A (ja) * 1981-08-10 1983-02-16 Nippon Telegr & Teleph Corp <Ntt> イオン注入装置
US4764394A (en) * 1987-01-20 1988-08-16 Wisconsin Alumni Research Foundation Method and apparatus for plasma source ion implantation
US4925542A (en) * 1988-12-08 1990-05-15 Trw Inc. Plasma plating apparatus and method
US5218179A (en) * 1990-10-10 1993-06-08 Hughes Aircraft Company Plasma source arrangement for ion implantation
US5330800A (en) * 1992-11-04 1994-07-19 Hughes Aircraft Company High impedance plasma ion implantation method and apparatus
US5374456A (en) * 1992-12-23 1994-12-20 Hughes Aircraft Company Surface potential control in plasma processing of materials
US5354381A (en) * 1993-05-07 1994-10-11 Varian Associates, Inc. Plasma immersion ion implantation (PI3) apparatus

Also Published As

Publication number Publication date
EP0648857A1 (de) 1995-04-19
CA2130309A1 (en) 1995-02-28
EP0648857B1 (de) 1998-05-06
KR0134737B1 (ko) 1998-04-20
JPH07169437A (ja) 1995-07-04
KR950006967A (ko) 1995-03-21
US5498290A (en) 1996-03-12
JP2661876B2 (ja) 1997-10-08
DE69410052D1 (de) 1998-06-10
IL110761A0 (en) 1994-11-11
IL110761A (en) 1996-08-04

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee