DE69407925T2 - Durchsichtige Leiter enthaltend Gallium-Indium-Oxide - Google Patents

Durchsichtige Leiter enthaltend Gallium-Indium-Oxide

Info

Publication number
DE69407925T2
DE69407925T2 DE69407925T DE69407925T DE69407925T2 DE 69407925 T2 DE69407925 T2 DE 69407925T2 DE 69407925 T DE69407925 T DE 69407925T DE 69407925 T DE69407925 T DE 69407925T DE 69407925 T2 DE69407925 T2 DE 69407925T2
Authority
DE
Germany
Prior art keywords
gallium indium
containing gallium
conductor containing
indium oxides
clear conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69407925T
Other languages
English (en)
Other versions
DE69407925D1 (de
Inventor
Robert Joseph Cava
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
AT&T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AT&T Corp filed Critical AT&T Corp
Application granted granted Critical
Publication of DE69407925D1 publication Critical patent/DE69407925D1/de
Publication of DE69407925T2 publication Critical patent/DE69407925T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
    • H01B1/08—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Non-Insulated Conductors (AREA)
  • Conductive Materials (AREA)
  • Physical Vapour Deposition (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Manufacturing Of Electric Cables (AREA)
DE69407925T 1993-10-27 1994-10-19 Durchsichtige Leiter enthaltend Gallium-Indium-Oxide Expired - Lifetime DE69407925T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/143,811 US5407602A (en) 1993-10-27 1993-10-27 Transparent conductors comprising gallium-indium-oxide

Publications (2)

Publication Number Publication Date
DE69407925D1 DE69407925D1 (de) 1998-02-19
DE69407925T2 true DE69407925T2 (de) 1998-04-30

Family

ID=22505756

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69407925T Expired - Lifetime DE69407925T2 (de) 1993-10-27 1994-10-19 Durchsichtige Leiter enthaltend Gallium-Indium-Oxide

Country Status (6)

Country Link
US (1) US5407602A (de)
EP (1) EP0651399B1 (de)
JP (1) JP3358893B2 (de)
KR (1) KR100328154B1 (de)
CA (1) CA2130539C (de)
DE (1) DE69407925T2 (de)

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JP3925977B2 (ja) * 1997-02-21 2007-06-06 旭硝子セラミックス株式会社 透明導電膜とその製造方法およびスパッタリングターゲット
DE29711973U1 (de) * 1997-07-08 1998-11-05 Firma Glas-Platz, 51580 Reichshof Elektrische Vorrichtung, elektrisches Gerät bzw. Beleuchtungsvorrichtung
US6480633B1 (en) * 1999-06-17 2002-11-12 Agere Systems Inc. Electro-optic device including a buffer layer of transparent conductive material
JP2001307553A (ja) * 2000-04-24 2001-11-02 Geomatec Co Ltd 透明導電膜およびその製造方法並びにその用途
KR100776505B1 (ko) * 2000-12-30 2007-11-16 엘지.필립스 엘시디 주식회사 액정표시장치의 화소전극 제조 방법
US6645843B2 (en) 2001-01-19 2003-11-11 The United States Of America As Represented By The Secretary Of The Navy Pulsed laser deposition of transparent conducting thin films on flexible substrates
EP2278041B1 (de) * 2001-08-02 2012-05-23 Idemitsu Kosan Co., Ltd. Sputtertarget und durch das Target erhältlicher, transparenter, leitfähiger Film
CN1558962A (zh) * 2001-09-27 2004-12-29 出光兴产株式会社 溅射靶材和透明导电薄膜
JP4006994B2 (ja) * 2001-12-18 2007-11-14 株式会社リコー 立体構造体の加工方法、立体形状品の製造方法及び立体構造体
EP1720175B1 (de) * 2004-02-27 2010-05-12 Sumitomo Metal Mining Co., Ltd. Transparenter leitfähiger film und transparentes leitfähiges basismaterial damit
US7297977B2 (en) * 2004-03-12 2007-11-20 Hewlett-Packard Development Company, L.P. Semiconductor device
US8314420B2 (en) * 2004-03-12 2012-11-20 Hewlett-Packard Development Company, L.P. Semiconductor device with multiple component oxide channel
US7427776B2 (en) * 2004-10-07 2008-09-23 Hewlett-Packard Development Company, L.P. Thin-film transistor and methods
JP4687374B2 (ja) * 2005-10-18 2011-05-25 住友金属鉱山株式会社 透明導電膜及びそれを含む透明導電性基材
JP4816116B2 (ja) * 2006-02-08 2011-11-16 住友金属鉱山株式会社 スパッタリングターゲット用酸化物焼結体および、それを用いて得られる酸化物膜、それを含む透明基材
JP4816137B2 (ja) * 2006-02-24 2011-11-16 住友金属鉱山株式会社 透明導電膜及び透明導電性基材
KR100813854B1 (ko) * 2007-04-23 2008-03-17 삼성에스디아이 주식회사 유기 발광 소자 및 그 제조방법
EP2168933B1 (de) * 2007-07-06 2017-09-06 Sumitomo Metal Mining Co., Ltd. Oxidsinterkörper, verfahren zu seiner herstellung, target sowie verwendung
CN101960625B (zh) 2008-03-06 2013-01-23 住友金属矿山株式会社 半导体发光元件、该半导体发光元件的制造方法以及使用该半导体发光元件的灯
JP5348132B2 (ja) * 2008-04-16 2013-11-20 住友金属鉱山株式会社 薄膜トランジスタ型基板、薄膜トランジスタ型液晶表示装置および薄膜トランジスタ型基板の製造方法
CN102159517B (zh) 2008-09-19 2014-08-06 出光兴产株式会社 氧化物烧结体及溅射靶材
JP2011174134A (ja) * 2010-02-24 2011-09-08 Idemitsu Kosan Co Ltd Ｉｎ−Ｇａ−Ｓｎ系酸化物焼結体、ターゲット、酸化物半導体膜、及び半導体素子
US9045821B2 (en) * 2010-03-02 2015-06-02 Sumitomo Metal Mining Co., Ltd. Laminate, method for producing same, and functional element using same
WO2013027391A1 (ja) * 2011-08-22 2013-02-28 出光興産株式会社 Ｉｎ－Ｇａ－Ｓｎ系酸化物焼結体
US9391226B2 (en) * 2011-11-10 2016-07-12 Lei Guo Semiconductor DC transformer
JP5925535B2 (ja) * 2012-03-12 2016-05-25 三井金属鉱業株式会社 ガリウム・インジウム複合酸化物粉末
US9224820B2 (en) * 2012-05-31 2015-12-29 Samsung Corning Advanced Glass, Llc Oxide semiconductor sputtering target, method of manufacturing thin-film transistors using the same, and thin film transistor manufactured using the same
CN108962724A (zh) 2013-07-16 2018-12-07 住友金属矿山株式会社 氧化物半导体薄膜和薄膜晶体管
WO2015178430A1 (ja) * 2014-05-23 2015-11-26 住友金属鉱山株式会社 酸化物焼結体、スパッタリング用ターゲット、及びそれを用いて得られる酸化物半導体薄膜
JP6141381B2 (ja) * 2015-10-14 2017-06-07 出光興産株式会社 スパッタリングターゲットの製造方法
JP6581057B2 (ja) 2016-09-14 2019-09-25 株式会社東芝 半導体装置、半導体記憶装置及び固体撮像装置
JP6830089B2 (ja) * 2018-12-26 2021-02-17 Ｊｘ金属株式会社 スパッタリングターゲット部材、スパッタリングターゲット部材の製造方法、スパッタリングターゲット、スパッタ膜の製造方法、膜体の製造方法、積層構造体の製造方法、及び有機ｅｌ装置の製造方法
JP6722785B1 (ja) * 2019-01-29 2020-07-15 Ｊｘ金属株式会社 スパッタリングターゲット部材、スパッタリングターゲット、スパッタ膜の製造方法、膜体の製造方法、積層構造体、積層構造体の製造方法、有機ｅｌ装置、及び有機ｅｌ装置の製造方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3814996A (en) * 1972-06-27 1974-06-04 Us Air Force Photocathodes
US3895131A (en) * 1974-02-21 1975-07-15 Xerox Corp Electroless coating method
JPS5156998A (ja) * 1974-11-13 1976-05-19 Hitachi Ltd Shitsudokenchizairyo
JPS6065760A (ja) * 1983-09-21 1985-04-15 東ソー株式会社 高電気伝導性酸化錫薄膜材料の製造法

Also Published As

Publication number Publication date
KR950011332A (ko) 1995-05-15
EP0651399B1 (de) 1998-01-14
US5407602A (en) 1995-04-18
CA2130539A1 (en) 1995-04-28
DE69407925D1 (de) 1998-02-19
CA2130539C (en) 1998-08-25
JPH07182924A (ja) 1995-07-21
KR100328154B1 (ko) 2002-06-22
EP0651399A1 (de) 1995-05-03
JP3358893B2 (ja) 2002-12-24

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