DE69404870D1 - Bildsensor - Google Patents
BildsensorInfo
- Publication number
- DE69404870D1 DE69404870D1 DE69404870T DE69404870T DE69404870D1 DE 69404870 D1 DE69404870 D1 DE 69404870D1 DE 69404870 T DE69404870 T DE 69404870T DE 69404870 T DE69404870 T DE 69404870T DE 69404870 D1 DE69404870 D1 DE 69404870D1
- Authority
- DE
- Germany
- Prior art keywords
- image sensor
- sensor
- image
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14623—Optical shielding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB939301405A GB9301405D0 (en) | 1993-01-25 | 1993-01-25 | An image sensor |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69404870D1 true DE69404870D1 (de) | 1997-09-18 |
DE69404870T2 DE69404870T2 (de) | 1998-03-05 |
Family
ID=10729266
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69404870T Expired - Fee Related DE69404870T2 (de) | 1993-01-25 | 1994-01-18 | Bildsensor |
Country Status (5)
Country | Link |
---|---|
US (1) | US5463216A (de) |
EP (1) | EP0608932B1 (de) |
JP (1) | JPH06244391A (de) |
DE (1) | DE69404870T2 (de) |
GB (1) | GB9301405D0 (de) |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5786827A (en) * | 1995-02-21 | 1998-07-28 | Lucent Technologies Inc. | Semiconductor optical storage device and uses thereof |
GB9524483D0 (en) * | 1995-11-30 | 1996-01-31 | Philips Electronics Nv | Light sensing array device and apparatus incorporating such |
DE19545484C2 (de) * | 1995-12-06 | 2002-06-20 | Deutsche Telekom Ag | Bildaufnahmeeinrichtung |
US6795120B2 (en) | 1996-05-17 | 2004-09-21 | Sony Corporation | Solid-state imaging apparatus and camera using the same |
US5751492A (en) * | 1996-06-14 | 1998-05-12 | Eastman Kodak Company | Diffractive/Refractive lenslet array incorporating a second aspheric surface |
US5767523A (en) * | 1997-04-09 | 1998-06-16 | Svg Lithography Systems, Inc. | Multiple detector alignment system for photolithography |
TW465104B (en) * | 1997-12-25 | 2001-11-21 | Canon Kk | Contact type image sensor and information processing apparatus |
JP3649907B2 (ja) * | 1998-01-20 | 2005-05-18 | シャープ株式会社 | 二次元画像検出器およびその製造方法 |
JP3343071B2 (ja) * | 1998-03-03 | 2002-11-11 | 富士写真フイルム株式会社 | 撮像素子の実装方法 |
EP0953837A1 (de) * | 1998-05-01 | 1999-11-03 | F. Hoffmann-La Roche Ag | Fluoreszenzlichtmessgerät und dieses verwendende Vorrichtung |
JP3469143B2 (ja) | 1999-11-02 | 2003-11-25 | シャープ株式会社 | アクティブマトリクス基板及びそれを備えた二次元画像検出器 |
US6821810B1 (en) * | 2000-08-07 | 2004-11-23 | Taiwan Semiconductor Manufacturing Company | High transmittance overcoat for optimization of long focal length microlens arrays in semiconductor color imagers |
US6750437B2 (en) * | 2000-08-28 | 2004-06-15 | Canon Kabushiki Kaisha | Image pickup apparatus that suitably adjusts a focus |
US6714017B2 (en) * | 2000-11-30 | 2004-03-30 | Candescent Technologies Corporation | Method and system for infrared detection of electrical short defects |
US7196728B2 (en) * | 2002-03-27 | 2007-03-27 | Ericsson, Inc. | Method and apparatus for displaying images in combination with taking images |
JP4886162B2 (ja) * | 2003-06-18 | 2012-02-29 | キヤノン株式会社 | 撮像装置付き表示装置 |
EP1494477A1 (de) * | 2003-07-01 | 2005-01-05 | Thomson Licensing S.A. | Videotelefon mit einer kombinierten Bildwiedergabe- und -aufnahmeeinrichtung |
FR2860644B1 (fr) * | 2003-10-06 | 2006-03-03 | St Microelectronics Sa | Composant, plaque et boitier semi-conducteur a capteur optique |
US7372497B2 (en) * | 2004-04-28 | 2008-05-13 | Taiwan Semiconductor Manufacturing Company | Effective method to improve sub-micron color filter sensitivity |
TWI260093B (en) * | 2005-01-25 | 2006-08-11 | Au Optronics Corp | Thin film transistor with microlens structure, forming method thereof and TFT display panel comprising thereof |
US7576361B2 (en) | 2005-08-03 | 2009-08-18 | Aptina Imaging Corporation | Backside silicon wafer design reducing image artifacts from infrared radiation |
US20070152139A1 (en) * | 2005-12-30 | 2007-07-05 | Moores Mark D | Techniques to control illumination for image sensors |
US20070205354A1 (en) * | 2006-03-06 | 2007-09-06 | Micron Technology, Inc. | Image sensor light shield |
KR100809277B1 (ko) * | 2006-07-05 | 2008-03-03 | 삼성전기주식회사 | 어레이 렌즈를 갖는 카메라 모듈 |
JP5404732B2 (ja) | 2011-02-09 | 2014-02-05 | キヤノン株式会社 | 光電変換素子およびこれを用いた光電変換装置、撮像システム |
US8948338B2 (en) * | 2011-11-03 | 2015-02-03 | Medtronic Navigation, Inc. | Dynamically scanned X-ray detector panel |
CN102891155B (zh) * | 2012-09-27 | 2015-08-19 | 豪威科技(上海)有限公司 | 用于制作镜头的晶圆级贴合方法 |
JP6247495B2 (ja) * | 2012-11-26 | 2017-12-13 | キヤノン株式会社 | 半導体装置、及びその製造方法 |
US9780133B2 (en) * | 2015-08-04 | 2017-10-03 | Creative Sensor Inc. | Wafer-level lens structure for contact image sensor module |
JP6703387B2 (ja) * | 2015-10-02 | 2020-06-03 | エルジー ディスプレイ カンパニー リミテッド | 薄膜光センサ、2次元アレイセンサ、および指紋センサ付きモバイル用ディスプレイ |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4078243A (en) * | 1975-12-12 | 1978-03-07 | International Business Machines Corporation | Phototransistor array having uniform current response and method of manufacture |
FR2469805A1 (fr) * | 1979-11-09 | 1981-05-22 | Thomson Csf | Matrice de detection d'un rayonnement electromagnetique et intensificateur d'images radiologiques comportant une telle matrice |
FR2487566A1 (fr) * | 1980-07-25 | 1982-01-29 | Thomson Csf | Matrice de detection d'un rayonnement electromagnetique et intensificateur d'images radiologiques comportant une telle matrice |
US4425501A (en) * | 1981-03-30 | 1984-01-10 | Honeywell Inc. | Light aperture for a lenslet-photodetector array |
JPS6038989A (ja) * | 1983-08-12 | 1985-02-28 | Nec Corp | 固体撮像装置の製造方法 |
FR2554999B1 (fr) * | 1983-11-15 | 1986-01-17 | Thomson Csf | Dispositif photosensible pour l'infrarouge |
JPS60191548A (ja) * | 1984-03-12 | 1985-09-30 | Hitachi Ltd | イメ−ジセンサ |
US4727407A (en) * | 1984-07-13 | 1988-02-23 | Fuji Xerox Co., Ltd. | Image sensor |
JPS61292961A (ja) * | 1985-06-21 | 1986-12-23 | Fuji Xerox Co Ltd | イメ−ジセンサ |
FR2593343B1 (fr) * | 1986-01-20 | 1988-03-25 | Thomson Csf | Matrice d'elements photosensibles et son procede de fabrication, procede de lecture associe, et application de cette matrice a la prise de vue d'images |
FR2593987B1 (fr) * | 1986-01-24 | 1989-08-04 | Thomson Csf | Dispositif photosensible a l'etat solide |
EP0293094B1 (de) * | 1987-05-26 | 1993-11-18 | Matsushita Electric Industrial Co., Ltd. | Strahlungsdetektor |
JPH07110055B2 (ja) * | 1987-09-02 | 1995-11-22 | シャープ株式会社 | 二次元密着型イメージセンサ |
FR2627924B1 (fr) * | 1988-02-26 | 1990-06-22 | Thomson Csf | Dispositif photosensible et detecteur d'images comportant un tel dispositif, notamment detecteur d'images a double energie |
FR2628562A1 (fr) * | 1988-03-11 | 1989-09-15 | Thomson Csf | Dispositif d'imagerie a structure matricielle |
FR2638042A1 (fr) * | 1988-10-14 | 1990-04-20 | Thomson Csf | Procede pour reduire la remanence d'un phototransistor, notamment de type nipin |
JPH02251902A (ja) * | 1989-03-27 | 1990-10-09 | Seiko Epson Corp | レンズアレイ及びレンズアレイを用いた液晶表示素子 |
KR960000223B1 (ko) * | 1990-11-16 | 1996-01-03 | 가부시키가이샤 도시바 | 고체촬상장치 및 그 제조방법 |
US5324930A (en) * | 1993-04-08 | 1994-06-28 | Eastman Kodak Company | Lens array for photodiode device with an aperture having a lens region and a non-lens region |
-
1993
- 1993-01-25 GB GB939301405A patent/GB9301405D0/en active Pending
-
1994
- 1994-01-18 EP EP94200109A patent/EP0608932B1/de not_active Expired - Lifetime
- 1994-01-18 DE DE69404870T patent/DE69404870T2/de not_active Expired - Fee Related
- 1994-01-21 US US08/185,429 patent/US5463216A/en not_active Expired - Fee Related
- 1994-01-24 JP JP6005826A patent/JPH06244391A/ja not_active Ceased
Also Published As
Publication number | Publication date |
---|---|
US5463216A (en) | 1995-10-31 |
EP0608932B1 (de) | 1997-08-13 |
GB9301405D0 (en) | 1993-03-17 |
DE69404870T2 (de) | 1998-03-05 |
EP0608932A3 (en) | 1994-09-21 |
JPH06244391A (ja) | 1994-09-02 |
EP0608932A2 (de) | 1994-08-03 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: KONINKLIJKE PHILIPS ELECTRONICS N.V., EINDHOVEN, N |
|
8320 | Willingness to grant licences declared (paragraph 23) | ||
8339 | Ceased/non-payment of the annual fee |