DE69124954T2 - Festkörper-Bildsensor - Google Patents

Festkörper-Bildsensor

Info

Publication number
DE69124954T2
DE69124954T2 DE69124954T DE69124954T DE69124954T2 DE 69124954 T2 DE69124954 T2 DE 69124954T2 DE 69124954 T DE69124954 T DE 69124954T DE 69124954 T DE69124954 T DE 69124954T DE 69124954 T2 DE69124954 T2 DE 69124954T2
Authority
DE
Germany
Prior art keywords
image sensor
solid state
state image
solid
sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69124954T
Other languages
English (en)
Other versions
DE69124954D1 (de
Inventor
Tetsuo Yamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE69124954D1 publication Critical patent/DE69124954D1/de
Application granted granted Critical
Publication of DE69124954T2 publication Critical patent/DE69124954T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14831—Area CCD imagers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/713—Transfer or readout registers; Split readout registers or multiple readout registers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H04N25/44—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by partially reading an SSIS array
    • H04N25/441—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by partially reading an SSIS array by reading contiguous pixels from selected rows or columns of the array, e.g. interlaced scanning
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/73—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors using interline transfer [IT]
DE69124954T 1990-11-30 1991-12-02 Festkörper-Bildsensor Expired - Fee Related DE69124954T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2336067A JP2760656B2 (ja) 1990-11-30 1990-11-30 固体撮像装置

Publications (2)

Publication Number Publication Date
DE69124954D1 DE69124954D1 (de) 1997-04-10
DE69124954T2 true DE69124954T2 (de) 1997-07-10

Family

ID=18295354

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69124954T Expired - Fee Related DE69124954T2 (de) 1990-11-30 1991-12-02 Festkörper-Bildsensor

Country Status (5)

Country Link
US (1) US5400071A (de)
EP (1) EP0492182B1 (de)
JP (1) JP2760656B2 (de)
KR (1) KR950014884B1 (de)
DE (1) DE69124954T2 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69512863T2 (de) * 1994-11-11 2000-04-20 Sanyo Electric Co Festkörper-Bildaufnahmevorrichtung und Ansteuerverfahren dafür
US6157408A (en) * 1995-06-06 2000-12-05 Takeharu Etoh High-speed CCD image transfer apparatus
US5693946A (en) * 1996-06-11 1997-12-02 Trustees Of Boston University Single photon imaging with a Bi-Linear charge-coupled device array
KR100226787B1 (en) * 1996-12-16 1999-10-15 Hyundai Micro Electronics Co Ccd device
JP2003234960A (ja) * 2002-02-06 2003-08-22 Sanyo Electric Co Ltd 撮像装置
JP4837239B2 (ja) * 2003-01-20 2011-12-14 ソニー株式会社 固体撮像素子
US7602431B2 (en) * 2005-09-28 2009-10-13 Sony Corporation Solid-state imaging element and solid-state imaging apparatus
US8610044B2 (en) 2010-12-17 2013-12-17 Truesence Imaging, Inc. Method for producing a linear image sensor having multiple outputs
US20120081591A1 (en) * 2010-09-30 2012-04-05 Nelson Edward T Linear image sensor with multiple outputs
EP2519000A1 (de) 2011-04-29 2012-10-31 Truesense Imaging, Inc. CCD-Bildsensoren und Verfahren

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5969965A (ja) * 1982-10-15 1984-04-20 Canon Inc フレ−ム・トランスフア−型撮像素子
JPS59122085A (ja) * 1982-12-27 1984-07-14 Sony Corp 固体撮像素子
JPS59154882A (ja) * 1983-02-24 1984-09-03 Toshiba Corp 固体撮像装置
JPH0644823B2 (ja) * 1986-08-22 1994-06-08 日本ビクター株式会社 固体撮像装置
JPS6386974A (ja) * 1986-09-30 1988-04-18 Nec Corp 電荷転送撮像素子とその駆動方法
KR920003654B1 (ko) * 1987-04-10 1992-05-06 가부시끼가이샤 도시바 고속셔터 기능이 있는 고체 촬상소자
JPS63278365A (ja) * 1987-05-11 1988-11-16 Nec Home Electronics Ltd 画像入力装置
US4878121A (en) * 1987-07-09 1989-10-31 Texas Instruments Incorporated Image sensor array for still camera imaging with multiplexer for separating interlaced fields
US4897728A (en) * 1987-10-09 1990-01-30 Kabushiki Kaisha Toshiba Charge transfer device for solid state image pickup apparatus and method of driving the same
JPH01106676A (ja) * 1987-10-20 1989-04-24 Mitsubishi Electric Corp 固体イメージセンサ
US5043819A (en) * 1989-12-05 1991-08-27 Samsung Electronics Co., Ltd. CCD solid state image sensor with two horizontal transfer CCDs corresponding to both odd and even columns of elements
JP2760639B2 (ja) * 1990-07-04 1998-06-04 株式会社東芝 固体撮像装置およびその駆動方法

Also Published As

Publication number Publication date
KR920011279A (ko) 1992-06-27
JPH04207591A (ja) 1992-07-29
EP0492182A2 (de) 1992-07-01
JP2760656B2 (ja) 1998-06-04
EP0492182B1 (de) 1997-03-05
DE69124954D1 (de) 1997-04-10
KR950014884B1 (ko) 1995-12-16
US5400071A (en) 1995-03-21
EP0492182A3 (en) 1993-10-06

Similar Documents

Publication Publication Date Title
DE69131076D1 (de) Bildsensor
DE69316261T2 (de) Bildsensor
DE69219543D1 (de) Bildsensor
DE59010549D1 (de) Elektrochemisch-enzymatischer Sensor
DE59309120D1 (de) Bilderfassende Sensoreinheit
DE68917242T2 (de) Festkörperbildsensor.
DE69121303T2 (de) Bildsensor
DE69404870T2 (de) Bildsensor
DE69209374T2 (de) Festkörper-Bildsensor
DE69110797T2 (de) Bildsensor.
DE69315895D1 (de) Bildsensor
DE69118818T2 (de) Festkörper-Bildaufnahmeelement
SG63628A1 (en) Solid state image sensor
DE69025173D1 (de) Festkörper-bildsensor
DE69124954T2 (de) Festkörper-Bildsensor
DE69231261D1 (de) Festkörperbildsensor
DE69330617T2 (de) Festkörper-Bildsensor
DE58908801D1 (de) Bildsensor.
DE69230232D1 (de) Festkörperbildsensor
DE69119364T2 (de) Festkörperbildsensor
DE69224408D1 (de) Ladungsgekoppelter Bildsensor
DE69023952T2 (de) Festkörper-Bildsensor.
DE69009882T2 (de) Festkörperbildsensor.
DE69130915T2 (de) Festkörper-Bildsensorsteuerung
KR900011035A (ko) Ccd형 이미지 센서

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee