DE69333226D1 - Elektronischer schaltkreis im nanobereich und verfahren zu dessen herstellung - Google Patents

Elektronischer schaltkreis im nanobereich und verfahren zu dessen herstellung

Info

Publication number
DE69333226D1
DE69333226D1 DE69333226T DE69333226T DE69333226D1 DE 69333226 D1 DE69333226 D1 DE 69333226D1 DE 69333226 T DE69333226 T DE 69333226T DE 69333226 T DE69333226 T DE 69333226T DE 69333226 D1 DE69333226 D1 DE 69333226D1
Authority
DE
Germany
Prior art keywords
production
electronic circuit
nano area
nano
area
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69333226T
Other languages
English (en)
Other versions
DE69333226T2 (de
Inventor
A Reed
M Tour
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Yale University
University of South Carolina
Original Assignee
Yale University
University of South Carolina
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US07/893,092 external-priority patent/US5475341A/en
Application filed by Yale University, University of South Carolina filed Critical Yale University
Application granted granted Critical
Publication of DE69333226D1 publication Critical patent/DE69333226D1/de
Publication of DE69333226T2 publication Critical patent/DE69333226T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/7606—Transistor-like structures, e.g. hot electron transistor [HET]; metal base transistor [MBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/88—Tunnel-effect diodes
    • H01L29/882—Resonant tunneling diodes, i.e. RTD, RTBD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/701—Organic molecular electronic devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/40—Organosilicon compounds, e.g. TIPS pentacene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/655—Aromatic compounds comprising a hetero atom comprising only sulfur as heteroatom
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Materials Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Computer Hardware Design (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Composite Materials (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE69333226T 1992-06-01 1993-06-01 Elektronischer schaltkreis im nanobereich und verfahren zu dessen herstellung Expired - Fee Related DE69333226T2 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US89160592A 1992-06-01 1992-06-01
US893092 1992-06-01
US891605 1992-06-01
US07/893,092 US5475341A (en) 1992-06-01 1992-06-01 Sub-nanoscale electronic systems and devices
PCT/US1993/005185 WO1993025003A1 (en) 1992-06-01 1993-06-01 Sub-nanoscale electronic systems, devices and processes

Publications (2)

Publication Number Publication Date
DE69333226D1 true DE69333226D1 (de) 2003-11-06
DE69333226T2 DE69333226T2 (de) 2004-07-22

Family

ID=27128986

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69333226T Expired - Fee Related DE69333226T2 (de) 1992-06-01 1993-06-01 Elektronischer schaltkreis im nanobereich und verfahren zu dessen herstellung

Country Status (7)

Country Link
EP (1) EP0643883B1 (de)
JP (1) JP3637056B2 (de)
AT (1) ATE251361T1 (de)
AU (1) AU4400093A (de)
CA (1) CA2134755A1 (de)
DE (1) DE69333226T2 (de)
WO (1) WO1993025003A1 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IL121312A (en) * 1997-07-14 2001-09-13 Technion Res & Dev Foundation Microelectronic components, their manufacture and electronic networks containing them
GB9808061D0 (en) * 1998-04-16 1998-06-17 Cambridge Display Tech Ltd Polymer devices
US6348700B1 (en) 1998-10-27 2002-02-19 The Mitre Corporation Monomolecular rectifying wire and logic based thereupon
IL126776A (en) 1998-10-27 2001-04-30 Technion Res & Dev Foundation A method of investing gold
US7364920B2 (en) 1999-10-27 2008-04-29 Technion Research And Development Foundation Ltd. Method for gold deposition
KR20040035592A (ko) * 2001-03-02 2004-04-29 윌리엄 마쉬 라이스 유니버시티 분자 디바이스의 전기 전위-보조된 어셈블리
DE10155054C2 (de) * 2001-11-09 2003-10-23 Friz Biochem Gmbh Molekulares elektronisches Bauelement zum Aufbau nanoelektronischer Schaltungen, molekulare elektronische Baugruppe, elektronische Schaltung und Herstellungsverfahren
EP1496012A4 (de) 2002-03-08 2008-06-18 Nat Inst Inf & Comm Tech Vorrichtung und verfahren zur herstellung eines leitenden nanodrahtes
US6670631B2 (en) * 2002-05-20 2003-12-30 Hewlett-Packard Development Company, L.P. Low-forward-voltage molecular rectifier
DE10330825A1 (de) 2003-07-08 2005-06-23 Infineon Technologies Ag Integrierter Schaltkreis
JP4497511B2 (ja) * 2003-07-17 2010-07-07 独立行政法人科学技術振興機構 有機半導体ドット作製材料、有機半導体ドット構造体および有機半導体ドットの作製方法
DE10340610B4 (de) * 2003-08-29 2007-06-06 Infineon Technologies Ag Verbindung mit mindestens einer Speichereinheit aus organischem Speichermaterial, insbesondere zur Verwendung in CMOS-Strukturen, Halbleiterbauelement und ein Verfahren zur Herstellung eines Halbleiterbauelementes
CN111884644B (zh) * 2020-06-28 2024-04-19 深圳清华大学研究院 一种基于结构超滑的并联rf mems开关

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0075454B1 (de) * 1981-09-18 1987-11-25 Fujitsu Limited Halbleiteranordnung mit leitender Verbindungsstruktur und Verfahren zum Herstellen derselben
US4427840A (en) * 1981-12-30 1984-01-24 The United States Of America As Represented By The United States Department Of Energy Plastic Schottky barrier solar cells
US4804930A (en) * 1983-09-26 1989-02-14 H.S.G. Venture Molecular electro-optical transistor and switch
US5107308A (en) * 1986-07-04 1992-04-21 Mitsubishi Denki Kabushiki Kaisha Field-effect transistor
JPS6444061A (en) * 1987-08-12 1989-02-16 Seiko Epson Corp Method of fixing molecular chain
JPS6444062A (en) * 1987-08-12 1989-02-16 Seiko Epson Corp Disposing and wiring method for molecular chain
JPH0318068A (ja) * 1989-06-15 1991-01-25 Bridgestone Corp 光電変換素子

Also Published As

Publication number Publication date
EP0643883A1 (de) 1995-03-22
AU4400093A (en) 1993-12-30
ATE251361T1 (de) 2003-10-15
DE69333226T2 (de) 2004-07-22
JPH08501411A (ja) 1996-02-13
EP0643883B1 (de) 2003-10-01
WO1993025003A1 (en) 1993-12-09
EP0643883A4 (de) 1997-08-20
JP3637056B2 (ja) 2005-04-06
CA2134755A1 (en) 1993-12-09

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee