ATE251361T1 - Elektronischer schaltkreis im nanobereich und verfahren zu dessen herstellung - Google Patents

Elektronischer schaltkreis im nanobereich und verfahren zu dessen herstellung

Info

Publication number
ATE251361T1
ATE251361T1 AT93914286T AT93914286T ATE251361T1 AT E251361 T1 ATE251361 T1 AT E251361T1 AT 93914286 T AT93914286 T AT 93914286T AT 93914286 T AT93914286 T AT 93914286T AT E251361 T1 ATE251361 T1 AT E251361T1
Authority
AT
Austria
Prior art keywords
production
electronic circuit
nano scale
devices
nano
Prior art date
Application number
AT93914286T
Other languages
English (en)
Inventor
Mark A Reed
James M Tour
Original Assignee
Univ Yale
Univ South Carolina
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US07/893,092 external-priority patent/US5475341A/en
Application filed by Univ Yale, Univ South Carolina filed Critical Univ Yale
Application granted granted Critical
Publication of ATE251361T1 publication Critical patent/ATE251361T1/de

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/7606—Transistor-like structures, e.g. hot electron transistor [HET]; metal base transistor [MBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/88—Tunnel-effect diodes
    • H01L29/882—Resonant tunneling diodes, i.e. RTD, RTBD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/701—Organic molecular electronic devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/40—Organosilicon compounds, e.g. TIPS pentacene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/655—Aromatic compounds comprising a hetero atom comprising only sulfur as heteroatom
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
AT93914286T 1992-06-01 1993-06-01 Elektronischer schaltkreis im nanobereich und verfahren zu dessen herstellung ATE251361T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US89160592A 1992-06-01 1992-06-01
US07/893,092 US5475341A (en) 1992-06-01 1992-06-01 Sub-nanoscale electronic systems and devices
PCT/US1993/005185 WO1993025003A1 (en) 1992-06-01 1993-06-01 Sub-nanoscale electronic systems, devices and processes

Publications (1)

Publication Number Publication Date
ATE251361T1 true ATE251361T1 (de) 2003-10-15

Family

ID=27128986

Family Applications (1)

Application Number Title Priority Date Filing Date
AT93914286T ATE251361T1 (de) 1992-06-01 1993-06-01 Elektronischer schaltkreis im nanobereich und verfahren zu dessen herstellung

Country Status (7)

Country Link
EP (1) EP0643883B1 (de)
JP (1) JP3637056B2 (de)
AT (1) ATE251361T1 (de)
AU (1) AU4400093A (de)
CA (1) CA2134755A1 (de)
DE (1) DE69333226T2 (de)
WO (1) WO1993025003A1 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IL121312A (en) * 1997-07-14 2001-09-13 Technion Res & Dev Foundation Microelectronic components, their manufacture and electronic networks containing them
GB9808061D0 (en) * 1998-04-16 1998-06-17 Cambridge Display Tech Ltd Polymer devices
IL126776A (en) 1998-10-27 2001-04-30 Technion Res & Dev Foundation A method of investing gold
US6348700B1 (en) 1998-10-27 2002-02-19 The Mitre Corporation Monomolecular rectifying wire and logic based thereupon
US7364920B2 (en) 1999-10-27 2008-04-29 Technion Research And Development Foundation Ltd. Method for gold deposition
GB2390373B (en) * 2001-03-02 2005-11-16 Univ Rice William M Electrical potential-assisted assembly of molecular devices
DE20121631U1 (de) * 2001-11-09 2003-06-18 Friz Biochem Gmbh Molekulares elektronisches Bauelement zum Aufbau nanoelektronischer Schaltungen, molekulare elektronische Baugruppe und elektronische Schaltung
EP1496012A4 (de) 2002-03-08 2008-06-18 Nat Inst Inf & Comm Tech Vorrichtung und verfahren zur herstellung eines leitenden nanodrahtes
US6670631B2 (en) 2002-05-20 2003-12-30 Hewlett-Packard Development Company, L.P. Low-forward-voltage molecular rectifier
DE10330825A1 (de) 2003-07-08 2005-06-23 Infineon Technologies Ag Integrierter Schaltkreis
JP4497511B2 (ja) * 2003-07-17 2010-07-07 独立行政法人科学技術振興機構 有機半導体ドット作製材料、有機半導体ドット構造体および有機半導体ドットの作製方法
DE10340610B4 (de) * 2003-08-29 2007-06-06 Infineon Technologies Ag Verbindung mit mindestens einer Speichereinheit aus organischem Speichermaterial, insbesondere zur Verwendung in CMOS-Strukturen, Halbleiterbauelement und ein Verfahren zur Herstellung eines Halbleiterbauelementes
CN111884644B (zh) * 2020-06-28 2024-04-19 深圳清华大学研究院 一种基于结构超滑的并联rf mems开关

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0075454B1 (de) * 1981-09-18 1987-11-25 Fujitsu Limited Halbleiteranordnung mit leitender Verbindungsstruktur und Verfahren zum Herstellen derselben
US4427840A (en) * 1981-12-30 1984-01-24 The United States Of America As Represented By The United States Department Of Energy Plastic Schottky barrier solar cells
US4804930A (en) * 1983-09-26 1989-02-14 H.S.G. Venture Molecular electro-optical transistor and switch
US5107308A (en) * 1986-07-04 1992-04-21 Mitsubishi Denki Kabushiki Kaisha Field-effect transistor
JPS6444061A (en) * 1987-08-12 1989-02-16 Seiko Epson Corp Method of fixing molecular chain
JPS6444062A (en) * 1987-08-12 1989-02-16 Seiko Epson Corp Disposing and wiring method for molecular chain
JPH0318068A (ja) * 1989-06-15 1991-01-25 Bridgestone Corp 光電変換素子

Also Published As

Publication number Publication date
JP3637056B2 (ja) 2005-04-06
EP0643883A4 (de) 1997-08-20
DE69333226D1 (de) 2003-11-06
CA2134755A1 (en) 1993-12-09
JPH08501411A (ja) 1996-02-13
WO1993025003A1 (en) 1993-12-09
AU4400093A (en) 1993-12-30
EP0643883A1 (de) 1995-03-22
EP0643883B1 (de) 2003-10-01
DE69333226T2 (de) 2004-07-22

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