DE69331661T2 - System zur Characterisierung der Wechselstromeigenschaften einer Plasmabearbeitung - Google Patents

System zur Characterisierung der Wechselstromeigenschaften einer Plasmabearbeitung

Info

Publication number
DE69331661T2
DE69331661T2 DE69331661T DE69331661T DE69331661T2 DE 69331661 T2 DE69331661 T2 DE 69331661T2 DE 69331661 T DE69331661 T DE 69331661T DE 69331661 T DE69331661 T DE 69331661T DE 69331661 T2 DE69331661 T2 DE 69331661T2
Authority
DE
Germany
Prior art keywords
characterizing
properties
plasma processing
plasma
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69331661T
Other languages
English (en)
Other versions
DE69331661D1 (de
Inventor
L Heckman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Energy Industries Inc
Original Assignee
Advanced Energy Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Energy Industries Inc filed Critical Advanced Energy Industries Inc
Application granted granted Critical
Publication of DE69331661D1 publication Critical patent/DE69331661D1/de
Publication of DE69331661T2 publication Critical patent/DE69331661T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32963—End-point detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/0006—Investigating plasma, e.g. measuring the degree of ionisation or the electron temperature
    • H05H1/0081—Investigating plasma, e.g. measuring the degree of ionisation or the electron temperature by electric means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
DE69331661T 1992-03-19 1993-03-18 System zur Characterisierung der Wechselstromeigenschaften einer Plasmabearbeitung Expired - Fee Related DE69331661T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/854,804 US5523955A (en) 1992-03-19 1992-03-19 System for characterizing AC properties of a processing plasma
PCT/US1993/002444 WO1993019571A1 (en) 1992-03-19 1993-03-18 System for characterizing ac properties of a processing plasma

Publications (2)

Publication Number Publication Date
DE69331661D1 DE69331661D1 (de) 2002-04-11
DE69331661T2 true DE69331661T2 (de) 2002-08-01

Family

ID=25319552

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69331661T Expired - Fee Related DE69331661T2 (de) 1992-03-19 1993-03-18 System zur Characterisierung der Wechselstromeigenschaften einer Plasmabearbeitung

Country Status (5)

Country Link
US (1) US5523955A (de)
EP (1) EP0631711B1 (de)
JP (1) JP3299273B2 (de)
DE (1) DE69331661T2 (de)
WO (1) WO1993019571A1 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19927063B4 (de) * 1999-06-15 2005-03-10 Christof Luecking Verfahren zur Bestimmung der elektrischen Eigenschaften von hochfrequenzangeregten Gasentladungen durch Berechnung mit einer inversen Matrix, die durch einmalige Kalibrierung bestimmt wird

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EP1018088A4 (de) * 1997-09-17 2006-08-16 Tokyo Electron Ltd Vorrichtung und verfahren zur überwachung und regelung von gas plasma prozessen
US6449568B1 (en) * 1998-02-27 2002-09-10 Eni Technology, Inc. Voltage-current sensor with high matching directivity
US6034781A (en) * 1998-05-26 2000-03-07 Wisconsin Alumni Research Foundation Electro-optical plasma probe
US20030095993A1 (en) * 2000-01-28 2003-05-22 Hanne Bentz Gel-infused sponges for tissue repair and augmentation
US6657394B2 (en) * 2001-04-06 2003-12-02 Eni Technology, Inc. Reflection coefficient phase detector
JP4131793B2 (ja) * 2001-12-10 2008-08-13 東京エレクトロン株式会社 高周波電源及びその制御方法、並びにプラズマ処理装置
AU2002354459A1 (en) * 2001-12-10 2003-07-09 Tokyo Electron Limited High-frequency power source and its control method, and plasma processor
US6819052B2 (en) * 2002-05-31 2004-11-16 Nagano Japan Radio Co., Ltd. Coaxial type impedance matching device and impedance detecting method for plasma generation
US20040116080A1 (en) * 2002-06-24 2004-06-17 Jin-Shyong Chen Time resolved RF plasma impedance meter
AU2003247538A1 (en) * 2002-07-03 2004-01-23 Tokyo Electron Limited Method and apparatus for non-invasive measurement and analys of semiconductor plasma parameters
JP2005531931A (ja) * 2002-07-03 2005-10-20 東京エレクトロン株式会社 半導体プロセスパラメータの非侵入性の測定と解析のための方法と装置
US6707255B2 (en) * 2002-07-10 2004-03-16 Eni Technology, Inc. Multirate processing for metrology of plasma RF source
US6791274B1 (en) * 2003-07-15 2004-09-14 Advanced Energy Industries, Inc. RF power control device for RF plasma applications
US7049751B2 (en) * 2003-07-16 2006-05-23 Advanced Energy Industries, Inc Termination of secondary frequencies in RF power delivery
JP5116667B2 (ja) * 2005-06-10 2013-01-09 バード テクノロジーズ グループ インク． 半導体プラズマ発生システムにおける電力潮流を解析するシステムと方法
EP2097920B1 (de) * 2007-07-23 2017-08-09 TRUMPF Hüttinger GmbH + Co. KG Plasmaversorgungseinrichtung
US7822565B2 (en) * 2007-12-31 2010-10-26 Advanced Energy Industries, Inc. System, method, and apparatus for monitoring characteristics of RF power
US7970562B2 (en) * 2008-05-07 2011-06-28 Advanced Energy Industries, Inc. System, method, and apparatus for monitoring power
US9107284B2 (en) * 2013-03-13 2015-08-11 Lam Research Corporation Chamber matching using voltage control mode
US10816581B2 (en) * 2018-09-17 2020-10-27 Infineon Technologies Ag RF impedance measurement and tuning system
CN112074071B (zh) * 2020-10-05 2024-06-18 四川大学 一种多路微波源的大功率等离子体发生装置

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GB982700A (en) * 1962-08-28 1965-02-10 Marconi Co Ltd Improvements in or relating to apparatus for the detection of discharges in high-power transmission channels
US3614606A (en) * 1969-04-04 1971-10-19 John A Schmidt Capacitive-coupled probe for measuring potentials in a plasma
US4104583A (en) * 1977-08-31 1978-08-01 The United States Of America As Represented By The Secretary Of Commerce Six-port measuring circuit
US4489271A (en) * 1979-01-15 1984-12-18 Riblet Gordon P Reflection coefficient measurements
US4207137A (en) * 1979-04-13 1980-06-10 Bell Telephone Laboratories, Incorporated Method of controlling a plasma etching process by monitoring the impedance changes of the RF power
US4427936A (en) * 1981-06-22 1984-01-24 Microwave Development Labs Reflection coefficient measurements
US4521728A (en) * 1982-08-23 1985-06-04 Renato Bosisio Method and a six port network for use in determining complex reflection coefficients of microwave networks
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JPS60126832A (ja) * 1983-12-14 1985-07-06 Hitachi Ltd ドライエツチング方法および装置
US4579618A (en) * 1984-01-06 1986-04-01 Tegal Corporation Plasma reactor apparatus
US4629940A (en) * 1984-03-02 1986-12-16 The Perkin-Elmer Corporation Plasma emission source
GB8413339D0 (en) * 1984-05-24 1984-06-27 Secr Defence Six-port reflectometer
GB8516537D0 (en) * 1985-06-29 1985-07-31 Standard Telephones Cables Ltd Pulsed plasma apparatus
JPS63178027A (ja) * 1987-01-20 1988-07-22 Nippon G O R:Kk 板状成形品に取付金具を取付ける方法
US4847792A (en) * 1987-05-04 1989-07-11 Texas Instruments Incorporated Process and apparatus for detecting aberrations in production process operations
US4956582A (en) * 1988-04-19 1990-09-11 The Boeing Company Low temperature plasma generator with minimal RF emissions
FR2633399B1 (fr) * 1988-06-24 1990-08-31 Commissariat Energie Atomique Procede et dispositif de determination de l'impedance d'une decharge dans un reacteur a plasma associe a une boite d'accord et application a la regulation de l'impedance ou du flux ionique dans ce reacteur
US5014217A (en) * 1989-02-09 1991-05-07 S C Technology, Inc. Apparatus and method for automatically identifying chemical species within a plasma reactor environment
DE3923662A1 (de) * 1989-07-18 1991-01-24 Leybold Ag Schaltungsanordnung zum automatischen abstimmen eines anpassungsnetzwerks
US4954212A (en) * 1989-09-26 1990-09-04 Vlsi Technology, Inc. Endpoint detection system and method for plasma etching
US5175472A (en) * 1991-12-30 1992-12-29 Comdel, Inc. Power monitor of RF plasma

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19927063B4 (de) * 1999-06-15 2005-03-10 Christof Luecking Verfahren zur Bestimmung der elektrischen Eigenschaften von hochfrequenzangeregten Gasentladungen durch Berechnung mit einer inversen Matrix, die durch einmalige Kalibrierung bestimmt wird

Also Published As

Publication number Publication date
JP3299273B2 (ja) 2002-07-08
DE69331661D1 (de) 2002-04-11
JPH07505973A (ja) 1995-06-29
US5523955A (en) 1996-06-04
EP0631711B1 (de) 2002-03-06
WO1993019571A1 (en) 1993-09-30
EP0631711A1 (de) 1995-01-04

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee