DE69331659D1 - Verfahren zur Abscheidung von Polysiliziumschichten mit einer verbesserten Uniformität und dazugehörige Vorrichtung - Google Patents

Verfahren zur Abscheidung von Polysiliziumschichten mit einer verbesserten Uniformität und dazugehörige Vorrichtung

Info

Publication number
DE69331659D1
DE69331659D1 DE69331659T DE69331659T DE69331659D1 DE 69331659 D1 DE69331659 D1 DE 69331659D1 DE 69331659 T DE69331659 T DE 69331659T DE 69331659 T DE69331659 T DE 69331659T DE 69331659 D1 DE69331659 D1 DE 69331659D1
Authority
DE
Germany
Prior art keywords
deposition
associated device
polysilicon layers
improved uniformity
uniformity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69331659T
Other languages
English (en)
Other versions
DE69331659T2 (de
Inventor
Israel Beinglass
Mahalingam Venkatesan
Christian M Gronet
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Application granted granted Critical
Publication of DE69331659D1 publication Critical patent/DE69331659D1/de
Publication of DE69331659T2 publication Critical patent/DE69331659T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45591—Fixed means, e.g. wings, baffles
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE69331659T 1993-01-13 1993-12-21 Verfahren zur Abscheidung von Polysiliziumschichten mit einer verbesserten Uniformität und dazugehörige Vorrichtung Expired - Fee Related DE69331659T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US370793A 1993-01-13 1993-01-13

Publications (2)

Publication Number Publication Date
DE69331659D1 true DE69331659D1 (de) 2002-04-11
DE69331659T2 DE69331659T2 (de) 2002-09-12

Family

ID=21707187

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69331659T Expired - Fee Related DE69331659T2 (de) 1993-01-13 1993-12-21 Verfahren zur Abscheidung von Polysiliziumschichten mit einer verbesserten Uniformität und dazugehörige Vorrichtung

Country Status (5)

Country Link
US (2) US6402850B1 (de)
EP (1) EP0606751B1 (de)
JP (1) JP3581388B2 (de)
KR (1) KR100307256B1 (de)
DE (1) DE69331659T2 (de)

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US5304248A (en) * 1990-12-05 1994-04-19 Applied Materials, Inc. Passive shield for CVD wafer processing which provides frontside edge exclusion and prevents backside depositions
JP3566740B2 (ja) * 1992-09-30 2004-09-15 アプライド マテリアルズ インコーポレイテッド 全ウエハデポジション用装置
US5803977A (en) * 1992-09-30 1998-09-08 Applied Materials, Inc. Apparatus for full wafer deposition
US6022806A (en) * 1994-03-15 2000-02-08 Kabushiki Kaisha Toshiba Method of forming a film in recess by vapor phase growth
US5551982A (en) * 1994-03-31 1996-09-03 Applied Materials, Inc. Semiconductor wafer process chamber with susceptor back coating
JP3008782B2 (ja) * 1994-07-15 2000-02-14 信越半導体株式会社 気相成長方法およびその装置
US5861609A (en) * 1995-10-02 1999-01-19 Kaltenbrunner; Guenter Method and apparatus for rapid thermal processing
US6153260A (en) 1997-04-11 2000-11-28 Applied Materials, Inc. Method for heating exhaust gas in a substrate reactor
US6133152A (en) * 1997-05-16 2000-10-17 Applied Materials, Inc. Co-rotating edge ring extension for use in a semiconductor processing chamber
US5960158A (en) 1997-07-11 1999-09-28 Ag Associates Apparatus and method for filtering light in a thermal processing chamber
US6165273A (en) * 1997-10-21 2000-12-26 Fsi International Inc. Equipment for UV wafer heating and photochemistry
KR100660416B1 (ko) * 1997-11-03 2006-12-22 에이에스엠 아메리카, 인코포레이티드 개량된 저질량 웨이퍼 지지 시스템
DE69923436T2 (de) * 1998-03-06 2006-01-05 Asm America Inc., Phoenix Verfahren zum beschichten von silizium mit hoher kantenabdeckung
US5970214A (en) 1998-05-14 1999-10-19 Ag Associates Heating device for semiconductor wafers
US5930456A (en) 1998-05-14 1999-07-27 Ag Associates Heating device for semiconductor wafers
US6210484B1 (en) 1998-09-09 2001-04-03 Steag Rtp Systems, Inc. Heating device containing a multi-lamp cone for heating semiconductor wafers
US6771895B2 (en) 1999-01-06 2004-08-03 Mattson Technology, Inc. Heating device for heating semiconductor wafers in thermal processing chambers
US6281141B1 (en) 1999-02-08 2001-08-28 Steag Rtp Systems, Inc. Process for forming thin dielectric layers in semiconductor devices
US6159299A (en) * 1999-02-09 2000-12-12 Applied Materials, Inc. Wafer pedestal with a purge ring
TW200424343A (en) * 2002-09-05 2004-11-16 Asml Us Inc Low temperature deposition of silicon based thin films by single-wafer hot-wall rapid thermal chemical vapor deposition
TWI287253B (en) * 2002-09-30 2007-09-21 Adv Lcd Tech Dev Ct Co Ltd Substrate processing apparatus and substrate processing method
US6830996B2 (en) * 2003-03-24 2004-12-14 Taiwan Semiconductor Manufacturing Company, Ltd. Device performance improvement by heavily doped pre-gate and post polysilicon gate clean
US20080090309A1 (en) * 2003-10-27 2008-04-17 Ranish Joseph M Controlled annealing method
US8536492B2 (en) * 2003-10-27 2013-09-17 Applied Materials, Inc. Processing multilayer semiconductors with multiple heat sources
US6933157B2 (en) * 2003-11-13 2005-08-23 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor wafer manufacturing methods employing cleaning delay period
US7265036B2 (en) * 2004-07-23 2007-09-04 Applied Materials, Inc. Deposition of nano-crystal silicon using a single wafer chamber
US20060281310A1 (en) * 2005-06-08 2006-12-14 Applied Materials, Inc. Rotating substrate support and methods of use
US7837711B2 (en) * 2006-01-27 2010-11-23 Warsaw Orthopedic, Inc. Artificial spinous process for the sacrum and methods of use
US7799376B2 (en) * 2007-07-27 2010-09-21 Dalsa Semiconductor Inc. Method of controlling film stress in MEMS devices
WO2009117839A1 (en) * 2008-03-25 2009-10-01 Oc Oerlikon Balzers Ag Processing chamber
US20100075488A1 (en) * 2008-09-19 2010-03-25 Applied Materials, Inc. Cvd reactor with multiple processing levels and dual-axis motorized lift mechanism
US8801857B2 (en) 2008-10-31 2014-08-12 Asm America, Inc. Self-centering susceptor ring assembly
JP5440589B2 (ja) * 2010-11-16 2014-03-12 信越半導体株式会社 気相成長装置及びエピタキシャルウェーハの製造方法
TWI506171B (zh) * 2012-06-08 2015-11-01 Wintek Corp 形成多晶矽薄膜之方法
CN103489762A (zh) * 2012-06-08 2014-01-01 胜华科技股份有限公司 形成多晶硅薄膜的方法
EP2671965A3 (de) * 2012-06-08 2014-03-12 Wintek Corporation Verfahren zur Herstellung einer dünnschichtigen Polysiliziumschicht und Verfahren zur Bildung eines Dünnschichttransistors
KR101525210B1 (ko) * 2013-12-20 2015-06-05 주식회사 유진테크 기판 처리장치
US9837271B2 (en) 2014-07-18 2017-12-05 Asm Ip Holding B.V. Process for forming silicon-filled openings with a reduced occurrence of voids
US9443730B2 (en) 2014-07-18 2016-09-13 Asm Ip Holding B.V. Process for forming silicon-filled openings with a reduced occurrence of voids
CN108603290B (zh) * 2015-10-01 2021-09-10 环球晶圆股份有限公司 Cvd设备
US10446420B2 (en) * 2016-08-19 2019-10-15 Applied Materials, Inc. Upper cone for epitaxy chamber
JP6778553B2 (ja) * 2016-08-31 2020-11-04 株式会社日本製鋼所 原子層成長装置および原子層成長方法
US10460932B2 (en) 2017-03-31 2019-10-29 Asm Ip Holding B.V. Semiconductor device with amorphous silicon filled gaps and methods for forming
USD920936S1 (en) 2019-01-17 2021-06-01 Asm Ip Holding B.V. Higher temperature vented susceptor
TWI839443B (zh) 2019-01-17 2024-04-21 荷蘭商 Ａｓｍ Ｉｐ 私人控股有限公司 通風基座
USD914620S1 (en) 2019-01-17 2021-03-30 Asm Ip Holding B.V. Vented susceptor
TWI845682B (zh) 2019-05-22 2024-06-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 工件基座主體
US11764101B2 (en) 2019-10-24 2023-09-19 ASM IP Holding, B.V. Susceptor for semiconductor substrate processing
USD1031676S1 (en) 2020-12-04 2024-06-18 Asm Ip Holding B.V. Combined susceptor, support, and lift system

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JPS61194176A (ja) * 1985-02-25 1986-08-28 Hitachi Ltd 薄膜形成装置用基板ホルダ
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JP2641351B2 (ja) * 1990-08-23 1997-08-13 アプライド マテリアルズ インコーポレイテッド 可変分配率ガス流反応室
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KR100243784B1 (ko) * 1990-12-05 2000-02-01 조셉 제이. 스위니 웨이퍼의 전방부 모서리와후방부에서의 증착을 방지하는 cvd웨이퍼 처리용 수동 실드

Also Published As

Publication number Publication date
US5576059A (en) 1996-11-19
EP0606751B1 (de) 2002-03-06
US6402850B1 (en) 2002-06-11
KR940018918A (ko) 1994-08-19
JP3581388B2 (ja) 2004-10-27
KR100307256B1 (ko) 2001-11-30
DE69331659T2 (de) 2002-09-12
EP0606751A1 (de) 1994-07-20
JPH06293595A (ja) 1994-10-21

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee