DE69330870T2 - Planarisierungsverfahren von einer Halbleitervorrichtung - Google Patents
Planarisierungsverfahren von einer HalbleitervorrichtungInfo
- Publication number
- DE69330870T2 DE69330870T2 DE69330870T DE69330870T DE69330870T2 DE 69330870 T2 DE69330870 T2 DE 69330870T2 DE 69330870 T DE69330870 T DE 69330870T DE 69330870 T DE69330870 T DE 69330870T DE 69330870 T2 DE69330870 T2 DE 69330870T2
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor device
- planarization method
- planarization
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
- H01L21/76229—Concurrent filling of a plurality of trenches having a different trench shape or dimension, e.g. rectangular and V-shaped trenches, wide and narrow trenches, shallow and deep trenches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76819—Smoothing of the dielectric
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Element Separation (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP34261892 | 1992-12-22 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69330870D1 DE69330870D1 (de) | 2001-11-08 |
DE69330870T2 true DE69330870T2 (de) | 2002-04-11 |
Family
ID=18355172
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69330870T Expired - Fee Related DE69330870T2 (de) | 1992-12-22 | 1993-12-22 | Planarisierungsverfahren von einer Halbleitervorrichtung |
Country Status (4)
Country | Link |
---|---|
US (1) | US5540811A (de) |
EP (1) | EP0609551B1 (de) |
KR (1) | KR0133264B1 (de) |
DE (1) | DE69330870T2 (de) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69517211T2 (de) * | 1994-01-17 | 2001-02-08 | Sony Corp | Verfahren zur Oberflächen-Planarisierung von Halbleiter-Anordnungen |
KR100402217B1 (ko) * | 1994-11-07 | 2004-03-31 | 텍사스 인스트루먼츠 인코포레이티드 | 반도체소자제조방법 |
US5665202A (en) * | 1995-11-24 | 1997-09-09 | Motorola, Inc. | Multi-step planarization process using polishing at two different pad pressures |
US5683945A (en) * | 1996-05-16 | 1997-11-04 | Siemens Aktiengesellschaft | Uniform trench fill recess by means of isotropic etching |
KR100443020B1 (ko) * | 1997-12-13 | 2004-09-18 | 삼성전자주식회사 | 표면 평탄화 기술을 이용한 반도체 소자 제조방법 |
US5928961A (en) * | 1997-12-22 | 1999-07-27 | Industrial Technology Research Institute | Dishing inhibited shallow trench isolation |
US6022788A (en) * | 1997-12-23 | 2000-02-08 | Stmicroelectronics, Inc. | Method of forming an integrated circuit having spacer after shallow trench fill and integrated circuit formed thereby |
TW498440B (en) * | 1998-03-30 | 2002-08-11 | Hitachi Ltd | Manufacture method of semiconductor device |
US6265315B1 (en) | 1998-06-24 | 2001-07-24 | Taiwan Semiconductor Manufacturing Company | Method for improving chemical/mechanical polish uniformity over rough topography for semiconductor integrated circuits |
JP2000124305A (ja) * | 1998-10-15 | 2000-04-28 | Mitsubishi Electric Corp | 半導体装置 |
US6287972B1 (en) | 1999-03-04 | 2001-09-11 | Philips Semiconductor, Inc. | System and method for residue entrapment utilizing a polish and sacrificial fill for semiconductor fabrication |
DE10053467A1 (de) * | 2000-10-27 | 2002-05-16 | Infineon Technologies Ag | Verfahren zum Bilden von Kontakten in integrierten Schaltungen |
US7390463B2 (en) * | 2001-09-07 | 2008-06-24 | Corning Incorporated | Microcolumn-based, high-throughput microfluidic device |
US6884729B2 (en) * | 2002-02-11 | 2005-04-26 | Cabot Microelectronics Corporation | Global planarization method |
KR101793160B1 (ko) * | 2010-12-10 | 2017-11-03 | 삼성전자주식회사 | 반도체 소자 제조 방법 |
US8822287B2 (en) * | 2010-12-10 | 2014-09-02 | Samsung Electronics Co., Ltd. | Methods of manufacturing semiconductor devices |
KR101865566B1 (ko) * | 2011-09-08 | 2018-06-11 | 삼성전자주식회사 | 수직형 메모리 장치의 제조 방법 |
JP2016207973A (ja) * | 2015-04-28 | 2016-12-08 | 株式会社東芝 | 半導体装置の製造方法 |
KR102510707B1 (ko) | 2016-07-12 | 2023-03-17 | 에스케이하이닉스 주식회사 | 전자 장치 및 그 제조 방법 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4662064A (en) * | 1985-08-05 | 1987-05-05 | Rca Corporation | Method of forming multi-level metallization |
US4836885A (en) * | 1988-05-03 | 1989-06-06 | International Business Machines Corporation | Planarization process for wide trench isolation |
US5094972A (en) * | 1990-06-14 | 1992-03-10 | National Semiconductor Corp. | Means of planarizing integrated circuits with fully recessed isolation dielectric |
US5077234A (en) * | 1990-06-29 | 1991-12-31 | Digital Equipment Corporation | Planarization process utilizing three resist layers |
US5290396A (en) * | 1991-06-06 | 1994-03-01 | Lsi Logic Corporation | Trench planarization techniques |
-
1993
- 1993-12-21 KR KR1019930028760A patent/KR0133264B1/ko not_active IP Right Cessation
- 1993-12-22 EP EP93120675A patent/EP0609551B1/de not_active Expired - Lifetime
- 1993-12-22 DE DE69330870T patent/DE69330870T2/de not_active Expired - Fee Related
- 1993-12-22 US US08/172,483 patent/US5540811A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE69330870D1 (de) | 2001-11-08 |
EP0609551B1 (de) | 2001-10-04 |
KR0133264B1 (ko) | 1998-04-16 |
KR940016580A (ko) | 1994-07-23 |
US5540811A (en) | 1996-07-30 |
EP0609551A1 (de) | 1994-08-10 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |