DE69328759D1 - Schottky-Übergang Anordnung - Google Patents
Schottky-Übergang AnordnungInfo
- Publication number
- DE69328759D1 DE69328759D1 DE69328759T DE69328759T DE69328759D1 DE 69328759 D1 DE69328759 D1 DE 69328759D1 DE 69328759 T DE69328759 T DE 69328759T DE 69328759 T DE69328759 T DE 69328759T DE 69328759 D1 DE69328759 D1 DE 69328759D1
- Authority
- DE
- Germany
- Prior art keywords
- transition arrangement
- schottky transition
- schottky
- arrangement
- transition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000007704 transition Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/47—Schottky barrier electrodes
- H01L29/475—Schottky barrier electrodes on AIII-BV compounds
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035236—Superlattices; Multiple quantum well structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Electromagnetism (AREA)
- Nanotechnology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Biophysics (AREA)
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4308189A JPH06140624A (ja) | 1992-10-22 | 1992-10-22 | ショットキー接合素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69328759D1 true DE69328759D1 (de) | 2000-07-06 |
DE69328759T2 DE69328759T2 (de) | 2001-02-01 |
Family
ID=17977989
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69328759T Expired - Fee Related DE69328759T2 (de) | 1992-10-22 | 1993-10-21 | Schottky-Übergang Anordnung |
Country Status (4)
Country | Link |
---|---|
US (1) | US5572043A (de) |
EP (1) | EP0594442B1 (de) |
JP (1) | JPH06140624A (de) |
DE (1) | DE69328759T2 (de) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0997177A (ja) * | 1995-09-29 | 1997-04-08 | Toshiba Corp | コンピュータシステムの割り込み制御方式 |
ATE283549T1 (de) | 1997-06-24 | 2004-12-15 | Massachusetts Inst Technology | Kontrolle der verspannungsdichte durch verwendung von gradientenschichten und durch planarisierung |
US7227176B2 (en) | 1998-04-10 | 2007-06-05 | Massachusetts Institute Of Technology | Etch stop layer system |
US6380552B2 (en) | 1999-05-28 | 2002-04-30 | Hrl Laboratories, Llc | Low turn-on voltage InP Schottky device and method |
JP3652977B2 (ja) | 2000-06-06 | 2005-05-25 | ユーディナデバイス株式会社 | 半導体受光装置およびその製造方法 |
US6573126B2 (en) | 2000-08-16 | 2003-06-03 | Massachusetts Institute Of Technology | Process for producing semiconductor article using graded epitaxial growth |
US6649480B2 (en) * | 2000-12-04 | 2003-11-18 | Amberwave Systems Corporation | Method of fabricating CMOS inverter and integrated circuits utilizing strained silicon surface channel MOSFETs |
US6703688B1 (en) | 2001-03-02 | 2004-03-09 | Amberwave Systems Corporation | Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits |
US6830976B2 (en) | 2001-03-02 | 2004-12-14 | Amberwave Systems Corproation | Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits |
US6940089B2 (en) | 2001-04-04 | 2005-09-06 | Massachusetts Institute Of Technology | Semiconductor device structure |
WO2003079415A2 (en) | 2002-03-14 | 2003-09-25 | Amberwave Systems Corporation | Methods for fabricating strained layers on semiconductor substrates |
US7335545B2 (en) | 2002-06-07 | 2008-02-26 | Amberwave Systems Corporation | Control of strain in device layers by prevention of relaxation |
US6995430B2 (en) | 2002-06-07 | 2006-02-07 | Amberwave Systems Corporation | Strained-semiconductor-on-insulator device structures |
US7307273B2 (en) | 2002-06-07 | 2007-12-11 | Amberwave Systems Corporation | Control of strain in device layers by selective relaxation |
US7074623B2 (en) | 2002-06-07 | 2006-07-11 | Amberwave Systems Corporation | Methods of forming strained-semiconductor-on-insulator finFET device structures |
US7615829B2 (en) | 2002-06-07 | 2009-11-10 | Amberwave Systems Corporation | Elevated source and drain elements for strained-channel heterojuntion field-effect transistors |
US20030227057A1 (en) * | 2002-06-07 | 2003-12-11 | Lochtefeld Anthony J. | Strained-semiconductor-on-insulator device structures |
US6946371B2 (en) | 2002-06-10 | 2005-09-20 | Amberwave Systems Corporation | Methods of fabricating semiconductor structures having epitaxially grown source and drain elements |
US6982474B2 (en) | 2002-06-25 | 2006-01-03 | Amberwave Systems Corporation | Reacted conductive gate electrodes |
EP1588406B1 (de) | 2003-01-27 | 2019-07-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Halbleiterstrukturen mit strukturhomogenität |
EP1602125B1 (de) | 2003-03-07 | 2019-06-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Verfahren zur flachen grabenisolation |
US7393733B2 (en) | 2004-12-01 | 2008-07-01 | Amberwave Systems Corporation | Methods of forming hybrid fin field-effect transistor structures |
US20060113603A1 (en) * | 2004-12-01 | 2006-06-01 | Amberwave Systems Corporation | Hybrid semiconductor-on-insulator structures and related methods |
US10381502B2 (en) * | 2015-09-09 | 2019-08-13 | Teledyne Scientific & Imaging, Llc | Multicolor imaging device using avalanche photodiode |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5984589A (ja) * | 1982-11-08 | 1984-05-16 | Fujitsu Ltd | アバランシフオトダイオード |
US4616241A (en) * | 1983-03-22 | 1986-10-07 | The United States Of America As Represented By The United States Department Of Energy | Superlattice optical device |
US5115294A (en) * | 1989-06-29 | 1992-05-19 | At&T Bell Laboratories | Optoelectronic integrated circuit |
JPH08111541A (ja) * | 1989-12-08 | 1996-04-30 | Hitachi Ltd | 半導体装置 |
DE69229369T2 (de) * | 1991-03-28 | 2000-01-27 | Nec Corp | Halbleiterphotodetektor mit Lawinenmultiplikation |
JPH04372178A (ja) * | 1991-06-21 | 1992-12-25 | Nec Corp | 半導体受光素子 |
-
1992
- 1992-10-22 JP JP4308189A patent/JPH06140624A/ja active Pending
-
1993
- 1993-10-21 EP EP93308406A patent/EP0594442B1/de not_active Expired - Lifetime
- 1993-10-21 DE DE69328759T patent/DE69328759T2/de not_active Expired - Fee Related
-
1995
- 1995-05-15 US US08/441,640 patent/US5572043A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0594442A3 (de) | 1995-03-15 |
US5572043A (en) | 1996-11-05 |
DE69328759T2 (de) | 2001-02-01 |
EP0594442B1 (de) | 2000-05-31 |
JPH06140624A (ja) | 1994-05-20 |
EP0594442A2 (de) | 1994-04-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE69328759T2 (de) | Schottky-Übergang Anordnung | |
DE69405393T2 (de) | Selbstschliessende anordnung | |
DE69428863D1 (de) | Verbindungselement | |
DE59402020D1 (de) | Verbindungselement | |
BR9400853A (pt) | Zíper | |
FI932094A0 (fi) | Kylningsapparat i kranens vaexel | |
DE69407630T2 (de) | Induktive Anordnung | |
FI955395A0 (fi) | Shottky-kynnysjännitediodi | |
FI932732A0 (fi) | Rotorkonstruktion i en tvaolindningselektricitetsmaskin | |
DE59401908D1 (de) | Befestigungselement | |
DE69410147D1 (de) | Ladungsgekoppelte Anordnung | |
FI932264A0 (fi) | Gapformare i en pappersmaskin | |
DE69407922T2 (de) | Supraleiter | |
DE69506011T2 (de) | Supraleitende Anordnung | |
NO933444D0 (no) | Linearrangement | |
FI930927A0 (fi) | Banformningsparti i en pappersmaskin | |
NO930865L (no) | Tunglöftkran-arrangement | |
DE59409042D1 (de) | Verbindungselement | |
KR950019554U (ko) | 체결구 | |
SE9303279D0 (sv) | Arrangemang | |
BR7300053U (pt) | Disposicao em mini-valvula | |
FI833U1 (fi) | Dammfilter foer vaedringsluckor i foenster | |
FI1435U1 (fi) | Foer synskadande avsett hjaelpdon i elspisvred | |
FI932109A0 (fi) | Maetningselement i en givare | |
FI935503A0 (fi) | Elmotstaond i en sotlucka |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |