DE69325320D1 - Magnetoresistive Schicht und Verfahren zu ihrer Herstellung - Google Patents

Magnetoresistive Schicht und Verfahren zu ihrer Herstellung

Info

Publication number
DE69325320D1
DE69325320D1 DE69325320T DE69325320T DE69325320D1 DE 69325320 D1 DE69325320 D1 DE 69325320D1 DE 69325320 T DE69325320 T DE 69325320T DE 69325320 T DE69325320 T DE 69325320T DE 69325320 D1 DE69325320 D1 DE 69325320D1
Authority
DE
Germany
Prior art keywords
production
magnetoresistive layer
magnetoresistive
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69325320T
Other languages
English (en)
Other versions
DE69325320T2 (de
Inventor
Hiroshi Kano
Kazuhiko Hayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Application granted granted Critical
Publication of DE69325320D1 publication Critical patent/DE69325320D1/de
Publication of DE69325320T2 publication Critical patent/DE69325320T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Magnetic active materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
    • G11B5/3929—Disposition of magnetic thin films not used for directly coupling magnetic flux from the track to the MR film or for shielding
    • G11B5/3932—Magnetic biasing films
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/90—Magnetic feature
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/922—Static electricity metal bleed-off metallic stock
    • Y10S428/9265—Special properties
    • Y10S428/928—Magnetic property
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/11—Magnetic recording head
    • Y10T428/1107—Magnetoresistive
    • Y10T428/1121—Multilayer
    • Y10T428/1129—Super lattice [e.g., giant magneto resistance [GMR] or colossal magneto resistance [CMR], etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12465—All metal or with adjacent metals having magnetic properties, or preformed fiber orientation coordinate with shape
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12632—Four or more distinct components with alternate recurrence of each type component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
    • Y10T428/2495—Thickness [relative or absolute]
DE69325320T 1992-07-31 1993-07-29 Magnetoresistive Schicht und Verfahren zu ihrer Herstellung Expired - Fee Related DE69325320T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP22458992 1992-07-31
JP35057292 1992-12-04
JP5041505A JPH06220609A (ja) 1992-07-31 1993-03-02 磁気抵抗効果膜及びその製造方法並びにそれを用いた磁気抵抗効果素子、磁気抵抗効果型磁気ヘッド

Publications (2)

Publication Number Publication Date
DE69325320D1 true DE69325320D1 (de) 1999-07-22
DE69325320T2 DE69325320T2 (de) 1999-12-30

Family

ID=27290838

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69325320T Expired - Fee Related DE69325320T2 (de) 1992-07-31 1993-07-29 Magnetoresistive Schicht und Verfahren zu ihrer Herstellung

Country Status (4)

Country Link
US (1) US5447781A (de)
EP (1) EP0581295B1 (de)
JP (1) JPH06220609A (de)
DE (1) DE69325320T2 (de)

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US5549978A (en) * 1992-10-30 1996-08-27 Kabushiki Kaisha Toshiba Magnetoresistance effect element
US5657190A (en) * 1993-03-02 1997-08-12 Tdk Corporation Apparatus for detecting a magnetic field using a giant magnetoresistance effect multilayer
JPH07192919A (ja) * 1993-12-27 1995-07-28 Sony Corp 人工格子膜およびこれを用いた磁気抵抗効果素子
JP2970455B2 (ja) * 1994-03-14 1999-11-02 株式会社デンソー 磁気抵抗素子の製造方法およびその磁場処理装置
EP0685746A3 (de) * 1994-05-30 1996-12-04 Sony Corp Maqnetowiderstandeffektanordnung mit verbessertem thermischem Widerstand.
JPH0845034A (ja) * 1994-07-29 1996-02-16 Sony Corp 磁気抵抗型磁気ヘッド及び記録・再生用複合型磁気ヘッド、並びにこれらの製造方法
JP3952515B2 (ja) * 1994-09-09 2007-08-01 富士通株式会社 磁気抵抗効果素子、磁気記録装置及び磁気抵抗効果素子の製造方法
US5818323A (en) * 1994-09-09 1998-10-06 Sanyo Electric Co., Ltd. Magnetoresistive device
US5585986A (en) * 1995-05-15 1996-12-17 International Business Machines Corporation Digital magnetoresistive sensor based on the giant magnetoresistance effect
US5623235A (en) * 1995-09-22 1997-04-22 Hughes Aircraft Company Wide-bandwidth variable attenuator/modulator using giant magnetoristance technology
US5747997A (en) * 1996-06-05 1998-05-05 Regents Of The University Of Minnesota Spin-valve magnetoresistance sensor having minimal hysteresis problems
US6166539A (en) * 1996-10-30 2000-12-26 Regents Of The University Of Minnesota Magnetoresistance sensor having minimal hysteresis problems
JPH1049834A (ja) * 1996-08-07 1998-02-20 Sony Corp 多層磁気抵抗効果膜、磁気抵抗効果素子及び磁気抵抗効果型磁気ヘッド
US5945904A (en) * 1996-09-06 1999-08-31 Ford Motor Company Giant magnetoresistors with high sensitivity and reduced hysteresis and thin layers
US5731936A (en) * 1996-09-26 1998-03-24 International Business Machines Corporation Magnetoresistive (MR) sensor with coefficient enhancing that promotes thermal stability
US5976681A (en) * 1997-06-30 1999-11-02 Ford Global Technologies, Inc. Giant magnetoresistors with high sensitivity and reduced hysteresis
US6645647B1 (en) 2000-01-12 2003-11-11 Seagate Technology Llc Magnetic recording media including magnetically soft composite layer and method of making same
US6660357B1 (en) 2000-02-04 2003-12-09 Seagate Technology Llc Perpendicular magnetic recording media with laminated soft magnetic underlayer
US7087325B2 (en) * 2000-02-23 2006-08-08 Showa Denko Kabushiki Kaisha Magnetic recording medium and production process thereof
US6639763B1 (en) * 2000-03-15 2003-10-28 Tdk Corporation Magnetic transducer and thin film magnetic head
US6456467B1 (en) 2000-03-31 2002-09-24 Seagate Technology Llc Laminated shields with antiparallel magnetizations
US6902826B1 (en) 2000-08-18 2005-06-07 International Business Machines Corporation High moment films with sub-monolayer nanolaminations retaining magnetic anisotropy after hard axis annealing
US6818330B2 (en) 2000-08-25 2004-11-16 Seagate Technology Llc Perpendicular recording medium with antiferromagnetic exchange coupling in soft magnetic underlayers
JP2002090978A (ja) 2000-09-12 2002-03-27 Hoya Corp 位相シフトマスクブランクの製造方法、及び位相シフトマスクブランクの製造装置
US6777113B2 (en) 2001-08-14 2004-08-17 Seagate Technology Llc Multilayer films for optimized soft underlayer magnetic properties of dual layer perpendicular recording media
JP3794586B2 (ja) * 2001-08-24 2006-07-05 ナノネクサス インク スパッタされた膜において、均一な等方性の応力を生じさせるための方法および装置
AU2002366904A1 (en) * 2001-12-21 2003-07-09 Koninklijke Philips Electronics N.V. Sensor and method for measuring the areal density of magnetic nanoparticles on a micro-array
US6818961B1 (en) * 2003-06-30 2004-11-16 Freescale Semiconductor, Inc. Oblique deposition to induce magnetic anisotropy for MRAM cells
US20050013060A1 (en) * 2003-07-14 2005-01-20 International Business Machines Corporation Magnetoresistive sensor
JP4617101B2 (ja) * 2004-05-11 2011-01-19 株式会社昭和真空 スパッタ装置
JP4566681B2 (ja) * 2004-10-06 2010-10-20 株式会社昭和真空 スパッタ装置
US20070242395A1 (en) * 2004-10-15 2007-10-18 Bailey William E Methods of manipulating the relaxation rate in magnetic materials and devices for using the same
WO2009154009A1 (ja) * 2008-06-20 2009-12-23 キヤノンアネルバ株式会社 磁気抵抗素子の製造方法、スパッタ成膜チャンバー、スパッタ成膜チャンバーを有する磁気抵抗素子の製造装置、プログラム、記憶媒体
US8755154B2 (en) * 2011-09-13 2014-06-17 Seagate Technology Llc Tuned angled uniaxial anisotropy in trilayer magnetic sensors
US9036308B2 (en) 2011-09-21 2015-05-19 Seagate Technology Llc Varyinig morphology in magnetic sensor sub-layers
JP5901571B2 (ja) * 2013-05-21 2016-04-13 学校法人東海大学 成膜方法

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JP2533860B2 (ja) * 1986-09-24 1996-09-11 株式会社日立製作所 磁性超格子膜およびそれを用いた磁気ヘツド
DE3820475C1 (de) * 1988-06-16 1989-12-21 Kernforschungsanlage Juelich Gmbh, 5170 Juelich, De
JPH0223681A (ja) * 1988-07-12 1990-01-25 Nec Corp 磁気抵抗効果素子
FR2648942B1 (fr) * 1989-06-27 1995-08-11 Thomson Csf Capteur a effet magnetoresistif
US5151137A (en) * 1989-11-17 1992-09-29 Hitachi Metals Ltd. Soft magnetic alloy with ultrafine crystal grains and method of producing same
DE4027226A1 (de) * 1990-02-13 1991-08-14 Forschungszentrum Juelich Gmbh Magnetfeldsensor mit ferromagnetischer, duenner schicht
US5157570A (en) * 1990-06-29 1992-10-20 Digital Equipment Corporation Magnetic pole configuration for high density thin film recording head
US5206590A (en) * 1990-12-11 1993-04-27 International Business Machines Corporation Magnetoresistive sensor based on the spin valve effect
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JPH05183212A (ja) * 1991-07-30 1993-07-23 Toshiba Corp 磁気抵抗効果素子
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Also Published As

Publication number Publication date
EP0581295A1 (de) 1994-02-02
US5447781A (en) 1995-09-05
DE69325320T2 (de) 1999-12-30
JPH06220609A (ja) 1994-08-09
EP0581295B1 (de) 1999-06-16

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee