DE69321150D1 - Flash-EPROM-Zellen-Matrix vom virtuellen Erdungstyp mit wechselnder Source - Google Patents

Flash-EPROM-Zellen-Matrix vom virtuellen Erdungstyp mit wechselnder Source

Info

Publication number
DE69321150D1
DE69321150D1 DE69321150T DE69321150T DE69321150D1 DE 69321150 D1 DE69321150 D1 DE 69321150D1 DE 69321150 T DE69321150 T DE 69321150T DE 69321150 T DE69321150 T DE 69321150T DE 69321150 D1 DE69321150 D1 DE 69321150D1
Authority
DE
Germany
Prior art keywords
cell matrix
flash eprom
eprom cell
grounding type
virtual grounding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69321150T
Other languages
English (en)
Inventor
Albert Bergemont
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fairchild Semiconductor Corp
Original Assignee
Fairchild Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fairchild Semiconductor Corp filed Critical Fairchild Semiconductor Corp
Application granted granted Critical
Publication of DE69321150D1 publication Critical patent/DE69321150D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0491—Virtual ground arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
DE69321150T 1992-02-04 1993-02-02 Flash-EPROM-Zellen-Matrix vom virtuellen Erdungstyp mit wechselnder Source Expired - Lifetime DE69321150D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/830,938 US5346842A (en) 1992-02-04 1992-02-04 Method of making alternate metal/source virtual ground flash EPROM cell array

Publications (1)

Publication Number Publication Date
DE69321150D1 true DE69321150D1 (de) 1998-10-29

Family

ID=25257970

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69321150T Expired - Lifetime DE69321150D1 (de) 1992-02-04 1993-02-02 Flash-EPROM-Zellen-Matrix vom virtuellen Erdungstyp mit wechselnder Source

Country Status (4)

Country Link
US (2) US5346842A (de)
EP (1) EP0555039B1 (de)
JP (1) JPH0786530A (de)
DE (1) DE69321150D1 (de)

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JP2774734B2 (ja) * 1992-05-26 1998-07-09 株式会社東芝 半導体記憶装置およびその製造方法
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WO1994014196A1 (en) * 1992-12-08 1994-06-23 National Semiconductor Corporation High density contactless flash eprom array using channel erase
JPH0745730A (ja) * 1993-02-19 1995-02-14 Sgs Thomson Microelettronica Spa ２レベルのポリシリコンｅｅｐｒｏｍメモリ・セル並びにそのプログラミング方法及び製造方法、集積されたｅｅｐｒｏｍ記憶回路、ｅｅｐｒｏｍメモリ・セル及びそのプログラミング方法
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US5409854A (en) * 1994-03-15 1995-04-25 National Semiconductor Corporation Method for forming a virtual-ground flash EPROM array with floating gates that are self aligned to the field oxide regions of the array
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US5574685A (en) * 1994-09-01 1996-11-12 Advanced Micro Devices, Inc. Self-aligned buried channel/junction stacked gate flash memory cell
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US5550772A (en) * 1995-02-13 1996-08-27 National Semiconductor Corporation Memory array utilizing multi-state memory cells
US5511021A (en) * 1995-02-22 1996-04-23 National Semiconductor Corporation Method for programming a single EPROM or flash memory cell to store multiple levels of data that utilizes a forward-biased source-to-substrate junction
US5557567A (en) * 1995-04-06 1996-09-17 National Semiconductor Corp. Method for programming an AMG EPROM or flash memory when cells of the array are formed to store multiple bits of data
US5587949A (en) * 1995-04-27 1996-12-24 National Semiconductor Corporation Method for programming an ETOX EPROM or flash memory when cells of the array are formed to store multiple bits of data
US5576233A (en) * 1995-06-21 1996-11-19 Texas Instruments Incorporated Method for making an EEPROM with thermal oxide isolated floating gate
JP2850879B2 (ja) * 1995-09-18 1999-01-27 現代電子産業株式会社 半導体素子のワード線製造方法
US5753525A (en) * 1995-12-19 1998-05-19 International Business Machines Corporation Method of making EEPROM cell with improved coupling ratio
US5780893A (en) * 1995-12-28 1998-07-14 Nippon Steel Corporation Non-volatile semiconductor memory device including memory transistor with a composite gate structure
JP3075211B2 (ja) * 1996-07-30 2000-08-14 日本電気株式会社 半導体装置およびその製造方法
US5861069A (en) * 1996-08-31 1999-01-19 Skm Limited Method for forming an indium antimonide layer
KR100242723B1 (ko) * 1997-08-12 2000-02-01 윤종용 불휘발성 반도체 메모리 장치의 셀 어레이 구조 및 그 제조방법
US5899713A (en) * 1997-10-28 1999-05-04 International Business Machines Corporation Method of making NVRAM cell with planar control gate
US5939750A (en) 1998-01-21 1999-08-17 Advanced Micro Devices Use of implanted ions to reduce oxide-nitride-oxide (ONO) etch residue and polystringers
US6043120A (en) * 1998-03-03 2000-03-28 Advanced Micro Devices, Inc. Elimination of oxynitride (ONO) etch residue and polysilicon stringers through isolation of floating gates on adjacent bitlines by polysilicon oxidation
US6030868A (en) * 1998-03-03 2000-02-29 Advanced Micro Devices, Inc. Elimination of oxynitride (ONO) etch residue and polysilicon stringers through isolation of floating gates on adjacent bitlines by polysilicon oxidation
US6051451A (en) * 1998-04-21 2000-04-18 Advanced Micro Devices, Inc. Heavy ion implant process to eliminate polystringers in high density type flash memory devices
US6011289A (en) * 1998-09-16 2000-01-04 Advanced Micro Devices, Inc. Metal oxide stack for flash memory application
US6272050B1 (en) 1999-05-28 2001-08-07 Vlsi Technology, Inc. Method and apparatus for providing an embedded flash-EEPROM technology
US6177703B1 (en) 1999-05-28 2001-01-23 Vlsi Technology, Inc. Method and apparatus for producing a single polysilicon flash EEPROM having a select transistor and a floating gate transistor
US6225162B1 (en) 1999-07-06 2001-05-01 Taiwan Semiconductor Manufacturing Company Step-shaped floating poly-si gate to improve gate coupling ratio for flash memory application
US6084262A (en) * 1999-08-19 2000-07-04 Worldwide Semiconductor Mfg Etox cell programmed by band-to-band tunneling induced substrate hot electron and read by gate induced drain leakage current
US6850440B2 (en) 1999-12-27 2005-02-01 Winbond Electronics Corporation Method for improved programming efficiency in flash memory cells
US6363012B1 (en) 1999-12-27 2002-03-26 Winbond Electronics Corporation Method for improved programming efficiency in flash memory cells
US6222761B1 (en) * 2000-07-17 2001-04-24 Microchip Technology Incorporated Method for minimizing program disturb in a memory cell
JP4819215B2 (ja) * 2000-07-24 2011-11-24 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置およびその製造方法
US6511882B1 (en) * 2001-11-23 2003-01-28 Macronix International Co., Ltd. Method for preventing the leakage path in embedded non-volatile memory
US6716698B1 (en) * 2002-09-10 2004-04-06 Advanced Micro Devices, Inc. Virtual ground silicide bit line process for floating gate flash memory
TW591761B (en) * 2003-07-11 2004-06-11 Macronix Int Co Ltd NAND type binary nitride read only memory and the manufacturing method
US7042767B2 (en) 2004-08-02 2006-05-09 Spansion, Llc Flash memory unit and method of programming a flash memory device
US7416956B2 (en) * 2004-11-23 2008-08-26 Sandisk Corporation Self-aligned trench filling for narrow gap isolation regions
US7381615B2 (en) * 2004-11-23 2008-06-03 Sandisk Corporation Methods for self-aligned trench filling with grown dielectric for high coupling ratio in semiconductor devices
US20080157169A1 (en) * 2006-12-28 2008-07-03 Yuan Jack H Shield plates for reduced field coupling in nonvolatile memory
US20080160680A1 (en) * 2006-12-28 2008-07-03 Yuan Jack H Methods of fabricating shield plates for reduced field coupling in nonvolatile memory

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JPS57102073A (en) * 1980-12-16 1982-06-24 Mitsubishi Electric Corp Semiconductor memory and manufacture thereof
US4874715A (en) * 1987-05-20 1989-10-17 Texas Instruments Incorporated Read only memory with improved channel length control and method of forming
US4785375A (en) * 1987-06-11 1988-11-15 Tam Ceramics, Inc. Temperature stable dielectric composition at high and low frequencies
JP2573263B2 (ja) * 1987-12-09 1997-01-22 株式会社東芝 半導体装置の製造方法
US5017980A (en) * 1988-07-15 1991-05-21 Texas Instruments Incorporated Electrically-erasable, electrically-programmable read-only memory cell
US4992980A (en) * 1989-08-07 1991-02-12 Intel Corporation Novel architecture for virtual ground high-density EPROMS
US5111270A (en) * 1990-02-22 1992-05-05 Intel Corporation Three-dimensional contactless non-volatile memory cell
US5204835A (en) * 1990-06-13 1993-04-20 Waferscale Integration Inc. Eprom virtual ground array
US5151375A (en) * 1990-06-13 1992-09-29 Waferscale Integration, Inc. EPROM virtual ground array
US5032881A (en) * 1990-06-29 1991-07-16 National Semiconductor Corporation Asymmetric virtual ground EPROM cell and fabrication method
US5149665A (en) * 1991-07-10 1992-09-22 Micron Technology, Inc. Conductive source line for high density programmable read-only memory applications

Also Published As

Publication number Publication date
US5464999A (en) 1995-11-07
EP0555039A3 (en) 1994-05-25
US5346842A (en) 1994-09-13
EP0555039B1 (de) 1998-09-23
JPH0786530A (ja) 1995-03-31
EP0555039A2 (de) 1993-08-11

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Legal Events

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