DE69318279D1 - Optische Komponente für Röntgenbestrahlungen - Google Patents

Optische Komponente für Röntgenbestrahlungen

Info

Publication number
DE69318279D1
DE69318279D1 DE69318279T DE69318279T DE69318279D1 DE 69318279 D1 DE69318279 D1 DE 69318279D1 DE 69318279 T DE69318279 T DE 69318279T DE 69318279 T DE69318279 T DE 69318279T DE 69318279 D1 DE69318279 D1 DE 69318279D1
Authority
DE
Germany
Prior art keywords
optical component
ray radiation
ray
radiation
optical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69318279T
Other languages
English (en)
Other versions
DE69318279T2 (de
Inventor
Kathleen Regina Early
Richard Edwin Howard
Donald Milan Tennant
Warren Kazmir Waskiewicz
David Lee Windt
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
AT&T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AT&T Corp filed Critical AT&T Corp
Application granted granted Critical
Publication of DE69318279D1 publication Critical patent/DE69318279D1/de
Publication of DE69318279T2 publication Critical patent/DE69318279T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • G21K1/062—Devices having a multilayer structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K2201/00—Arrangements for handling radiation or particles
    • G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
    • G21K2201/061—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements characterised by a multilayer structure
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K2201/00—Arrangements for handling radiation or particles
    • G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
    • G21K2201/067—Construction details

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Optical Elements Other Than Lenses (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Weting (AREA)
  • Formation Of Insulating Films (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
DE69318279T 1993-01-05 1993-12-08 Optische Komponente für Röntgenbestrahlungen Expired - Fee Related DE69318279T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/000,857 US5265143A (en) 1993-01-05 1993-01-05 X-ray optical element including a multilayer coating

Publications (2)

Publication Number Publication Date
DE69318279D1 true DE69318279D1 (de) 1998-06-04
DE69318279T2 DE69318279T2 (de) 1998-08-27

Family

ID=21693311

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69318279T Expired - Fee Related DE69318279T2 (de) 1993-01-05 1993-12-08 Optische Komponente für Röntgenbestrahlungen

Country Status (4)

Country Link
US (1) US5265143A (de)
EP (2) EP0605966B1 (de)
JP (1) JP2918781B2 (de)
DE (1) DE69318279T2 (de)

Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5265143A (en) * 1993-01-05 1993-11-23 At&T Bell Laboratories X-ray optical element including a multilayer coating
US5349192A (en) * 1993-05-20 1994-09-20 Wisconsin Alumni Research Foundation Solid state detector for polarized x-rays
US6043437A (en) * 1996-12-20 2000-03-28 Alfred E. Mann Foundation Alumina insulation for coating implantable components and other microminiature devices
JPH1138192A (ja) * 1997-07-17 1999-02-12 Nikon Corp 多層膜反射鏡
US5958605A (en) * 1997-11-10 1999-09-28 Regents Of The University Of California Passivating overcoat bilayer for multilayer reflective coatings for extreme ultraviolet lithography
JP4289584B2 (ja) * 1998-01-27 2009-07-01 サーモ エレクトロン サイエンティフィック インスツルメンツ エルエルシー． Ｘ線コリメータ、波長分散ｘ線スペクトロメータ及びサンプル試料から放射するｘ線を検出する方法
US6110607A (en) * 1998-02-20 2000-08-29 The Regents Of The University Of California High reflectance-low stress Mo-Si multilayer reflective coatings
EP0955565A3 (de) * 1998-05-08 2001-05-30 Nikon Corporation Spiegel für einen Belichtungsapparat unter Verwendung weicher Röntgenstrahlen
US6295164B1 (en) * 1998-09-08 2001-09-25 Nikon Corporation Multi-layered mirror
US6479818B1 (en) 1998-09-17 2002-11-12 Thermo Noran Inc. Application of x-ray optics to energy dispersive spectroscopy
US6118599A (en) * 1998-11-03 2000-09-12 Nikon Corporation Hybrid optical barrel
TWI267704B (en) * 1999-07-02 2006-12-01 Asml Netherlands Bv Capping layer for EUV optical elements
WO2001007967A1 (en) * 1999-07-22 2001-02-01 Corning Incorporated Extreme ultraviolet soft x-ray projection lithographic method and mask devices
JP3766802B2 (ja) * 1999-07-22 2006-04-19 コーニング インコーポレイテッド 遠紫外軟ｘ線投影リソグラフィー法システムおよびリソグラフィーエレメント
US6421417B1 (en) * 1999-08-02 2002-07-16 Osmic, Inc. Multilayer optics with adjustable working wavelength
US7261957B2 (en) * 2000-03-31 2007-08-28 Carl Zeiss Smt Ag Multilayer system with protecting layer system and production method
DE10016008A1 (de) * 2000-03-31 2001-10-11 Zeiss Carl Villagensystem und dessen Herstellung
US20070281109A1 (en) * 2000-03-31 2007-12-06 Carl Zeiss Smt Ag Multilayer system with protecting layer system and production method
RU2000124129A (ru) * 2000-09-20 2002-09-10 Карл Цайсс (De) Оптический элемент и способ восстановления субстрата
US20020171922A1 (en) * 2000-10-20 2002-11-21 Nikon Corporation Multilayer reflective mirrors for EUV, wavefront-aberration-correction methods for same, and EUV optical systems comprising same
KR100725859B1 (ko) * 2001-05-23 2007-06-08 학교법인 한양학원 극자외선 노광 공정용 Ｒｕ/Ｍｏ/Ｓｉ 반사형 다층 박막미러
JP3600849B2 (ja) * 2001-06-11 2004-12-15 理学電機工業株式会社 ホウ素蛍光ｘ線分析用多層膜分光素子
EP1480083A3 (de) * 2001-06-13 2004-12-01 ASML Netherlands B.V. Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
US6747282B2 (en) 2001-06-13 2004-06-08 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method, and device manufactured thereby
US20030008148A1 (en) * 2001-07-03 2003-01-09 Sasa Bajt Optimized capping layers for EUV multilayers
DE10134265A1 (de) * 2001-07-18 2003-02-06 Geesthacht Gkss Forschung Einrichtung und Verfahren zur Analyse atomarer und/oder molekularer Elemente mittels wellenlängendispersiver,röntgenspektrometrischer Einrichtungen
SG103376A1 (en) * 2001-12-04 2004-04-29 Asml Netherlands Bv Lithographic apparatus, device manufacturing method, and method of manufacturing and optical element
EP1318431A1 (de) * 2001-12-04 2003-06-11 ASML Netherlands B.V. Lithographischer Apparat, Verfahren zur Herstellung einer Vorrichtung, und Verfahren zur Herstellung eines optischen Elementes
US6643353B2 (en) 2002-01-10 2003-11-04 Osmic, Inc. Protective layer for multilayers exposed to x-rays
US6759141B2 (en) * 2002-04-30 2004-07-06 The Regents Of The University Of California Oxidation preventative capping layer for deep-ultra-violet and soft x-ray multilayers
JP3919599B2 (ja) * 2002-05-17 2007-05-30 キヤノン株式会社 光学素子、当該光学素子を有する光源装置及び露光装置
DE10233828A1 (de) * 2002-07-24 2004-02-12 Carl Zeiss Semiconductor Manufacturing Technologies Ag Optische Komponente umfassend ein Material mit einem Nulldurchgang der thermischer Längsausdehnung
US7428037B2 (en) * 2002-07-24 2008-09-23 Carl Zeiss Smt Ag Optical component that includes a material having a thermal longitudinal expansion with a zero crossing
AU2003255736A1 (en) * 2002-07-26 2004-02-16 Bede Plc Optical device for high energy radiation
CN100495210C (zh) * 2002-08-28 2009-06-03 Asml荷兰有限公司 光刻设备和器件制造方法
US6917471B2 (en) * 2003-01-24 2005-07-12 Sumitomo Electric Industries, Ltd. Diffraction grating element
US7019904B2 (en) * 2003-02-18 2006-03-28 Sumitomo Electric Industries, Ltd. Diffraction grating element, production method of diffraction grating element, and method of designing diffraction grating element
KR101052386B1 (ko) * 2003-09-27 2011-07-28 칼 짜이스 에스엠테 게엠베하 영점 교차 온도 근처에서 열팽창 계수의 온도에 따라, 상이한 기울기 부호를 갖는 재료로 구성된 미러들을 구비한 초단파 자외선 투영 광학계
JP4566791B2 (ja) * 2004-03-26 2010-10-20 キヤノン株式会社 軟ｘ線多層膜反射鏡
US7522335B2 (en) * 2004-03-29 2009-04-21 Intel Corporation Broad-angle multilayer mirror design
DE102007054731A1 (de) * 2007-11-14 2009-05-20 Carl Zeiss Smt Ag Optisches Element zur Reflexion von UV-Strahlung, Herstellungsverfahren dafür und Projektionsbelichtungsanlage damit
US7960701B2 (en) * 2007-12-20 2011-06-14 Cymer, Inc. EUV light source components and methods for producing, using and refurbishing same
DE102008054882A1 (de) * 2008-01-08 2009-07-16 Carl Zeiss Smt Ag Reparaturverfahren für optische Elemente mit Beschichtung und entsprechende optische Elemente
US7641349B1 (en) 2008-09-22 2010-01-05 Cymer, Inc. Systems and methods for collector mirror temperature control using direct contact heat transfer
DE102022208657A1 (de) 2021-11-25 2023-05-25 Carl Zeiss Smt Gmbh Verfahren zum entschichten eines euv - spiegels
DE102023201546B3 (de) 2023-02-22 2024-01-25 Carl Zeiss Smt Gmbh Verfahren zum Entschichten einer optischen Oberfläche, Vorrichtung zum Entschichten einer optischen Oberfläche und Lithografiesystem

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4261771A (en) * 1979-10-31 1981-04-14 Bell Telephone Laboratories, Incorporated Method of fabricating periodic monolayer semiconductor structures by molecular beam epitaxy
US5003567A (en) * 1989-02-09 1991-03-26 Hawryluk Andrew M Soft x-ray reduction camera for submicron lithography
DD296579A5 (de) * 1990-07-11 1991-12-05 Humboldt-Universitaet Zu Berlin,Direktorat Fuer Forschung,De Transparente mehrfachstruktur auf halbleiterleuchtkoerpern und -detektoren
US5265143A (en) * 1993-01-05 1993-11-23 At&T Bell Laboratories X-ray optical element including a multilayer coating

Also Published As

Publication number Publication date
EP0605966B1 (de) 1998-04-29
EP0769787A1 (de) 1997-04-23
DE69318279T2 (de) 1998-08-27
US5265143A (en) 1993-11-23
EP0605966A1 (de) 1994-07-13
JP2918781B2 (ja) 1999-07-12
JPH06273604A (ja) 1994-09-30

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee