DE69314362T2 - Statischer RAM - Google Patents
Statischer RAMInfo
- Publication number
- DE69314362T2 DE69314362T2 DE69314362T DE69314362T DE69314362T2 DE 69314362 T2 DE69314362 T2 DE 69314362T2 DE 69314362 T DE69314362 T DE 69314362T DE 69314362 T DE69314362 T DE 69314362T DE 69314362 T2 DE69314362 T2 DE 69314362T2
- Authority
- DE
- Germany
- Prior art keywords
- static ram
- static
- ram
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000003068 static effect Effects 0.000 title 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1048—Data bus control circuits, e.g. precharging, presetting, equalising
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
- G11C11/419—Read-write [R-W] circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP01551492A JP3385622B2 (ja) | 1992-01-30 | 1992-01-30 | スタティックram |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69314362D1 DE69314362D1 (de) | 1997-11-13 |
DE69314362T2 true DE69314362T2 (de) | 1998-01-29 |
Family
ID=11890931
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69314362T Expired - Fee Related DE69314362T2 (de) | 1992-01-30 | 1993-01-29 | Statischer RAM |
Country Status (4)
Country | Link |
---|---|
US (1) | US5841704A (de) |
EP (1) | EP0554183B1 (de) |
JP (1) | JP3385622B2 (de) |
DE (1) | DE69314362T2 (de) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6075729A (en) * | 1997-09-05 | 2000-06-13 | Hitachi, Ltd. | High-speed static random access memory |
KR100280428B1 (ko) * | 1998-01-16 | 2001-02-01 | 김영환 | 다수의문턱전압을가지는메모리셀을센싱하는회로 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58168272A (ja) * | 1982-03-30 | 1983-10-04 | Fujitsu Ltd | Mis形半導体記憶装置 |
JPS613390A (ja) * | 1984-06-15 | 1986-01-09 | Hitachi Ltd | 記憶装置 |
JPH0731908B2 (ja) * | 1985-10-09 | 1995-04-10 | 株式会社東芝 | 半導体記憶装置 |
JPS62260355A (ja) * | 1986-05-06 | 1987-11-12 | Toshiba Corp | 半導体集積回路装置 |
JP3107556B2 (ja) * | 1990-06-01 | 2000-11-13 | 株式会社東芝 | ダイナミック型半導体記憶装置 |
JP3247402B2 (ja) * | 1991-07-25 | 2002-01-15 | 株式会社東芝 | 半導体装置及び不揮発性半導体記憶装置 |
-
1992
- 1992-01-30 JP JP01551492A patent/JP3385622B2/ja not_active Expired - Fee Related
-
1993
- 1993-01-29 EP EP93400225A patent/EP0554183B1/de not_active Expired - Lifetime
- 1993-01-29 DE DE69314362T patent/DE69314362T2/de not_active Expired - Fee Related
-
1997
- 1997-04-10 US US08/838,782 patent/US5841704A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0554183A2 (de) | 1993-08-04 |
EP0554183B1 (de) | 1997-10-08 |
JP3385622B2 (ja) | 2003-03-10 |
EP0554183A3 (de) | 1994-01-05 |
DE69314362D1 (de) | 1997-11-13 |
JPH05210988A (ja) | 1993-08-20 |
US5841704A (en) | 1998-11-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |