DE69314305T2 - Verfahren zur Reparatur eines mehrschichtigen optischen Elementes - Google Patents
Verfahren zur Reparatur eines mehrschichtigen optischen ElementesInfo
- Publication number
- DE69314305T2 DE69314305T2 DE69314305T DE69314305T DE69314305T2 DE 69314305 T2 DE69314305 T2 DE 69314305T2 DE 69314305 T DE69314305 T DE 69314305T DE 69314305 T DE69314305 T DE 69314305T DE 69314305 T2 DE69314305 T2 DE 69314305T2
- Authority
- DE
- Germany
- Prior art keywords
- repairing
- optical element
- multilayer optical
- multilayer
- optical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000003287 optical effect Effects 0.000 title 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/72—Repair or correction of mask defects
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
- G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
- G21K1/062—Devices having a multilayer structure
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K2201/00—Arrangements for handling radiation or particles
- G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
- G21K2201/061—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements characterised by a multilayer structure
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K2201/00—Arrangements for handling radiation or particles
- G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
- G21K2201/067—Construction details
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- General Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Optical Elements Other Than Lenses (AREA)
- Weting (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/000,856 US5356662A (en) | 1993-01-05 | 1993-01-05 | Method for repairing an optical element which includes a multilayer coating |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69314305D1 DE69314305D1 (de) | 1997-11-06 |
DE69314305T2 true DE69314305T2 (de) | 1998-04-09 |
Family
ID=21693304
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69314305T Expired - Fee Related DE69314305T2 (de) | 1993-01-05 | 1993-12-06 | Verfahren zur Reparatur eines mehrschichtigen optischen Elementes |
Country Status (4)
Country | Link |
---|---|
US (1) | US5356662A (de) |
EP (1) | EP0605961B1 (de) |
JP (1) | JP2918782B2 (de) |
DE (1) | DE69314305T2 (de) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0652400B1 (de) * | 1993-11-05 | 2000-09-20 | Vari-Lite, Inc. | Lichtmusterschablone und Laserablationsverfahren bzw. -gerät zu deren Herstellung |
US5698113A (en) * | 1996-02-22 | 1997-12-16 | The Regents Of The University Of California | Recovery of Mo/Si multilayer coated optical substrates |
US6049588A (en) * | 1997-07-10 | 2000-04-11 | Focused X-Rays | X-ray collimator for lithography |
US5958605A (en) * | 1997-11-10 | 1999-09-28 | Regents Of The University Of California | Passivating overcoat bilayer for multilayer reflective coatings for extreme ultraviolet lithography |
US6110607A (en) * | 1998-02-20 | 2000-08-29 | The Regents Of The University Of California | High reflectance-low stress Mo-Si multilayer reflective coatings |
US6235434B1 (en) * | 1998-12-08 | 2001-05-22 | Euv Llc | Method for mask repair using defect compensation |
JP2000338299A (ja) * | 1999-05-28 | 2000-12-08 | Mitsubishi Electric Corp | X線露光装置、x線露光方法、x線マスク、x線ミラー、シンクロトロン放射装置、シンクロトロン放射方法および半導体装置 |
TW561279B (en) * | 1999-07-02 | 2003-11-11 | Asml Netherlands Bv | Reflector for reflecting radiation in a desired wavelength range, lithographic projection apparatus containing the same and method for their preparation |
KR100647968B1 (ko) | 1999-07-22 | 2006-11-17 | 코닝 인코포레이티드 | 극 자외선 소프트 x-선 투사 리소그라피 방법 및 마스크디바이스 |
AU6208300A (en) * | 1999-07-22 | 2001-02-13 | Corning Incorporated | Extreme ultraviolet soft x-ray projection lithographic method system and lithography elements |
JP2002093684A (ja) | 2000-09-18 | 2002-03-29 | Canon Inc | X線露光装置、x線露光方法、半導体製造装置および微細構造体 |
US6776006B2 (en) * | 2000-10-13 | 2004-08-17 | Corning Incorporated | Method to avoid striae in EUV lithography mirrors |
US6643353B2 (en) | 2002-01-10 | 2003-11-04 | Osmic, Inc. | Protective layer for multilayers exposed to x-rays |
US6759141B2 (en) * | 2002-04-30 | 2004-07-06 | The Regents Of The University Of California | Oxidation preventative capping layer for deep-ultra-violet and soft x-ray multilayers |
JP3919599B2 (ja) * | 2002-05-17 | 2007-05-30 | キヤノン株式会社 | 光学素子、当該光学素子を有する光源装置及び露光装置 |
US7176610B2 (en) * | 2004-02-10 | 2007-02-13 | Toshiba Machine America, Inc. | High brightness thermionic cathode |
JP4566791B2 (ja) * | 2004-03-26 | 2010-10-20 | キヤノン株式会社 | 軟x線多層膜反射鏡 |
JP2006308483A (ja) * | 2005-04-28 | 2006-11-09 | Canon Inc | 多層膜及び多層膜の製造方法 |
US7960701B2 (en) * | 2007-12-20 | 2011-06-14 | Cymer, Inc. | EUV light source components and methods for producing, using and refurbishing same |
US7641349B1 (en) | 2008-09-22 | 2010-01-05 | Cymer, Inc. | Systems and methods for collector mirror temperature control using direct contact heat transfer |
JP5691677B2 (ja) * | 2011-03-10 | 2015-04-01 | 凸版印刷株式会社 | 反射型フォトマスクの位相欠陥修正方法 |
WO2014113617A1 (en) | 2013-01-21 | 2014-07-24 | Innovative Finishes LLC | Refurbished component, electronic device including the same, and method of refurbishing a component of an electronic device |
US9075316B2 (en) | 2013-11-15 | 2015-07-07 | Globalfoundries Inc. | EUV mask for use during EUV photolithography processes |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4129463A (en) * | 1977-06-29 | 1978-12-12 | The United States Of America As Represented By The United States Department Of Energy | Polycrystalline silicon semiconducting material by nuclear transmutation doping |
US4260451A (en) * | 1980-03-17 | 1981-04-07 | International Business Machines Corp. | Method of reworking substrates, and solutions for use therein |
US5165954A (en) * | 1986-09-02 | 1992-11-24 | Microbeam, Inc. | Method for repairing semiconductor masks & reticles |
EP0279670B1 (de) * | 1987-02-18 | 1997-10-29 | Canon Kabushiki Kaisha | Reflexionsmaske |
US5003567A (en) * | 1989-02-09 | 1991-03-26 | Hawryluk Andrew M | Soft x-ray reduction camera for submicron lithography |
JP3047541B2 (ja) * | 1991-08-22 | 2000-05-29 | 株式会社日立製作所 | 反射型マスクおよび欠陥修正方法 |
-
1993
- 1993-01-05 US US08/000,856 patent/US5356662A/en not_active Expired - Lifetime
- 1993-12-06 EP EP93309760A patent/EP0605961B1/de not_active Expired - Lifetime
- 1993-12-06 DE DE69314305T patent/DE69314305T2/de not_active Expired - Fee Related
-
1994
- 1994-01-05 JP JP6011279A patent/JP2918782B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH06273605A (ja) | 1994-09-30 |
JP2918782B2 (ja) | 1999-07-12 |
EP0605961A1 (de) | 1994-07-13 |
EP0605961B1 (de) | 1997-10-01 |
DE69314305D1 (de) | 1997-11-06 |
US5356662A (en) | 1994-10-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |