DE69311774T2 - Verfahren zur Herstellung einer integrierten Schaltung mit einem auf einer Keramikschicht basierenden hermetischen Schutz - Google Patents

Verfahren zur Herstellung einer integrierten Schaltung mit einem auf einer Keramikschicht basierenden hermetischen Schutz

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Publication number
DE69311774T2
DE69311774T2 DE69311774T DE69311774T DE69311774T2 DE 69311774 T2 DE69311774 T2 DE 69311774T2 DE 69311774 T DE69311774 T DE 69311774T DE 69311774 T DE69311774 T DE 69311774T DE 69311774 T2 DE69311774 T2 DE 69311774T2
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DE
Germany
Prior art keywords
layer
ceramic
circuit
silicon
preceramic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69311774T
Other languages
German (de)
English (en)
Other versions
DE69311774D1 (de
Inventor
Robert Charles Camilletti
Grish Chandra
Mark Jon Loboda
Keith Winton Michael
David Alan Sierawski
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dow Silicones Corp
Original Assignee
Dow Corning Corp
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Publication date
Application filed by Dow Corning Corp filed Critical Dow Corning Corp
Publication of DE69311774D1 publication Critical patent/DE69311774D1/de
Application granted granted Critical
Publication of DE69311774T2 publication Critical patent/DE69311774T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

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  • Engineering & Computer Science (AREA)
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  • Microelectronics & Electronic Packaging (AREA)
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  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
DE69311774T 1992-08-28 1993-08-19 Verfahren zur Herstellung einer integrierten Schaltung mit einem auf einer Keramikschicht basierenden hermetischen Schutz Expired - Fee Related DE69311774T2 (de)

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JP (1) JPH06177185A (enrdf_load_stackoverflow)
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CA (1) CA2104487A1 (enrdf_load_stackoverflow)
DE (1) DE69311774T2 (enrdf_load_stackoverflow)
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DE4427309C2 (de) * 1994-08-02 1999-12-02 Ibm Herstellung eines Trägerelementmoduls zum Einbau in Chipkarten oder andere Datenträgerkarten
DE19548046C2 (de) * 1995-12-21 1998-01-15 Siemens Matsushita Components Verfahren zur Herstellung von für eine Flip-Chip-Montage geeigneten Kontakten von elektrischen Bauelementen
US5935638A (en) * 1998-08-06 1999-08-10 Dow Corning Corporation Silicon dioxide containing coating
WO2008122292A1 (en) * 2007-04-04 2008-10-16 Ecole Polytechnique Federale De Lausanne (Epfl) Diffusion-barrier coating for protection of moisture and oxygen sensitive devices
US10399256B1 (en) 2018-04-17 2019-09-03 Goodrich Corporation Sealed circuit card assembly

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JPS63213347A (ja) * 1987-02-27 1988-09-06 Mitsubishi Electric Corp 半導体装置
US4849296A (en) * 1987-12-28 1989-07-18 Dow Corning Corporation Multilayer ceramic coatings from metal oxides and hydrogen silsesquioxane resin ceramified in ammonia
US4888226A (en) * 1988-08-08 1989-12-19 American Telephone And Telegraph Company Silicone gel electronic device encapsulant
CA2027031A1 (en) * 1989-10-18 1991-04-19 Loren A. Haluska Hermetic substrate coatings in an inert gas atmosphere
US5136364A (en) * 1991-06-12 1992-08-04 National Semiconductor Corporation Semiconductor die sealing

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DE69311774D1 (de) 1997-07-31
JPH06177185A (ja) 1994-06-24
KR100287487B1 (ko) 2001-04-16
CA2104487A1 (en) 1994-03-01
EP0590780B1 (en) 1997-06-25
EP0590780A1 (en) 1994-04-06
KR940004761A (ko) 1994-03-15
TW232094B (enrdf_load_stackoverflow) 1994-10-11

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