DE69310679T2 - Überstromschutzschaltung für einen Leistungstransistor - Google Patents

Überstromschutzschaltung für einen Leistungstransistor

Info

Publication number
DE69310679T2
DE69310679T2 DE69310679T DE69310679T DE69310679T2 DE 69310679 T2 DE69310679 T2 DE 69310679T2 DE 69310679 T DE69310679 T DE 69310679T DE 69310679 T DE69310679 T DE 69310679T DE 69310679 T2 DE69310679 T2 DE 69310679T2
Authority
DE
Germany
Prior art keywords
protection circuit
power transistor
overcurrent protection
overcurrent
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69310679T
Other languages
English (en)
Other versions
DE69310679D1 (de
Inventor
Chihiro Okado
Makoto Hideshima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba FA Systems Engineering Corp
Original Assignee
Toshiba Corp
Toshiba FA Systems Engineering Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP25030892A external-priority patent/JP3325303B2/ja
Priority claimed from JP08233293A external-priority patent/JP3340786B2/ja
Application filed by Toshiba Corp, Toshiba FA Systems Engineering Corp filed Critical Toshiba Corp
Publication of DE69310679D1 publication Critical patent/DE69310679D1/de
Application granted granted Critical
Publication of DE69310679T2 publication Critical patent/DE69310679T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0828—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in composite switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/18—Modifications for indicating state of switch
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H03K17/605—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors with galvanic isolation between the control circuit and the output circuit
DE69310679T 1992-09-21 1993-09-20 Überstromschutzschaltung für einen Leistungstransistor Expired - Fee Related DE69310679T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP25030892A JP3325303B2 (ja) 1992-09-21 1992-09-21 保護機能を備えたスイッチ装置
JP08233293A JP3340786B2 (ja) 1993-04-09 1993-04-09 パワートランジスタの過電流保護回路

Publications (2)

Publication Number Publication Date
DE69310679D1 DE69310679D1 (de) 1997-06-19
DE69310679T2 true DE69310679T2 (de) 1997-09-04

Family

ID=26423359

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69310679T Expired - Fee Related DE69310679T2 (de) 1992-09-21 1993-09-20 Überstromschutzschaltung für einen Leistungstransistor

Country Status (6)

Country Link
US (1) US5485341A (de)
EP (1) EP0599455B1 (de)
KR (1) KR970003185B1 (de)
CN (1) CN1049770C (de)
AU (1) AU663972B2 (de)
DE (1) DE69310679T2 (de)

Cited By (1)

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Publication number Priority date Publication date Assignee Title
EP3048721A1 (de) * 2014-11-21 2016-07-27 Bernecker+Rainer Industrie-Elektronik Gesellschaft MbH Vorrichtung und ein verfahren zur sicheren ansteuerung eines halbleiterschalters eines wechselrichters

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DE19732959A1 (de) * 1997-07-31 1999-02-04 Fahrzeugklimaregelung Gmbh Getaktete Leistungsendstufenschaltung zur Steuerung und Regelung induktiver Lasten im PWM-Betrieb
US6307726B1 (en) * 1998-10-02 2001-10-23 Texas Instruments Incorporated System to control the output current with temperature through a controllable current limiting circuit
DE19849097A1 (de) * 1998-10-24 2000-04-27 Abb Daimler Benz Transp Verfahren zur Schaltzustandsüberwachung eines IGBT und Vorrichtung zur Durchführung des Verfahrens
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US6717785B2 (en) * 2000-03-31 2004-04-06 Denso Corporation Semiconductor switching element driving circuit
US6624994B1 (en) * 2001-11-09 2003-09-23 National Semiconductor Corporation Apparatus and method for over-current protection of an analog switch
JP2004274911A (ja) * 2003-03-10 2004-09-30 Denso Corp モータ駆動装置
US7075373B2 (en) * 2004-11-02 2006-07-11 Micrel, Inc. Overcurrent protection circuit with fast current limiting control
JP4619812B2 (ja) * 2005-02-16 2011-01-26 株式会社東芝 ゲート駆動回路
JP4504222B2 (ja) * 2005-02-21 2010-07-14 矢崎総業株式会社 過電流検出装置
JP4885706B2 (ja) * 2006-12-28 2012-02-29 富士通株式会社 表示装置の電源監視制御装置
US7817391B2 (en) * 2007-04-26 2010-10-19 Polar Semiconductor, Inc. Over-current protection device for a switched-mode power supply
JP2009071956A (ja) * 2007-09-12 2009-04-02 Mitsubishi Electric Corp ゲート駆動回路
EP2131497B1 (de) * 2008-06-04 2012-05-02 Eberspächer Controls GmbH & Co. KG Halbleiterschalter mit Kurzschlussabschaltung
US8385029B2 (en) * 2009-09-10 2013-02-26 Polar Semiconductor, Inc. Over-current protection device for a switched-mode power supply
CN102222884B (zh) * 2011-05-30 2014-05-07 东南大学 两步探测绝缘栅双极型器件短路自保护电路的保护方法
JP5585732B2 (ja) * 2011-07-07 2014-09-10 富士電機株式会社 ゲート駆動装置
JP5645782B2 (ja) * 2011-09-14 2014-12-24 三菱電機株式会社 パワーモジュール
US9025294B2 (en) 2012-02-24 2015-05-05 Hamilton Sundstrand Corporation System and method for controlling solid state circuit breakers
US8854087B2 (en) * 2012-09-28 2014-10-07 Infineon Technologies Austria Ag Electronic circuit with a reverse conducting transistor device
CN103973277B (zh) 2013-02-05 2017-06-09 通用电气公司 绝缘栅双极型晶体管的短路保护电路和方法
CN105027441B (zh) 2013-04-08 2018-10-23 富士电机株式会社 功率器件的驱动电路
AU2013205395B1 (en) * 2013-04-23 2014-01-16 Robert Bosch (Australia) Pty Ltd Method of constraining a safe operating area locus for a power semiconductor device
CN105403827B (zh) * 2014-09-12 2018-03-09 康舒科技股份有限公司 功率开关的异常检测装置
KR101696977B1 (ko) * 2014-10-08 2017-01-16 주식회사 엘지화학 절연 스위치 제어 장치 및 방법
CN104300511B (zh) * 2014-10-16 2017-04-12 浙江大学 一种igbt短路保护自适应优化单元及方法
JP6610154B2 (ja) * 2015-10-15 2019-11-27 Ｔｄｋ株式会社 スイッチ駆動装置およびスイッチ駆動方法
CA3012881C (en) * 2016-03-11 2023-01-24 Karl Dungs Gmbh & Co. Kg Valve actuator
CN105977939B (zh) 2016-06-17 2018-10-02 阳光电源股份有限公司 一种直流源保护装置与方法
JP2018093684A (ja) * 2016-12-07 2018-06-14 ルネサスエレクトロニクス株式会社 半導体装置および電力変換装置
CN110231506B (zh) * 2018-03-05 2022-02-15 日立安斯泰莫汽车系统(苏州)有限公司 电流检测回路及具备该电流检测回路的废气再循环控制回路
JP7200522B2 (ja) * 2018-07-12 2023-01-10 株式会社デンソー ゲート駆動回路
CN109756116B (zh) * 2019-01-30 2024-03-01 上海艾为电子技术股份有限公司 升压芯片及其短路保护电路
CN110377991B (zh) * 2019-07-09 2022-09-27 合肥工业大学 一种绝缘栅双极型晶体管igbt结温在线预测方法
CN111273073B (zh) * 2020-03-31 2022-05-20 吉林华微电子股份有限公司 Igbt芯片及半导体功率模块
CN111446706B (zh) * 2020-04-14 2022-11-08 合肥联宝信息技术有限公司 一种电源保护方法及装置
CN111490528B (zh) * 2020-04-23 2022-06-07 国电南瑞科技股份有限公司 一种适用于宽禁带功率器件的过流保护装置
CN114204924A (zh) * 2020-09-17 2022-03-18 圣邦微电子（北京）股份有限公司 功率开关管的保护电路和负载开关电路
CN112542941B (zh) * 2020-11-27 2022-05-06 重庆长安新能源汽车科技有限公司 一种电机控制器及其电流调节方法
CN112491012B (zh) * 2021-02-03 2021-04-16 四川蕊源集成电路科技有限公司 一种限流双保护电路及电路的限流双保护方法
CN113612209B (zh) * 2021-07-20 2022-07-12 Tcl华星光电技术有限公司 限流电路
CN114389232B (zh) * 2022-01-18 2023-08-11 中国电子科技集团公司第二十四研究所 一种用于多路复用器的断电保护电路
CN114825300B (zh) * 2022-06-27 2022-10-04 深圳市芯卓微科技有限公司 限流延时电路和限流延时芯片
CN116660715B (zh) * 2023-07-31 2023-10-20 采埃孚汽车科技(张家港)有限公司 电动助力转向系统的驱动晶体管的老化检测系统和方法

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3048721A1 (de) * 2014-11-21 2016-07-27 Bernecker+Rainer Industrie-Elektronik Gesellschaft MbH Vorrichtung und ein verfahren zur sicheren ansteuerung eines halbleiterschalters eines wechselrichters
US9906163B2 (en) 2014-11-21 2018-02-27 B&R Industrial Automation GmbH Device and method for safe control of a semiconductor switch of an inverter
US10110144B2 (en) 2014-11-21 2018-10-23 B&R Industrial Automation GmbH Device and method for safe control of a semiconductor switch of an inverter
EP3048721B1 (de) 2014-11-21 2021-06-30 B&R Industrial Automation GmbH Vorrichtung und ein verfahren zur sicheren ansteuerung eines halbleiterschalters eines wechselrichters

Also Published As

Publication number Publication date
CN1049770C (zh) 2000-02-23
AU4749093A (en) 1994-04-14
DE69310679D1 (de) 1997-06-19
EP0599455B1 (de) 1997-05-14
US5485341A (en) 1996-01-16
KR970003185B1 (ko) 1997-03-14
CN1089043A (zh) 1994-07-06
AU663972B2 (en) 1995-10-26
EP0599455A3 (de) 1994-11-23
EP0599455A2 (de) 1994-06-01

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee