DE69306617T2 - Monolithisches und kohärentes 2-D Halbleiterlaser-Array - Google Patents

Monolithisches und kohärentes 2-D Halbleiterlaser-Array

Info

Publication number
DE69306617T2
DE69306617T2 DE69306617T DE69306617T DE69306617T2 DE 69306617 T2 DE69306617 T2 DE 69306617T2 DE 69306617 T DE69306617 T DE 69306617T DE 69306617 T DE69306617 T DE 69306617T DE 69306617 T2 DE69306617 T2 DE 69306617T2
Authority
DE
Germany
Prior art keywords
coherent
monolithic
semiconductor laser
laser array
array
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69306617T
Other languages
English (en)
Other versions
DE69306617D1 (de
Inventor
Michael Jansen
Dan Botez
Luke J Mawst
Thomas J Roth
Jane J Yang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Northrop Grumman Corp
Original Assignee
TRW Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TRW Inc filed Critical TRW Inc
Publication of DE69306617D1 publication Critical patent/DE69306617D1/de
Application granted granted Critical
Publication of DE69306617T2 publication Critical patent/DE69306617T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4006—Injection locking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4068—Edge-emitting structures with lateral coupling by axially offset or by merging waveguides, e.g. Y-couplers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE69306617T 1992-03-12 1993-01-13 Monolithisches und kohärentes 2-D Halbleiterlaser-Array Expired - Fee Related DE69306617T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/849,911 US5276700A (en) 1992-03-12 1992-03-12 2-D monolithic coherent semiconductor laser array

Publications (2)

Publication Number Publication Date
DE69306617D1 DE69306617D1 (de) 1997-01-30
DE69306617T2 true DE69306617T2 (de) 1997-04-17

Family

ID=25306818

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69306617T Expired - Fee Related DE69306617T2 (de) 1992-03-12 1993-01-13 Monolithisches und kohärentes 2-D Halbleiterlaser-Array

Country Status (4)

Country Link
US (1) US5276700A (de)
EP (1) EP0560474B1 (de)
JP (1) JPH0810782B2 (de)
DE (1) DE69306617T2 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2914833B2 (ja) * 1992-09-14 1999-07-05 シャープ株式会社 半導体レーザ
US5349602A (en) * 1993-03-15 1994-09-20 Sdl, Inc. Broad-area MOPA device with leaky waveguide beam expander
US5539759A (en) * 1994-10-04 1996-07-23 Board Of Trustees Of The Leland Stanford Junior University Single mode laser with a passive antiguide region
US5657157A (en) * 1995-06-23 1997-08-12 Sdl, Inc. Semiconductor optical amplifying media with reduced self-focusing
US7286585B2 (en) * 1998-12-21 2007-10-23 Finisar Corporation Low temperature grown layers with migration enhanced epitaxy adjacent to an InGaAsN(Sb) based active region
US6885686B2 (en) * 2002-01-18 2005-04-26 Wisconsin Alumni Research Foundation High coherent power, two-dimensional surface-emitting semiconductor diode array laser
US7457340B2 (en) * 2002-01-18 2008-11-25 Wisconsin Alumni Research Foundation High coherent power, two-dimensional surface-emitting semiconductor diode array laser
CN101432936B (zh) * 2004-10-01 2011-02-02 菲尼萨公司 具有多顶侧接触的垂直腔面发射激光器
US7860137B2 (en) * 2004-10-01 2010-12-28 Finisar Corporation Vertical cavity surface emitting laser with undoped top mirror
US7408966B2 (en) * 2006-08-18 2008-08-05 Wisconsin Alumni Research Foundation Intersubband quantum box stack lasers

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3411314A1 (de) * 1984-03-27 1985-10-03 Siemens AG, 1000 Berlin und 8000 München Laserdioden-array
US4860298A (en) * 1988-04-12 1989-08-22 Dan Botez Phased-locked array of semiconductor lasers using closely spaced antiguides
JPS63260187A (ja) * 1987-04-17 1988-10-27 Oki Electric Ind Co Ltd 半導体レ−ザアレイ
JPH01175280A (ja) * 1987-12-29 1989-07-11 Sharp Corp 半導体レーザアレイ装置
US5025451A (en) * 1989-10-20 1991-06-18 Trw Inc. Two-dimensional integrated laser array
US5063570A (en) * 1990-10-29 1991-11-05 Trw Inc. Semiconductor laser arrays using leaky wave interarray coupling
US5101413A (en) * 1991-05-10 1992-03-31 Trw Inc. Large-aperture light sources using resonant leaky-wave coupling

Also Published As

Publication number Publication date
EP0560474A3 (de) 1994-01-05
JPH0810782B2 (ja) 1996-01-31
US5276700A (en) 1994-01-04
JPH0685404A (ja) 1994-03-25
EP0560474B1 (de) 1996-12-18
DE69306617D1 (de) 1997-01-30
EP0560474A2 (de) 1993-09-15

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: NORTHROP GRUMMAN CORP. (N.D.GES.D.STAATES DELAWARE

8339 Ceased/non-payment of the annual fee