DE69232257D1 - Durch Verarmung kontrollierte Isolationsstufe - Google Patents
Durch Verarmung kontrollierte IsolationsstufeInfo
- Publication number
- DE69232257D1 DE69232257D1 DE69232257T DE69232257T DE69232257D1 DE 69232257 D1 DE69232257 D1 DE 69232257D1 DE 69232257 T DE69232257 T DE 69232257T DE 69232257 T DE69232257 T DE 69232257T DE 69232257 D1 DE69232257 D1 DE 69232257D1
- Authority
- DE
- Germany
- Prior art keywords
- depletion
- insulation level
- level controlled
- controlled
- insulation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000009413 insulation Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0288—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using passive elements as protective elements, e.g. resistors, capacitors, inductors, spark-gaps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0259—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Element Separation (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US76773791A | 1991-09-30 | 1991-09-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69232257D1 true DE69232257D1 (de) | 2002-01-17 |
DE69232257T2 DE69232257T2 (de) | 2002-08-08 |
Family
ID=25080405
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69232257T Expired - Fee Related DE69232257T2 (de) | 1991-09-30 | 1992-09-24 | Durch Verarmung kontrollierte Isolationsstufe |
Country Status (4)
Country | Link |
---|---|
US (2) | US5925922A (de) |
EP (1) | EP0535536B1 (de) |
JP (1) | JPH06196634A (de) |
DE (1) | DE69232257T2 (de) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11330385A (ja) * | 1998-05-20 | 1999-11-30 | Mitsumi Electric Co Ltd | Cmosデバイス |
US6885275B1 (en) | 1998-11-12 | 2005-04-26 | Broadcom Corporation | Multi-track integrated spiral inductor |
US6985035B1 (en) | 1998-11-12 | 2006-01-10 | Broadcom Corporation | System and method for linearizing a CMOS differential pair |
US7276970B2 (en) | 1998-11-12 | 2007-10-02 | Broadcom Corporation | System and method for linearizing a CMOS differential pair |
US6525609B1 (en) | 1998-11-12 | 2003-02-25 | Broadcom Corporation | Large gain range, high linearity, low noise MOS VGA |
US6445039B1 (en) | 1998-11-12 | 2002-09-03 | Broadcom Corporation | System and method for ESD Protection |
US7687858B2 (en) | 1999-01-15 | 2010-03-30 | Broadcom Corporation | System and method for ESD protection |
AU3209000A (en) * | 1999-01-15 | 2000-08-01 | Broadcom Corporation | System and method for esd protection |
US8405152B2 (en) | 1999-01-15 | 2013-03-26 | Broadcom Corporation | System and method for ESD protection |
US6222237B1 (en) * | 1999-05-21 | 2001-04-24 | United Microelectronics Corp. | Structure of electrostatic discharge protection device |
WO2000072446A1 (en) | 1999-05-26 | 2000-11-30 | Broadcom Corporation | Integrated vco |
US7696823B2 (en) | 1999-05-26 | 2010-04-13 | Broadcom Corporation | System and method for linearizing a CMOS differential pair |
US6365940B1 (en) * | 1999-12-21 | 2002-04-02 | Texas Instruments Incorporated | High voltage trigger remote-cathode SCR |
EP1146560B1 (de) * | 2000-04-12 | 2006-12-06 | Infineon Technologies AG | ESD-Latch-up-Schutzschaltung für eine integrierte Schaltung |
JP4213329B2 (ja) * | 2000-06-15 | 2009-01-21 | 三菱電機株式会社 | 限流装置 |
US6455896B1 (en) * | 2001-04-25 | 2002-09-24 | Macronix International Co., Ltd. | Protection circuit for a memory array |
US6690082B2 (en) * | 2001-09-28 | 2004-02-10 | Agere Systems Inc. | High dopant concentration diffused resistor and method of manufacture therefor |
DE10209069B4 (de) * | 2002-02-28 | 2008-12-04 | IHP GmbH - Innovations for High Performance Microelectronics/ Institut für innovative Mikroelektronik GmbH | Spannungsbegrenzungselement für hochintegrierte Schaltungen |
US20040105202A1 (en) * | 2002-12-03 | 2004-06-03 | Industrial Technology Research Institute | Electrostatic discharge protection device and method using depletion switch |
AU2003901914A0 (en) * | 2003-04-22 | 2003-05-08 | Quantum Precision Instruments Pty Ltd | Quantum tunnelling transducer device |
US7169661B2 (en) * | 2004-04-12 | 2007-01-30 | System General Corp. | Process of fabricating high resistance CMOS resistor |
US7439592B2 (en) | 2004-12-13 | 2008-10-21 | Broadcom Corporation | ESD protection for high voltage applications |
US7505238B2 (en) | 2005-01-07 | 2009-03-17 | Agnes Neves Woo | ESD configuration for low parasitic capacitance I/O |
US20080061374A1 (en) * | 2006-09-07 | 2008-03-13 | System General Corporation | Semiconductor resistor and semiconductor process of making the same |
US20110032648A1 (en) * | 2008-04-09 | 2011-02-10 | Nxp B.V. | Esd protection |
US8563336B2 (en) | 2008-12-23 | 2013-10-22 | International Business Machines Corporation | Method for forming thin film resistor and terminal bond pad simultaneously |
US9355971B1 (en) | 2015-06-23 | 2016-05-31 | Alpha And Omega Semiconductor Incorporated | EOS protection for integrated circuits |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5667693A (en) * | 1979-11-05 | 1981-06-06 | Sanshin Ind Co Ltd | Water jet propeller for ship |
JPS5667963A (en) * | 1979-11-08 | 1981-06-08 | Mitsubishi Electric Corp | Gate protection circuit of mos type field effect transistor |
JPS59218764A (ja) * | 1983-05-27 | 1984-12-10 | Hitachi Ltd | 半導体集積回路装置 |
JPS59228751A (ja) * | 1983-06-09 | 1984-12-22 | Seiko Instr & Electronics Ltd | 半導体集積回路 |
JPS60123052A (ja) * | 1983-12-07 | 1985-07-01 | Hitachi Ltd | 半導体装置 |
JPS6144454A (ja) * | 1984-08-09 | 1986-03-04 | Fujitsu Ltd | 半導体装置 |
JPS62101067A (ja) * | 1985-10-28 | 1987-05-11 | Nec Corp | 入力保護装置 |
US4821096A (en) * | 1985-12-23 | 1989-04-11 | Intel Corporation | Excess energy protection device |
US5012317A (en) * | 1986-04-11 | 1991-04-30 | Texas Instruments Incorporated | Electrostatic discharge protection circuit |
US5019888A (en) * | 1987-07-23 | 1991-05-28 | Texas Instruments Incorporated | Circuit to improve electrostatic discharge protection |
JPH07105446B2 (ja) * | 1988-01-11 | 1995-11-13 | 株式会社東芝 | Mos型半導体装置の入力保護回路 |
US4939616A (en) * | 1988-11-01 | 1990-07-03 | Texas Instruments Incorporated | Circuit structure with enhanced electrostatic discharge protection |
US5270565A (en) * | 1989-05-12 | 1993-12-14 | Western Digital Corporation | Electro-static discharge protection circuit with bimodal resistance characteristics |
GB8911360D0 (en) * | 1989-05-17 | 1989-07-05 | Sarnoff David Res Center | Electronic charge protection devices |
KR960002094B1 (ko) * | 1990-11-30 | 1996-02-10 | 가부시키가이샤 도시바 | 입력보호회로를 갖춘 반도체장치 |
-
1992
- 1992-09-24 EP EP92116375A patent/EP0535536B1/de not_active Expired - Lifetime
- 1992-09-24 DE DE69232257T patent/DE69232257T2/de not_active Expired - Fee Related
- 1992-09-30 JP JP4262338A patent/JPH06196634A/ja active Pending
-
1993
- 1993-08-19 US US08/109,203 patent/US5925922A/en not_active Expired - Lifetime
-
1998
- 1998-10-29 US US09/182,361 patent/US5977596A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0535536A1 (de) | 1993-04-07 |
EP0535536B1 (de) | 2001-12-05 |
US5925922A (en) | 1999-07-20 |
US5977596A (en) | 1999-11-02 |
JPH06196634A (ja) | 1994-07-15 |
DE69232257T2 (de) | 2002-08-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: TEXAS INSTRUMENTS INCORPORATED, DALLAS, TEX., US |
|
8339 | Ceased/non-payment of the annual fee |