DE69231494D1 - Vorrichtung für ESD-Schutz - Google Patents
Vorrichtung für ESD-SchutzInfo
- Publication number
- DE69231494D1 DE69231494D1 DE69231494T DE69231494T DE69231494D1 DE 69231494 D1 DE69231494 D1 DE 69231494D1 DE 69231494 T DE69231494 T DE 69231494T DE 69231494 T DE69231494 T DE 69231494T DE 69231494 D1 DE69231494 D1 DE 69231494D1
- Authority
- DE
- Germany
- Prior art keywords
- protection device
- esd protection
- esd
- protection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
- H01L27/027—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements specially adapted to provide an electrical current path other than the field effect induced current path
- H01L27/0274—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements specially adapted to provide an electrical current path other than the field effect induced current path involving a parasitic bipolar transistor triggered by the electrical biasing of the gate electrode of the field effect transistor, e.g. gate coupled transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
- H01F1/01—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
- H01F1/03—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity
- H01F1/0302—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity characterised by unspecified or heterogeneous hardness or specially adapted for magnetic hardness transitions
- H01F1/0306—Metals or alloys, e.g. LAVES phase alloys of the MgCu2-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US81506991A | 1991-12-27 | 1991-12-27 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69231494D1 true DE69231494D1 (de) | 2000-11-09 |
DE69231494T2 DE69231494T2 (de) | 2001-05-10 |
Family
ID=25216765
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE1992631494 Expired - Fee Related DE69231494T2 (de) | 1991-12-27 | 1992-12-22 | Vorrichtung für ESD-Schutz |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP0549320B1 (de) |
JP (1) | JPH05347409A (de) |
DE (1) | DE69231494T2 (de) |
TW (1) | TW217467B (de) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA2115477A1 (en) * | 1994-02-11 | 1995-08-12 | Jonathan H. Orchard-Webb | Esd input protection arrangement |
FR2723800B1 (fr) * | 1994-08-19 | 1997-01-03 | Thomson Csf Semiconducteurs | Circuit de protection contre les decharges electrostatiques |
FR2738682B1 (fr) * | 1995-09-11 | 1997-11-21 | Sgs Thomson Microelectronics | Dispositif de protection contre des surtensions |
KR100190386B1 (ko) * | 1995-09-28 | 1999-06-01 | 김영환 | 정전방전 방지회로용 트랜지스터 |
JP3169844B2 (ja) * | 1996-12-11 | 2001-05-28 | 日本電気株式会社 | 半導体装置 |
GB2336241B (en) * | 1998-01-15 | 2000-06-14 | United Microelectronics Corp | Substrate-triggering electrostatic dicharge protection circuit for deep-submicron integrated circuits |
TW363261B (en) * | 1998-01-15 | 1999-07-01 | United Microelectronics Corp | Protection circuit for substrate triggering electrostatic discharge |
NL1008963C2 (nl) * | 1998-04-22 | 1999-10-25 | United Microelectronics Corp | Beveiligingsschakeling tegen elektrostatische ontlading met substraat-triggering voor diep-submicron geïntegreerde schakelingen. |
US6411480B1 (en) | 1999-03-01 | 2002-06-25 | International Business Machines Corporation | Substrate pumped ESD network with trench structure |
JP2001308282A (ja) | 2000-04-19 | 2001-11-02 | Nec Corp | 半導体装置 |
DE102004004585A1 (de) * | 2004-01-29 | 2005-08-18 | Infineon Technologies Ag | Integrierter Widerstand und Herstellungsverfahren |
JP5486962B2 (ja) * | 2009-04-28 | 2014-05-07 | 株式会社メガチップス | 半導体集積回路 |
JP5404343B2 (ja) * | 2009-11-25 | 2014-01-29 | シャープ株式会社 | 静電気放電保護回路 |
CN101834182B (zh) * | 2010-03-23 | 2011-12-21 | 浙江大学 | 一种动态栅极电阻调制的栅极耦合nmos管 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3746946A (en) * | 1972-10-02 | 1973-07-17 | Motorola Inc | Insulated gate field-effect transistor input protection circuit |
JPS57109375A (en) * | 1980-12-26 | 1982-07-07 | Fujitsu Ltd | Mis type transistor protection circuit |
US4605980A (en) * | 1984-03-02 | 1986-08-12 | Zilog, Inc. | Integrated circuit high voltage protection |
JPS6331157A (ja) * | 1986-07-24 | 1988-02-09 | Fujitsu Ltd | C−mos lsiの保護回路 |
US4855620A (en) * | 1987-11-18 | 1989-08-08 | Texas Instruments Incorporated | Output buffer with improved ESD protection |
US4829350A (en) * | 1988-05-05 | 1989-05-09 | National Semiconductor Corporation | Electrostatic discharge integrated circuit protection |
DE3907523A1 (de) * | 1989-03-08 | 1990-09-20 | Siemens Ag | Schutzschaltung gegen ueberspannungen fuer mos-bauelemente |
FR2652449A1 (fr) * | 1989-09-22 | 1991-03-29 | Sgs Thomson Microelectronics | Dispositif de protection electrostatique pour broche de circuit integre. |
-
1992
- 1992-12-22 DE DE1992631494 patent/DE69231494T2/de not_active Expired - Fee Related
- 1992-12-22 EP EP19920311688 patent/EP0549320B1/de not_active Expired - Lifetime
- 1992-12-28 JP JP4362054A patent/JPH05347409A/ja active Pending
-
1993
- 1993-02-24 TW TW82101299A patent/TW217467B/zh active
Also Published As
Publication number | Publication date |
---|---|
EP0549320A1 (de) | 1993-06-30 |
JPH05347409A (ja) | 1993-12-27 |
TW217467B (de) | 1993-12-11 |
EP0549320B1 (de) | 2000-10-04 |
DE69231494T2 (de) | 2001-05-10 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |