DE69223708D1 - Röntgenlithographische Maske und Verwendung zur Herstellung einer Halbleitervorrichtung - Google Patents

Röntgenlithographische Maske und Verwendung zur Herstellung einer Halbleitervorrichtung

Info

Publication number
DE69223708D1
DE69223708D1 DE69223708T DE69223708T DE69223708D1 DE 69223708 D1 DE69223708 D1 DE 69223708D1 DE 69223708 T DE69223708 T DE 69223708T DE 69223708 T DE69223708 T DE 69223708T DE 69223708 D1 DE69223708 D1 DE 69223708D1
Authority
DE
Germany
Prior art keywords
manufacturing
semiconductor device
lithographic mask
ray lithographic
ray
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69223708T
Other languages
English (en)
Other versions
DE69223708T2 (de
Inventor
Nobushige Korenaga
Hiroshi Maehara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE69223708D1 publication Critical patent/DE69223708D1/de
Application granted granted Critical
Publication of DE69223708T2 publication Critical patent/DE69223708T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
DE69223708T 1991-09-10 1992-08-28 Röntgenlithographische Maske und Verwendung zur Herstellung einer Halbleitervorrichtung Expired - Fee Related DE69223708T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23032891A JPH0567561A (ja) 1991-09-10 1991-09-10 Ｘ線マスク基板とその製造方法およびｘ線マスク

Publications (2)

Publication Number Publication Date
DE69223708D1 true DE69223708D1 (de) 1998-02-05
DE69223708T2 DE69223708T2 (de) 1998-04-23

Family

ID=16906116

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69223708T Expired - Fee Related DE69223708T2 (de) 1991-09-10 1992-08-28 Röntgenlithographische Maske und Verwendung zur Herstellung einer Halbleitervorrichtung

Country Status (6)

Country Link
US (1) US5224139A (de)
EP (1) EP0532211B1 (de)
JP (1) JPH0567561A (de)
CA (1) CA2077359C (de)
DE (1) DE69223708T2 (de)
SG (1) SG76477A1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69229987T2 (de) * 1991-11-15 2000-04-20 Canon Kk Röntgenstrahlmaskenstruktur und -belichtungsverfahren sowie damit hergestelltes Halbleiterbauelement und Herstellungsverfahren für die Röntgenstrahlmaskenstruktur
DE69505448T2 (de) * 1994-03-15 1999-04-22 Canon Kk Maske und Maskenträger
US5509041A (en) * 1994-06-30 1996-04-16 Motorola, Inc. X-ray lithography method for irradiating an object to form a pattern thereon
KR0170594B1 (ko) * 1996-05-25 1999-03-20 양승택 마스크용 글래스 링 구조
JP3332872B2 (ja) * 1998-10-27 2002-10-07 キヤノン株式会社 露光方法
JP4735272B2 (ja) * 2006-01-13 2011-07-27 日本精工株式会社 露光装置
KR101041138B1 (ko) * 2009-03-03 2011-06-13 삼성모바일디스플레이주식회사 증착용 마스크

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0244496B1 (de) * 1986-05-06 1991-01-16 Ibm Deutschland Gmbh Maske für die Ionen-, Elektronen- oder Röntgenstrahllithographie und Verfahren zur ihrer Herstellung
DE3703582C1 (de) * 1987-02-06 1988-04-07 Heidenhain Gmbh Dr Johannes Bestrahlungsmaske zur lithographischen Erzeugung von Mustern
CN1033345C (zh) * 1989-03-02 1996-11-20 东芝株式会社 荫罩的图形印相版
JP2911954B2 (ja) * 1990-04-09 1999-06-28 キヤノン株式会社 Ｘ線マスク構造体

Also Published As

Publication number Publication date
EP0532211B1 (de) 1997-12-29
EP0532211A1 (de) 1993-03-17
SG76477A1 (en) 2000-11-21
JPH0567561A (ja) 1993-03-19
DE69223708T2 (de) 1998-04-23
CA2077359C (en) 1997-02-04
CA2077359A1 (en) 1993-03-11
US5224139A (en) 1993-06-29

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee