DE69221152D1 - Vertikale wärmebehandlungsvorrichtung und wärmeisolationsmaterial - Google Patents

Vertikale wärmebehandlungsvorrichtung und wärmeisolationsmaterial

Info

Publication number
DE69221152D1
DE69221152D1 DE69221152T DE69221152T DE69221152D1 DE 69221152 D1 DE69221152 D1 DE 69221152D1 DE 69221152 T DE69221152 T DE 69221152T DE 69221152 T DE69221152 T DE 69221152T DE 69221152 D1 DE69221152 D1 DE 69221152D1
Authority
DE
Germany
Prior art keywords
treatment device
insulation material
heat treatment
heat insulation
vertical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69221152T
Other languages
English (en)
Other versions
DE69221152T2 (de
Inventor
Shinichi Okoshi
Hiroyuki Kimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Quartz Products Co Ltd
Original Assignee
Shin Etsu Quartz Products Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Quartz Products Co Ltd filed Critical Shin Etsu Quartz Products Co Ltd
Publication of DE69221152D1 publication Critical patent/DE69221152D1/de
Application granted granted Critical
Publication of DE69221152T2 publication Critical patent/DE69221152T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/10—Reaction chambers; Selection of materials therefor
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B17/00—Furnaces of a kind not covered by any preceding group
    • F27B17/0016—Chamber type furnaces
    • F27B17/0025—Especially adapted for treating semiconductor wafers
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D7/00—Forming, maintaining, or circulating atmospheres in heating chambers
    • F27D7/02—Supplying steam, vapour, gases, or liquids

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Glass Compositions (AREA)
  • Chemical Vapour Deposition (AREA)
  • Furnace Charging Or Discharging (AREA)
DE69221152T 1992-05-15 1992-05-15 Vertikale wärmebehandlungsvorrichtung und wärmeisolationsmaterial Expired - Fee Related DE69221152T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP1992/000627 WO1993023713A1 (en) 1992-05-15 1992-05-15 Vertical heat treatment apparatus and heat insulating material

Publications (2)

Publication Number Publication Date
DE69221152D1 true DE69221152D1 (de) 1997-09-04
DE69221152T2 DE69221152T2 (de) 1998-02-19

Family

ID=14042343

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69221152T Expired - Fee Related DE69221152T2 (de) 1992-05-15 1992-05-15 Vertikale wärmebehandlungsvorrichtung und wärmeisolationsmaterial

Country Status (6)

Country Link
US (2) US5480300A (de)
EP (1) EP0603391B1 (de)
JP (1) JP2897963B2 (de)
KR (1) KR970003646B1 (de)
DE (1) DE69221152T2 (de)
WO (1) WO1993023713A1 (de)

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DE69221152T2 (de) * 1992-05-15 1998-02-19 Shinetsu Quartz Prod Vertikale wärmebehandlungsvorrichtung und wärmeisolationsmaterial
JP3473715B2 (ja) * 1994-09-30 2003-12-08 信越半導体株式会社 石英ガラス製ウェーハボート
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US5846073A (en) * 1997-03-07 1998-12-08 Semitool, Inc. Semiconductor furnace processing vessel base
KR100244484B1 (ko) * 1997-07-02 2000-02-01 김영환 반도체소자의 제조방법
US6139627A (en) * 1998-09-21 2000-10-31 The University Of Akron Transparent multi-zone crystal growth furnace and method for controlling the same
US6974766B1 (en) * 1998-10-01 2005-12-13 Applied Materials, Inc. In situ deposition of a low κ dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene application
US6635583B2 (en) * 1998-10-01 2003-10-21 Applied Materials, Inc. Silicon carbide deposition for use as a low-dielectric constant anti-reflective coating
US6821571B2 (en) * 1999-06-18 2004-11-23 Applied Materials Inc. Plasma treatment to enhance adhesion and to minimize oxidation of carbon-containing layers
US6423384B1 (en) 1999-06-25 2002-07-23 Applied Materials, Inc. HDP-CVD deposition of low dielectric constant amorphous carbon film
KR100352765B1 (ko) * 1999-12-01 2002-09-16 삼성전자 주식회사 반도체 제조용 가열장치
US6794311B2 (en) 2000-07-14 2004-09-21 Applied Materials Inc. Method and apparatus for treating low k dielectric layers to reduce diffusion
US6838393B2 (en) * 2001-12-14 2005-01-04 Applied Materials, Inc. Method for producing semiconductor including forming a layer containing at least silicon carbide and forming a second layer containing at least silicon oxygen carbide
US6890850B2 (en) * 2001-12-14 2005-05-10 Applied Materials, Inc. Method of depositing dielectric materials in damascene applications
US7091137B2 (en) * 2001-12-14 2006-08-15 Applied Materials Bi-layer approach for a hermetic low dielectric constant layer for barrier applications
US6902395B2 (en) * 2002-03-15 2005-06-07 Asm International, N.V. Multilevel pedestal for furnace
EP1540258A1 (de) * 2002-07-15 2005-06-15 Aviza Technology, Inc. VARIABLES HEIZELEMENT FüR NIEDRIGE BIS HOHE TEMPERATURBEREICHE
US7749563B2 (en) * 2002-10-07 2010-07-06 Applied Materials, Inc. Two-layer film for next generation damascene barrier application with good oxidation resistance
KR100496133B1 (ko) * 2002-11-30 2005-06-17 주식회사 테라세미콘 반도체 제조장치
US6790788B2 (en) * 2003-01-13 2004-09-14 Applied Materials Inc. Method of improving stability in low k barrier layers
SG155057A1 (en) * 2003-02-27 2009-09-30 Asahi Glass Co Ltd Outer tube made of silicon carbide and thermal treatment system for semiconductors
US7030041B2 (en) * 2004-03-15 2006-04-18 Applied Materials Inc. Adhesion improvement for low k dielectrics
US20050233555A1 (en) * 2004-04-19 2005-10-20 Nagarajan Rajagopalan Adhesion improvement for low k dielectrics to conductive materials
US7229911B2 (en) * 2004-04-19 2007-06-12 Applied Materials, Inc. Adhesion improvement for low k dielectrics to conductive materials
US20050277302A1 (en) * 2004-05-28 2005-12-15 Nguyen Son V Advanced low dielectric constant barrier layers
US7229041B2 (en) * 2004-06-30 2007-06-12 Ohio Central Steel Company Lifting lid crusher
US7288205B2 (en) * 2004-07-09 2007-10-30 Applied Materials, Inc. Hermetic low dielectric constant layer for barrier applications
DE102004053435A1 (de) * 2004-11-05 2006-05-11 Forschungszentrum Jülich GmbH Thermische Isolierung zur Reduzierung von Wärmeverlusten und Energieverbrauch bei Hochtemperaturanlagen
US7651569B2 (en) * 2006-02-28 2010-01-26 Asm International N.V. Pedestal for furnace
EP2346783A2 (de) * 2008-09-30 2011-07-27 Hemlock Semiconductor Corporation Verfahren zur bestimmung einer menge von verunreinigungen, die ein kontaminierendes material zu hochreinem silicium beiträgt, und ofen zur behandlung von hochreinem silicium
JP2012195565A (ja) * 2011-02-28 2012-10-11 Hitachi Kokusai Electric Inc 基板処理装置、基板処理方法及び半導体装置の製造方法
US20120280429A1 (en) * 2011-05-02 2012-11-08 Gt Solar, Inc. Apparatus and method for producing a multicrystalline material having large grain sizes
EP3390304B1 (de) 2015-12-18 2023-09-13 Heraeus Quarzglas GmbH & Co. KG Sprühgranulieren von siliziumdioxid bei der herstellung von quarzglas
JP6881777B2 (ja) 2015-12-18 2021-06-02 ヘレウス クワルツグラス ゲーエムベーハー ウント コンパニー カーゲー 合成石英ガラス粒の調製
JP6881776B2 (ja) 2015-12-18 2021-06-02 ヘレウス クワルツグラス ゲーエムベーハー ウント コンパニー カーゲー 不透明石英ガラス体の調製
JP7044454B2 (ja) 2015-12-18 2022-03-30 ヘレウス クワルツグラス ゲーエムベーハー ウント コンパニー カーゲー 石英ガラス調製時の中間体としての炭素ドープ二酸化ケイ素造粒体の調製
KR20180094087A (ko) 2015-12-18 2018-08-22 헤래우스 크바르츠글라스 게엠베하 ＆ 컴파니 케이지 실리카 과립으로부터 실리카 유리 제품의 제조
KR20180095622A (ko) 2015-12-18 2018-08-27 헤래우스 크바르츠글라스 게엠베하 ＆ 컴파니 케이지 내화성 금속으로 제조된 용융 도가니에서 실리카 유리 제품의 제조
US11952303B2 (en) 2015-12-18 2024-04-09 Heraeus Quarzglas Gmbh & Co. Kg Increase in silicon content in the preparation of quartz glass
US10676388B2 (en) 2015-12-18 2020-06-09 Heraeus Quarzglas Gmbh & Co. Kg Glass fibers and pre-forms made of homogeneous quartz glass
KR20180095616A (ko) 2015-12-18 2018-08-27 헤래우스 크바르츠글라스 게엠베하 ＆ 컴파니 케이지 용융 가열로에서 이슬점 조절을 이용한 실리카 유리체의 제조
TW201731782A (zh) 2015-12-18 2017-09-16 何瑞斯廓格拉斯公司 在多腔式爐中製備石英玻璃體
US10490431B2 (en) * 2017-03-10 2019-11-26 Yield Engineering Systems, Inc. Combination vacuum and over-pressure process chamber and methods related thereto
US11024523B2 (en) * 2018-09-11 2021-06-01 Asm Ip Holding B.V. Substrate processing apparatus and method
CN109853041A (zh) * 2019-01-10 2019-06-07 张忠恕 一种有效提高石英扩散炉内温度稳定性的保温桶
US11578405B2 (en) * 2019-04-23 2023-02-14 King Fahd University Of Petroleum And Minerals Apparatus for monitoring carbon nanotube growth

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JPS6366928A (ja) * 1986-09-08 1988-03-25 Toshiba Corp 熱処理装置
JPS63161612A (ja) * 1986-12-25 1988-07-05 Toshiba Ceramics Co Ltd 縦型炉
JP2559403B2 (ja) * 1987-04-15 1996-12-04 株式会社日立製作所 縦型処理装置及び処理方法
US4943235A (en) * 1987-11-27 1990-07-24 Tel Sagami Limited Heat-treating apparatus
JP2935468B2 (ja) * 1989-08-07 1999-08-16 東京エレクトロン株式会社 縦型熱処理装置
US5000682A (en) * 1990-01-22 1991-03-19 Semitherm Vertical thermal processor for semiconductor wafers
JPH05217929A (ja) * 1992-01-31 1993-08-27 Tokyo Electron Tohoku Kk 酸化拡散処理装置
DE69221152T2 (de) * 1992-05-15 1998-02-19 Shinetsu Quartz Prod Vertikale wärmebehandlungsvorrichtung und wärmeisolationsmaterial

Also Published As

Publication number Publication date
KR970003646B1 (ko) 1997-03-20
EP0603391B1 (de) 1997-07-23
EP0603391A4 (en) 1994-10-05
EP0603391A1 (de) 1994-06-29
JP2897963B2 (ja) 1999-05-31
DE69221152T2 (de) 1998-02-19
US5480300A (en) 1996-01-02
WO1993023713A1 (en) 1993-11-25
US5601428A (en) 1997-02-11

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee