DE69215914D1 - Photoelektrischer Umwandler schaltbar zwischen hochauflösenden und hochempfindlichen Modus - Google Patents

Photoelektrischer Umwandler schaltbar zwischen hochauflösenden und hochempfindlichen Modus

Info

Publication number
DE69215914D1
DE69215914D1 DE69215914T DE69215914T DE69215914D1 DE 69215914 D1 DE69215914 D1 DE 69215914D1 DE 69215914 T DE69215914 T DE 69215914T DE 69215914 T DE69215914 T DE 69215914T DE 69215914 D1 DE69215914 D1 DE 69215914D1
Authority
DE
Germany
Prior art keywords
resolution
highly sensitive
photoelectric converter
sensitive mode
switchable
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69215914T
Other languages
English (en)
Other versions
DE69215914T2 (de
Inventor
Kenji Arinaga
Nobuyuki Kajihara
Gen Sudo
Koji Fujiwara
Soichiro Hikida
Yuichiro Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE69215914D1 publication Critical patent/DE69215914D1/de
Publication of DE69215914T2 publication Critical patent/DE69215914T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0324—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIVBVI or AIIBIVCVI chalcogenide compounds, e.g. Pb Sn Te
    • H01L31/0325—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIVBVI or AIIBIVCVI chalcogenide compounds, e.g. Pb Sn Te characterised by the doping material

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
DE69215914T 1991-02-01 1992-01-29 Photoelektrischer Wandler, der auf einen hochauflösenden oder einen hochempfindlichen Modus schaltbar ist Expired - Fee Related DE69215914T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3012058A JPH04246860A (ja) 1991-02-01 1991-02-01 光電変換装置

Publications (2)

Publication Number Publication Date
DE69215914D1 true DE69215914D1 (de) 1997-01-30
DE69215914T2 DE69215914T2 (de) 1997-06-26

Family

ID=11795003

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69215914T Expired - Fee Related DE69215914T2 (de) 1991-02-01 1992-01-29 Photoelektrischer Wandler, der auf einen hochauflösenden oder einen hochempfindlichen Modus schaltbar ist

Country Status (4)

Country Link
US (1) US5196692A (de)
EP (1) EP0497326B1 (de)
JP (1) JPH04246860A (de)
DE (1) DE69215914T2 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04104216A (ja) * 1990-08-24 1992-04-06 Hitachi Koki Co Ltd 光走査装置
US6043548A (en) * 1993-04-14 2000-03-28 Yeda Research And Development Co., Ltd. Semiconductor device with stabilized junction
US5508625A (en) * 1994-06-23 1996-04-16 The Boeing Company Voltage stand off characteristics of photoconductor devices
JP2746154B2 (ja) * 1994-12-07 1998-04-28 日本電気株式会社 固体撮像素子
US5998235A (en) * 1997-06-26 1999-12-07 Lockheed Martin Corporation Method of fabrication for mercury-based quaternary alloys of infrared sensitive materials
JP2001024270A (ja) * 1999-07-06 2001-01-26 Kyocera Corp バーンイン用基板及びそれを用いたバーンイン方法
GB0218713D0 (en) * 2002-08-12 2002-09-18 Mitel Knowledge Corp Architecture and Implementation for control of context aware call processing with local feature definition
DE102005049228B4 (de) * 2005-10-14 2014-03-27 Siemens Aktiengesellschaft Detektor mit einem Array von Photodioden
JP2007165621A (ja) * 2005-12-14 2007-06-28 Toshiba Corp 光結合装置
JP4993941B2 (ja) * 2006-04-27 2012-08-08 パナソニック株式会社 半導体集積回路及びこれを備えたシステムｌｓｉ

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3703669A (en) * 1971-08-12 1972-11-21 Motorola Inc Photocurrent cross talk isolation
JPS55112081A (en) * 1979-02-21 1980-08-29 Hitachi Ltd Solid state pickup device
US4369372A (en) * 1979-06-18 1983-01-18 Canon Kabushiki Kaisha Photo electro transducer device
JPS5712571A (en) * 1980-06-27 1982-01-22 Toshiba Corp Semiconductor photodetector
JPS58148455A (ja) * 1982-02-16 1983-09-03 ゼロツクス・コ−ポレ−シヨン ポリシリコン隔離ホトダイオ−ドアレイ撮像装置
US4531055A (en) * 1983-01-05 1985-07-23 The United States Of America As Represented By The Secretary Of The Air Force Self-guarding Schottky barrier infrared detector array
JPS62122268A (ja) * 1985-11-22 1987-06-03 Fuji Photo Film Co Ltd 固体撮像素子
US4751560A (en) * 1986-02-24 1988-06-14 Santa Barbara Research Center Infrared photodiode array

Also Published As

Publication number Publication date
DE69215914T2 (de) 1997-06-26
EP0497326A1 (de) 1992-08-05
US5196692A (en) 1993-03-23
EP0497326B1 (de) 1996-12-18
JPH04246860A (ja) 1992-09-02

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee