DE69215858D1 - Junction-isoliertes, hochspannungsintegriertes MOS-Bauelement - Google Patents

Junction-isoliertes, hochspannungsintegriertes MOS-Bauelement

Info

Publication number
DE69215858D1
DE69215858D1 DE69215858T DE69215858T DE69215858D1 DE 69215858 D1 DE69215858 D1 DE 69215858D1 DE 69215858 T DE69215858 T DE 69215858T DE 69215858 T DE69215858 T DE 69215858T DE 69215858 D1 DE69215858 D1 DE 69215858D1
Authority
DE
Germany
Prior art keywords
insulated
junction
voltage integrated
integrated mos
mos component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69215858T
Other languages
English (en)
Other versions
DE69215858T2 (de
Inventor
Enrico Maria Alfons Ravanelli
Flavio Villa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
SGS Thomson Microelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGS Thomson Microelectronics SRL filed Critical SGS Thomson Microelectronics SRL
Publication of DE69215858D1 publication Critical patent/DE69215858D1/de
Application granted granted Critical
Publication of DE69215858T2 publication Critical patent/DE69215858T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/404—Multiple field plate structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
    • H01L29/7817—Lateral DMOS transistors, i.e. LDMOS transistors structurally associated with at least one other device

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
DE69215858T 1992-04-17 1992-04-17 Junction-isoliertes, hochspannungsintegriertes MOS-Bauelement Expired - Fee Related DE69215858T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP92830190A EP0565808B1 (de) 1992-04-17 1992-04-17 Junction-isoliertes, hochspannungsintegriertes MOS-Bauelement

Publications (2)

Publication Number Publication Date
DE69215858D1 true DE69215858D1 (de) 1997-01-23
DE69215858T2 DE69215858T2 (de) 1997-05-15

Family

ID=8212092

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69215858T Expired - Fee Related DE69215858T2 (de) 1992-04-17 1992-04-17 Junction-isoliertes, hochspannungsintegriertes MOS-Bauelement

Country Status (4)

Country Link
US (2) US5434445A (de)
EP (1) EP0565808B1 (de)
JP (1) JPH0669511A (de)
DE (1) DE69215858T2 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5629552A (en) * 1995-01-17 1997-05-13 Ixys Corporation Stable high voltage semiconductor device structure
DE69415987T2 (de) * 1994-11-08 1999-06-24 St Microelectronics Srl Integrierte Anordnung mit einer Struktur zum Schutz gegen hohe elektrische Felder
FR2784801B1 (fr) 1998-10-19 2000-12-22 St Microelectronics Sa Composant de puissance portant des interconnexions
FR2785090B1 (fr) 1998-10-23 2001-01-19 St Microelectronics Sa Composant de puissance portant des interconnexions
JP4587192B2 (ja) * 1999-09-20 2010-11-24 Ｏｋｉセミコンダクタ株式会社 半導体装置
JP3846796B2 (ja) * 2002-11-28 2006-11-15 三菱電機株式会社 半導体装置
EP1668703A1 (de) * 2003-09-22 2006-06-14 Koninklijke Philips Electronics N.V. Dynamische steuerung von kapazitätselementen in feldeffekt-halbleiterbauelementen
JP4368704B2 (ja) * 2004-03-12 2009-11-18 三井金属鉱業株式会社 電子部品実装用プリント配線板の電気検査方法および電気検査装置ならびにコンピュータ読み取り可能な記録媒体
US8558349B2 (en) * 2006-08-11 2013-10-15 System General Corp. Integrated circuit for a high-side transistor driver
US8866191B2 (en) * 2007-02-22 2014-10-21 Forschungsverbund Berlin E.V. HEMT semiconductor component with field plates
US7709908B2 (en) * 2007-08-10 2010-05-04 United Microelectronics Corp. High-voltage MOS transistor device
US7719076B2 (en) * 2007-08-10 2010-05-18 United Microelectronics Corp. High-voltage MOS transistor device
US8159029B2 (en) * 2008-10-22 2012-04-17 Taiwan Semiconductor Manufacturing Company, Ltd. High voltage device having reduced on-state resistance
US9236449B2 (en) * 2013-07-11 2016-01-12 Globalfoundries Inc. High voltage laterally diffused metal oxide semiconductor
US9911845B2 (en) 2015-12-10 2018-03-06 Taiwan Semiconductor Manufacturing Company, Ltd. High voltage LDMOS transistor and methods for manufacturing the same
CN107887427B (zh) * 2017-10-30 2020-05-29 济南大学 一种带有可调型场板的高压二极管
CN111383922B (zh) * 2020-03-05 2023-10-20 上海华虹宏力半导体制造有限公司 Jfet器件的制备方法、jfet器件及其版图结构

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4958210A (en) * 1976-07-06 1990-09-18 General Electric Company High voltage integrated circuits
US4358890A (en) * 1978-08-31 1982-11-16 Ibm Corporation Process for making a dual implanted drain extension for bucket brigade device tetrode structure
US4947232A (en) * 1980-03-22 1990-08-07 Sharp Kabushiki Kaisha High voltage MOS transistor
JPS56169368A (en) * 1980-05-30 1981-12-26 Sharp Corp High withstand voltage mos field effect semiconductor device
US4419812A (en) * 1982-08-23 1983-12-13 Ncr Corporation Method of fabricating an integrated circuit voltage multiplier containing a parallel plate capacitor
FR2593630B1 (fr) * 1986-01-27 1988-03-18 Maurice Francois Ecran d'affichage a matrice active a resistance de drain et procedes de fabrication de cet ecran
DE3740302A1 (de) * 1987-11-27 1989-06-08 Telefunken Electronic Gmbh Integrierte schaltungsanordnung
US5204545A (en) * 1989-11-22 1993-04-20 Mitsubishi Denki Kabushiki Kaisha Structure for preventing field concentration in semiconductor device and method of forming the same
JP2556175B2 (ja) * 1990-06-12 1996-11-20 三菱電機株式会社 半導体装置における電界集中防止構造

Also Published As

Publication number Publication date
US5496761A (en) 1996-03-05
EP0565808A1 (de) 1993-10-20
US5434445A (en) 1995-07-18
DE69215858T2 (de) 1997-05-15
JPH0669511A (ja) 1994-03-11
EP0565808B1 (de) 1996-12-11

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee