DE69202801T2 - Vorrichtung zur Herstellung von supraleitenden Oxydschichten durch MOCVD-Verfahren. - Google Patents

Vorrichtung zur Herstellung von supraleitenden Oxydschichten durch MOCVD-Verfahren.

Info

Publication number
DE69202801T2
DE69202801T2 DE69202801T DE69202801T DE69202801T2 DE 69202801 T2 DE69202801 T2 DE 69202801T2 DE 69202801 T DE69202801 T DE 69202801T DE 69202801 T DE69202801 T DE 69202801T DE 69202801 T2 DE69202801 T2 DE 69202801T2
Authority
DE
Germany
Prior art keywords
oxide layers
mocvd process
superconducting oxide
producing superconducting
producing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69202801T
Other languages
English (en)
Other versions
DE69202801D1 (de
Inventor
Kazutoshi Higashiyama
Takahisa Ushida
Izumi Hirabayashi
Shoji Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Superconductivity Technology Center
Hitachi Ltd
Niterra Co Ltd
Original Assignee
International Superconductivity Technology Center
Hitachi Ltd
NGK Spark Plug Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Superconductivity Technology Center, Hitachi Ltd, NGK Spark Plug Co Ltd filed Critical International Superconductivity Technology Center
Publication of DE69202801D1 publication Critical patent/DE69202801D1/de
Application granted granted Critical
Publication of DE69202801T2 publication Critical patent/DE69202801T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/408—Oxides of copper or solid solutions thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
    • Y10S505/73—Vacuum treating or coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
    • Y10S505/734—From organometallic precursors, e.g. acetylacetonates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/786—Manufacturing system or apparatus for making high temperature, i.e. tc greater than 30 k superconductor product, device, article or stock, i.e. which system or apparatus does not itself contain a superconducting component

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE69202801T 1991-03-26 1992-03-25 Vorrichtung zur Herstellung von supraleitenden Oxydschichten durch MOCVD-Verfahren. Expired - Fee Related DE69202801T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3061454A JPH04295089A (ja) 1991-03-26 1991-03-26 酸化物超電導膜製造装置

Publications (2)

Publication Number Publication Date
DE69202801D1 DE69202801D1 (de) 1995-07-13
DE69202801T2 true DE69202801T2 (de) 1995-11-09

Family

ID=13171507

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69202801T Expired - Fee Related DE69202801T2 (de) 1991-03-26 1992-03-25 Vorrichtung zur Herstellung von supraleitenden Oxydschichten durch MOCVD-Verfahren.

Country Status (4)

Country Link
US (1) US5190913A (de)
EP (1) EP0506012B1 (de)
JP (1) JPH04295089A (de)
DE (1) DE69202801T2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020109145A1 (de) * 2018-11-26 2020-06-04 Khs Corpoplast Gmbh Vorrichtung und verfahren zur plasmabehandlung von behältern

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3124376B2 (ja) * 1992-06-17 2001-01-15 株式会社東芝 化合物半導体の気相成長装置
JPH0610144A (ja) * 1992-06-29 1994-01-18 Matsushita Electric Ind Co Ltd 低蒸気圧材料供給装置
US5534069A (en) * 1992-07-23 1996-07-09 Canon Kabushiki Kaisha Method of treating active material
JP2906006B2 (ja) * 1992-10-15 1999-06-14 東京エレクトロン株式会社 処理方法及びその装置
JPH06295862A (ja) * 1992-11-20 1994-10-21 Mitsubishi Electric Corp 化合物半導体製造装置及び有機金属材料容器
FR2698288B1 (fr) * 1992-11-20 1994-12-23 Lair Liquide Procédé d'alimentation gazeuse notamment en diborane et silane.
US5427625A (en) * 1992-12-18 1995-06-27 Tokyo Electron Kabushiki Kaisha Method for cleaning heat treatment processing apparatus
US5455014A (en) * 1993-07-20 1995-10-03 Hughes Aircraft Company Liquid deposition source gas delivery system
US5431734A (en) * 1994-04-28 1995-07-11 International Business Machines Corporation Aluminum oxide low pressure chemical vapor deposition (LPCVD) system-fourier transform infrared (FTIR) source chemical control
US5451258A (en) * 1994-05-11 1995-09-19 Materials Research Corporation Apparatus and method for improved delivery of vaporized reactant gases to a reaction chamber
EP0832863B1 (de) * 1994-11-16 2002-04-03 The B.F. Goodrich Company Vorrichtung zur Druckfeld CVD/CVI, Verfahren und Produkt
US5653807A (en) * 1996-03-28 1997-08-05 The United States Of America As Represented By The Secretary Of The Air Force Low temperature vapor phase epitaxial system for depositing thin layers of silicon-germanium alloy
US5782980A (en) * 1996-05-14 1998-07-21 Advanced Micro Devices, Inc. Low pressure chemical vapor deposition apparatus including a process gas heating subsystem
EP0903577A3 (de) 1997-07-29 2003-03-05 Leybold Inficon, Inc. Akoustisches Ueberwachung des Verbrauchs
US6136703A (en) * 1998-09-03 2000-10-24 Micron Technology, Inc. Methods for forming phosphorus- and/or boron-containing silica layers on substrates
US6669988B2 (en) 2001-08-20 2003-12-30 Goodrich Corporation Hardware assembly for CVI/CVD processes
US7476419B2 (en) * 1998-10-23 2009-01-13 Goodrich Corporation Method for measurement of weight during a CVI/CVD process
US6311959B1 (en) * 1999-04-22 2001-11-06 Applied Materials, Inc. Method and apparatus for generating controlled mixture of organic vapor and inert gas
US6733590B1 (en) * 1999-05-03 2004-05-11 Seagate Technology Llc. Method and apparatus for multilayer deposition utilizing a common beam source
JP3905678B2 (ja) * 2000-02-28 2007-04-18 株式会社堀場製作所 薄膜堆積方法とその装置および薄膜堆積方法に用いるｆｔｉｒガス分析計並びに薄膜堆積方法に用いる混合ガス供給装置
US7094614B2 (en) 2001-01-16 2006-08-22 International Business Machines Corporation In-situ monitoring of chemical vapor deposition process by mass spectrometry
US6461436B1 (en) * 2001-10-15 2002-10-08 Micron Technology, Inc. Apparatus and process of improving atomic layer deposition chamber performance
JP3973605B2 (ja) * 2002-07-10 2007-09-12 東京エレクトロン株式会社 成膜装置及びこれに使用する原料供給装置、成膜方法
US6806144B2 (en) * 2002-08-13 2004-10-19 Taiwan Semiconductor Manufacturing Co., Ltd Method and apparatus for improved gate oxide uniformity with reducing system contaminants
DE102014115497A1 (de) * 2014-10-24 2016-05-12 Aixtron Se Temperierte Gaszuleitung mit an mehreren Stellen eingespeisten Verdünnungsgasströmen
JP7281285B2 (ja) * 2019-01-28 2023-05-25 株式会社堀場エステック 濃度制御装置、及び、ゼロ点調整方法、濃度制御装置用プログラム

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62273714A (ja) * 1986-05-21 1987-11-27 Clarion Co Ltd 有機金属ガス供給方法および装置
DE68907209T2 (de) * 1988-09-28 1994-02-03 Oki Electric Ind Co Ltd Verfahren zur herstellung eines supraleitfähigen dünnfilmes.
EP0370311B1 (de) * 1988-11-23 1994-08-17 Applied Materials, Inc. Anlage zum chemischen Bedampfen aus der Gasphase und Bauteil zur Versorgung mit Reaktionsmitteln

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020109145A1 (de) * 2018-11-26 2020-06-04 Khs Corpoplast Gmbh Vorrichtung und verfahren zur plasmabehandlung von behältern

Also Published As

Publication number Publication date
DE69202801D1 (de) 1995-07-13
EP0506012A1 (de) 1992-09-30
JPH04295089A (ja) 1992-10-20
US5190913A (en) 1993-03-02
EP0506012B1 (de) 1995-06-07

Similar Documents

Publication Publication Date Title
DE69202801T2 (de) Vorrichtung zur Herstellung von supraleitenden Oxydschichten durch MOCVD-Verfahren.
DE3851070T2 (de) Verfahren zur Herstellung eines Oxid-Verbindungssupraleiterfadens.
DE69200277D1 (de) Vorrichtung zur Herstellung von Schlingen.
DE69115092D1 (de) Verfahren zur Herstellung eines Supraleiters aus Wismutoxyd.
DE68920234T2 (de) Verfahren zur Herstellung eines oxidischen Supraleiters.
DE69109963D1 (de) Verfahren zur Herstellung eines Wismutoxidsupraleiters.
DE68901991T2 (de) Verfahren zur herstellung von hydratiertem zirkoniumoxid aus granuliertem kristallinem zirkoniumoxid.
DE69002710D1 (de) Verfahren zur herstellung von beuteln durch weben.
DE69010178T2 (de) Verfahren zur herstellung von pulverförmigen perovskiteverbindungen.
DE69106742T2 (de) Verfahren uund Vorrichtung zur Herstellung von dünnen Schichten aus supraleitendem Oxyd.
DE68921382T2 (de) Verfahren zur Herstellung von oxidischen Supraleitern des Typs Wismut.
DE58904319D1 (de) Verfahren zur herstellung von labkaese aus rohmilch.
DE68918818D1 (de) Verfahren zur Herstellung von Halbleiterbauelementen durch selektives, U.V.-unterstütztes Aetzen von Mehrschichten.
DE69019176D1 (de) Verfahren zur Herstellung eines supraleitenden Wismutoxid-Drahtes.
DE69205911T2 (de) Verfahren zur Herstellung einer supraleitenden Dünnschicht aus Oxydverbindungen.
DE69200984T3 (de) Verfahren zur Herstellung eines Drahtes aus supraleitendem Oxid.
DE68914921D1 (de) Prozess zur Herstellung thalliumartiger supraleitender Dünnfilme.
DE68904400T2 (de) Verfahren zur herstellung von vergasern.
DE3884151T2 (de) Verfahren zur herstellung eines halbleiterfeldoxids.
DE68921138T3 (de) Verfahren zur Herstellung eines Oxidverbindungssupraleiters des Bi-Sr-Ca-Cu-Systems.
DE69203294D1 (de) Verfahren zur Herstellung einer supraleitenden Dünnschicht aus einer oxidverbindung.
DE3881589D1 (de) Verfahren zur herstellung supraleitender kupferoxid-schichten.
DE68920392D1 (de) Verfahren zur Herstellung eines oxidischen supraleitenden Drahts.
DE69004148T2 (de) Verfahren zur Herstellung einer oxydsupraleitenden Schicht.
DE69205645T2 (de) Verfahren zur Herstellung einer supraleitenden Dünnschicht aus Oxydverbindungen.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee