DE69201431D1 - Zinkoxidkristall und Verfahren zu seiner Herstellung. - Google Patents

Zinkoxidkristall und Verfahren zu seiner Herstellung.

Info

Publication number
DE69201431D1
DE69201431D1 DE69201431T DE69201431T DE69201431D1 DE 69201431 D1 DE69201431 D1 DE 69201431D1 DE 69201431 T DE69201431 T DE 69201431T DE 69201431 T DE69201431 T DE 69201431T DE 69201431 D1 DE69201431 D1 DE 69201431D1
Authority
DE
Germany
Prior art keywords
production
zinc oxide
oxide crystal
crystal
zinc
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69201431T
Other languages
English (en)
Other versions
DE69201431T2 (de
Inventor
Motoi Kitano
Sachiko Maeda
Takeshi Hamabe
Takashige Sato
Mitsumasa Oku
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Application granted granted Critical
Publication of DE69201431D1 publication Critical patent/DE69201431D1/de
Publication of DE69201431T2 publication Critical patent/DE69201431T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/005—Growth of whiskers or needles
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/62—Whiskers or needles

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
DE69201431T 1991-11-14 1992-11-13 Zinkoxidkristall und Verfahren zu seiner Herstellung. Expired - Fee Related DE69201431T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3327134A JP2697431B2 (ja) 1991-11-14 1991-11-14 酸化亜鉛結晶及びその製造方法

Publications (2)

Publication Number Publication Date
DE69201431D1 true DE69201431D1 (de) 1995-03-23
DE69201431T2 DE69201431T2 (de) 1995-08-10

Family

ID=18195697

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69201431T Expired - Fee Related DE69201431T2 (de) 1991-11-14 1992-11-13 Zinkoxidkristall und Verfahren zu seiner Herstellung.

Country Status (5)

Country Link
US (1) US5279809A (de)
EP (1) EP0542291B1 (de)
JP (1) JP2697431B2 (de)
CA (1) CA2082689C (de)
DE (1) DE69201431T2 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07316546A (ja) * 1994-05-23 1995-12-05 Matsushita Electric Ind Co Ltd 撥水表面構造及びその形成方法
US6649824B1 (en) 1999-09-22 2003-11-18 Canon Kabushiki Kaisha Photoelectric conversion device and method of production thereof
JP3715911B2 (ja) 2000-09-21 2005-11-16 キヤノン株式会社 酸化物針状結晶の製造方法、酸化物針状結晶および光電変換装置
JP2002356400A (ja) * 2001-03-22 2002-12-13 Canon Inc 酸化亜鉛の針状構造体の製造方法及びそれを用いた電池、光電変換装置
CN101189367B (zh) * 2005-05-31 2012-01-04 京瓷株式会社 含有针状结晶的排列体的复合体及其制造方法、以及光电转换元件、发光元件及电容器
CA2560030C (en) * 2005-11-24 2013-11-12 Sulzer Metco Ag A thermal spraying material, a thermally sprayed coating, a thermal spraying method an also a thermally coated workpiece
CN113511668B (zh) * 2021-05-25 2023-11-21 扬州工业职业技术学院 一种空心六方体状Zn-Mg氧化物及其在协同双氧水降解罗丹明B中的应用

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR920009567B1 (ko) * 1987-12-29 1992-10-19 마쯔시다덴기산교 가부시기가이샤 산화아연위스커 및 그 제조방법
KR930007857B1 (ko) * 1988-12-16 1993-08-20 마쯔시다덴기산교 가부시기가이샤 산화아연위스커의 제조방법

Also Published As

Publication number Publication date
JPH05139900A (ja) 1993-06-08
DE69201431T2 (de) 1995-08-10
CA2082689C (en) 1998-06-09
EP0542291A1 (de) 1993-05-19
US5279809A (en) 1994-01-18
JP2697431B2 (ja) 1998-01-14
CA2082689A1 (en) 1993-05-15
EP0542291B1 (de) 1995-02-15

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee