DE69201013T2 - Gegenstand oder System mit optischer Vorrichtung auf Siliziumbasis. - Google Patents
Gegenstand oder System mit optischer Vorrichtung auf Siliziumbasis.Info
- Publication number
- DE69201013T2 DE69201013T2 DE69201013T DE69201013T DE69201013T2 DE 69201013 T2 DE69201013 T2 DE 69201013T2 DE 69201013 T DE69201013 T DE 69201013T DE 69201013 T DE69201013 T DE 69201013T DE 69201013 T2 DE69201013 T2 DE 69201013T2
- Authority
- DE
- Germany
- Prior art keywords
- silicon
- optical device
- based optical
- optical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 230000003287 optical effect Effects 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/34—Materials of the light emitting region containing only elements of Group IV of the Periodic Table
- H01L33/343—Materials of the light emitting region containing only elements of Group IV of the Periodic Table characterised by the doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1601—Solid materials characterised by an active (lasing) ion
- H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1601—Solid materials characterised by an active (lasing) ion
- H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
- H01S3/1608—Solid materials characterised by an active (lasing) ion rare earth erbium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1628—Solid materials characterised by a semiconducting matrix
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
- H01S5/3068—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure deep levels
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Lasers (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
- Optical Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/711,243 US5107538A (en) | 1991-06-06 | 1991-06-06 | Optical waveguide system comprising a rare-earth Si-based optical device |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69201013D1 DE69201013D1 (de) | 1995-02-09 |
DE69201013T2 true DE69201013T2 (de) | 1995-05-11 |
Family
ID=24857304
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69201013T Expired - Fee Related DE69201013T2 (de) | 1991-06-06 | 1992-05-29 | Gegenstand oder System mit optischer Vorrichtung auf Siliziumbasis. |
Country Status (4)
Country | Link |
---|---|
US (1) | US5107538A (de) |
EP (1) | EP0517440B1 (de) |
JP (1) | JPH081974B2 (de) |
DE (1) | DE69201013T2 (de) |
Families Citing this family (74)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4022090A1 (de) * | 1989-12-18 | 1991-06-20 | Forschungszentrum Juelich Gmbh | Elektro-optisches bauelement und verfahren zu dessen herstellung |
DE4011860A1 (de) * | 1990-04-09 | 1991-10-10 | Siemens Ag | Halbleiterelement mit einer silizium-schicht |
JP2755471B2 (ja) * | 1990-06-29 | 1998-05-20 | 日立電線株式会社 | 希土類元素添加光導波路及びその製造方法 |
FR2675592B1 (fr) * | 1991-04-22 | 1993-07-16 | Alcatel Nv | Amplificateur optique dans le domaine spectral 1,26 a 1,34 mum. |
FR2685135B1 (fr) * | 1991-12-16 | 1994-02-04 | Commissariat A Energie Atomique | Mini cavite laser pompee optiquement, son procede de fabrication et laser utilisant cette cavite. |
US5322813A (en) * | 1992-08-31 | 1994-06-21 | International Business Machines Corporation | Method of making supersaturated rare earth doped semiconductor layers by chemical vapor deposition |
US5384795A (en) * | 1992-09-15 | 1995-01-24 | Texas Instruments Incorporated | Light emission from rare-earth element-doped CaF2 thin films by electroluminescence |
US5369657A (en) * | 1992-09-15 | 1994-11-29 | Texas Instruments Incorporated | Silicon-based microlaser by doped thin films |
JPH06203959A (ja) * | 1992-09-30 | 1994-07-22 | Texas Instr Inc <Ti> | エレクトロルミネセンスによりNdでドープされたCaF2薄膜から発光せしめる装置および方法 |
US5259046A (en) * | 1992-10-01 | 1993-11-02 | At&T Bell Laboratories | Article comprising an optical waveguide containing a fluorescent dopant |
JPH087286B2 (ja) * | 1992-10-28 | 1996-01-29 | インターナショナル・ビジネス・マシーンズ・コーポレイション | 光導波管装置 |
US5757986A (en) * | 1993-09-21 | 1998-05-26 | Bookham Technology Limited | Integrated silicon pin diode electro-optic waveguide |
US5491768A (en) * | 1994-07-27 | 1996-02-13 | The Chinese University Of Hong Kong | Optical waveguide employing modified gallium arsenide |
EP0799495A4 (de) * | 1994-11-10 | 1999-11-03 | Lawrence Semiconductor Researc | Silizium-germanium-kohlenstoff-verbindung und dazugehörende prozesse |
US5548128A (en) * | 1994-12-14 | 1996-08-20 | The United States Of America As Represented By The Secretary Of The Air Force | Direct-gap germanium-tin multiple-quantum-well electro-optical devices on silicon or germanium substrates |
KR100377716B1 (ko) * | 1998-02-25 | 2003-03-26 | 인터내셔널 비지네스 머신즈 코포레이션 | 광학적 방사를 위해 희토류 원소로 도핑된 실리콘 구조체 및 방사방법 |
US6233070B1 (en) | 1998-05-19 | 2001-05-15 | Bookham Technology Plc | Optical system and method for changing the lengths of optical paths and the phases of light beams |
FR2789496B1 (fr) * | 1999-02-10 | 2002-06-07 | Commissariat Energie Atomique | Dispositif emetteur et guide de lumiere, avec une region active de silicium contenant des centres radiatifs, et procede de fabrication d'un tel dispositif |
US6255669B1 (en) * | 1999-04-23 | 2001-07-03 | The University Of Cincinnati | Visible light emitting device formed from wide band gap semiconductor doped with a rare earth element |
US6351578B1 (en) * | 1999-08-06 | 2002-02-26 | Gemfire Corporation | Thermo-optic switch having fast rise-time |
EP1081812A1 (de) * | 1999-09-02 | 2001-03-07 | STMicroelectronics S.r.l. | Halbleitervorrichtung für elektro-optische Verwendung, Herstellungsverfahren und Halbleiterlaservorrichtung |
JP2001135893A (ja) | 1999-11-05 | 2001-05-18 | Fujitsu Ltd | 光半導体装置および光電子集積回路装置 |
WO2001040540A1 (en) * | 1999-12-02 | 2001-06-07 | Tegal Corporation | Improved reactor with heated and textured electrodes and surfaces |
US6506289B2 (en) | 2000-08-07 | 2003-01-14 | Symmorphix, Inc. | Planar optical devices and methods for their manufacture |
US6734453B2 (en) * | 2000-08-08 | 2004-05-11 | Translucent Photonics, Inc. | Devices with optical gain in silicon |
US6533907B2 (en) | 2001-01-19 | 2003-03-18 | Symmorphix, Inc. | Method of producing amorphous silicon for hard mask and waveguide applications |
US7469558B2 (en) * | 2001-07-10 | 2008-12-30 | Springworks, Llc | As-deposited planar optical waveguides with low scattering loss and methods for their manufacture |
US7404877B2 (en) * | 2001-11-09 | 2008-07-29 | Springworks, Llc | Low temperature zirconia based thermal barrier layer by PVD |
US7290407B1 (en) | 2001-12-19 | 2007-11-06 | Jesse Chienhua Shan | Triangle-shaped planar optical waveguide having reduced scattering loss |
US20030175142A1 (en) * | 2002-03-16 | 2003-09-18 | Vassiliki Milonopoulou | Rare-earth pre-alloyed PVD targets for dielectric planar applications |
US7378356B2 (en) * | 2002-03-16 | 2008-05-27 | Springworks, Llc | Biased pulse DC reactive sputtering of oxide films |
US6884327B2 (en) | 2002-03-16 | 2005-04-26 | Tao Pan | Mode size converter for a planar waveguide |
US6924510B2 (en) | 2002-05-06 | 2005-08-02 | Intel Corporation | Silicon and silicon/germanium light-emitting device, methods and systems |
US8021778B2 (en) | 2002-08-09 | 2011-09-20 | Infinite Power Solutions, Inc. | Electrochemical apparatus with barrier layer protected substrate |
US20070264564A1 (en) | 2006-03-16 | 2007-11-15 | Infinite Power Solutions, Inc. | Thin film battery on an integrated circuit or circuit board and method thereof |
US8445130B2 (en) | 2002-08-09 | 2013-05-21 | Infinite Power Solutions, Inc. | Hybrid thin-film battery |
US8236443B2 (en) | 2002-08-09 | 2012-08-07 | Infinite Power Solutions, Inc. | Metal film encapsulation |
US8394522B2 (en) | 2002-08-09 | 2013-03-12 | Infinite Power Solutions, Inc. | Robust metal film encapsulation |
US7993773B2 (en) | 2002-08-09 | 2011-08-09 | Infinite Power Solutions, Inc. | Electrochemical apparatus with barrier layer protected substrate |
US8431264B2 (en) | 2002-08-09 | 2013-04-30 | Infinite Power Solutions, Inc. | Hybrid thin-film battery |
US8404376B2 (en) | 2002-08-09 | 2013-03-26 | Infinite Power Solutions, Inc. | Metal film encapsulation |
WO2004021532A1 (en) * | 2002-08-27 | 2004-03-11 | Symmorphix, Inc. | Optically coupling into highly uniform waveguides |
US7205662B2 (en) | 2003-02-27 | 2007-04-17 | Symmorphix, Inc. | Dielectric barrier layer films |
US7238628B2 (en) * | 2003-05-23 | 2007-07-03 | Symmorphix, Inc. | Energy conversion and storage films and devices by physical vapor deposition of titanium and titanium oxides and sub-oxides |
US8728285B2 (en) | 2003-05-23 | 2014-05-20 | Demaray, Llc | Transparent conductive oxides |
WO2005002006A2 (en) * | 2003-06-30 | 2005-01-06 | University Of Cincinnati | Impurity-based electroluminescent waveguide amplifier and methods for amplifying optical data signals |
JP2005116709A (ja) * | 2003-10-06 | 2005-04-28 | Sony Corp | 半導体集積回路装置およびその製造方法 |
US7440180B2 (en) * | 2004-02-13 | 2008-10-21 | Tang Yin S | Integration of rare-earth doped amplifiers into semiconductor structures and uses of same |
JP2006133723A (ja) * | 2004-10-08 | 2006-05-25 | Sony Corp | 光導波モジュール及び光・電気複合デバイス、並びにこれらの製造方法 |
US7959769B2 (en) | 2004-12-08 | 2011-06-14 | Infinite Power Solutions, Inc. | Deposition of LiCoO2 |
CN101931097B (zh) | 2004-12-08 | 2012-11-21 | 希莫菲克斯公司 | LiCoO2的沉积 |
WO2006066611A1 (en) * | 2004-12-24 | 2006-06-29 | Pirelli & C. S.P.A. | Photodetector in germanium on silicon |
US7037806B1 (en) * | 2005-02-09 | 2006-05-02 | Translucent Inc. | Method of fabricating silicon-on-insulator semiconductor substrate using rare earth oxide or rare earth nitride |
JP2006332137A (ja) * | 2005-05-23 | 2006-12-07 | Nippon Telegr & Teleph Corp <Ntt> | 発光素子 |
US7838133B2 (en) * | 2005-09-02 | 2010-11-23 | Springworks, Llc | Deposition of perovskite and other compound ceramic films for dielectric applications |
CN101313395B (zh) * | 2005-12-09 | 2013-03-27 | 山米奎普公司 | 通过植入碳团簇制造半导体装置的系统和方法 |
WO2007137157A2 (en) * | 2006-05-18 | 2007-11-29 | Massachusetts Institute Of Technology | Extrinsic gain laser and optical amplification device |
US8062708B2 (en) | 2006-09-29 | 2011-11-22 | Infinite Power Solutions, Inc. | Masking of and material constraint for depositing battery layers on flexible substrates |
US8197781B2 (en) | 2006-11-07 | 2012-06-12 | Infinite Power Solutions, Inc. | Sputtering target of Li3PO4 and method for producing same |
US7919402B2 (en) * | 2006-12-06 | 2011-04-05 | Semequip, Inc. | Cluster ion implantation for defect engineering |
US8144392B2 (en) * | 2007-02-12 | 2012-03-27 | The United States Of America As Represented By The Secretary Of The Navy | Waveguide amplifier in a sputtered film of erbium-doped gallium lanthanum sulfide glass |
WO2008128039A2 (en) * | 2007-04-11 | 2008-10-23 | Semequip, Inc. | Cluster ion implantation for defect engineering |
US8268488B2 (en) | 2007-12-21 | 2012-09-18 | Infinite Power Solutions, Inc. | Thin film electrolyte for thin film batteries |
KR20100102180A (ko) | 2007-12-21 | 2010-09-20 | 인피니트 파워 솔루션스, 인크. | 전해질 막을 위한 표적을 스퍼터링하는 방법 |
JP5705549B2 (ja) | 2008-01-11 | 2015-04-22 | インフィニット パワー ソリューションズ, インコーポレイテッド | 薄膜電池および他のデバイスのための薄膜カプセル化 |
US8350519B2 (en) | 2008-04-02 | 2013-01-08 | Infinite Power Solutions, Inc | Passive over/under voltage control and protection for energy storage devices associated with energy harvesting |
US8906523B2 (en) * | 2008-08-11 | 2014-12-09 | Infinite Power Solutions, Inc. | Energy device with integral collector surface for electromagnetic energy harvesting and method thereof |
EP2332127A4 (de) | 2008-09-12 | 2011-11-09 | Infinite Power Solutions Inc | Energievorrichtung mit leitender oberfläche für datenkommunikation über elektromagnetische energie und verfahren dafür |
WO2010042594A1 (en) | 2008-10-08 | 2010-04-15 | Infinite Power Solutions, Inc. | Environmentally-powered wireless sensor module |
EP2474056B1 (de) | 2009-09-01 | 2016-05-04 | Sapurast Research LLC | Bestückte leiterplatte mit integrierter dünnschichtbatterie |
JP2013528912A (ja) | 2010-06-07 | 2013-07-11 | インフィニット パワー ソリューションズ, インコーポレイテッド | 再充電可能高密度電気化学素子 |
JP5831165B2 (ja) | 2011-11-21 | 2015-12-09 | 富士通株式会社 | 半導体光素子 |
CN103219646A (zh) * | 2013-03-21 | 2013-07-24 | 常州镭赛科技有限公司 | 光放大器 |
CN110429474B (zh) * | 2019-07-31 | 2021-05-14 | 天津工业大学 | 一种全四族硅基c波段半导体激光器 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3319134A1 (de) * | 1983-05-26 | 1985-05-02 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V., 8000 München | Optoelektronisches bauelement, insbesondere eine laserdiode oder eine leuchtdiode |
JPS60114811A (ja) * | 1983-11-28 | 1985-06-21 | Hitachi Ltd | 光導波路およびその製造方法 |
US4575919A (en) * | 1984-05-24 | 1986-03-18 | At&T Bell Laboratories | Method of making heteroepitaxial ridge overgrown laser |
GB8724736D0 (en) * | 1987-10-22 | 1987-11-25 | British Telecomm | Optical fibre |
US5023885A (en) * | 1988-09-20 | 1991-06-11 | Siemens Aktiengesellschaft | External optical resonator for a semiconductor laser |
US4962995A (en) * | 1989-06-16 | 1990-10-16 | Gte Laboratories Incorporated | Glasses for high efficiency erbium (3+) optical fiber lasers, amplifiers, and superluminescent sources |
JPH0373934A (ja) * | 1989-08-15 | 1991-03-28 | Fujitsu Ltd | 光増幅器 |
JP2677682B2 (ja) * | 1989-09-13 | 1997-11-17 | 日立電線株式会社 | 複数波長伝送用アクティブ伝送路及びそれを用いた伝送システム |
US5005175A (en) * | 1989-11-27 | 1991-04-02 | At&T Bell Laboratories | Erbium-doped fiber amplifier |
US5027079A (en) * | 1990-01-19 | 1991-06-25 | At&T Bell Laboratories | Erbium-doped fiber amplifier |
JPH0644645B2 (ja) * | 1990-03-30 | 1994-06-08 | ホーヤ株式会社 | 光導波路型レーザ媒体及び光導波路型レーザ装置 |
US5039190A (en) * | 1990-09-07 | 1991-08-13 | At&T Bell Laboratories | Apparatus comprising an optical gain device, and method of producing the device |
-
1991
- 1991-06-06 US US07/711,243 patent/US5107538A/en not_active Expired - Lifetime
-
1992
- 1992-05-11 JP JP14364492A patent/JPH081974B2/ja not_active Expired - Lifetime
- 1992-05-29 EP EP92304896A patent/EP0517440B1/de not_active Expired - Lifetime
- 1992-05-29 DE DE69201013T patent/DE69201013T2/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0517440A3 (en) | 1993-01-20 |
JPH081974B2 (ja) | 1996-01-10 |
EP0517440A2 (de) | 1992-12-09 |
US5107538A (en) | 1992-04-21 |
EP0517440B1 (de) | 1994-12-28 |
DE69201013D1 (de) | 1995-02-09 |
JPH05175592A (ja) | 1993-07-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8328 | Change in the person/name/address of the agent |
Free format text: BLUMBACH, KRAMER & PARTNER, 65193 WIESBADEN |
|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |