DE69201782T2 - Optoelektronische Vorrichtung mit sehr niedrigem Serienwiderstand. - Google Patents

Optoelektronische Vorrichtung mit sehr niedrigem Serienwiderstand.

Info

Publication number
DE69201782T2
DE69201782T2 DE69201782T DE69201782T DE69201782T2 DE 69201782 T2 DE69201782 T2 DE 69201782T2 DE 69201782 T DE69201782 T DE 69201782T DE 69201782 T DE69201782 T DE 69201782T DE 69201782 T2 DE69201782 T2 DE 69201782T2
Authority
DE
Germany
Prior art keywords
optoelectronic device
series resistance
low series
low
optoelectronic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69201782T
Other languages
English (en)
Other versions
DE69201782D1 (de
Inventor
Christophe Kazmierski
Benoit Rose
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oclaro North America Inc
Original Assignee
France Telecom SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by France Telecom SA filed Critical France Telecom SA
Publication of DE69201782D1 publication Critical patent/DE69201782D1/de
Application granted granted Critical
Publication of DE69201782T2 publication Critical patent/DE69201782T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3072—Diffusion blocking layer, i.e. a special layer blocking diffusion of dopants
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/3235—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers
    • H01S5/32391—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers based on In(Ga)(As)P
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/3434—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer comprising at least both As and P as V-compounds

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Nanotechnology (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
DE69201782T 1991-12-04 1992-12-01 Optoelektronische Vorrichtung mit sehr niedrigem Serienwiderstand. Expired - Fee Related DE69201782T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9115000A FR2684805B1 (fr) 1991-12-04 1991-12-04 Dispositif optoelectronique a tres faible resistance serie.

Publications (2)

Publication Number Publication Date
DE69201782D1 DE69201782D1 (de) 1995-04-27
DE69201782T2 true DE69201782T2 (de) 1995-10-05

Family

ID=9419648

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69201782T Expired - Fee Related DE69201782T2 (de) 1991-12-04 1992-12-01 Optoelektronische Vorrichtung mit sehr niedrigem Serienwiderstand.

Country Status (4)

Country Link
US (1) US5306923A (de)
EP (1) EP0545808B1 (de)
DE (1) DE69201782T2 (de)
FR (1) FR2684805B1 (de)

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US6664605B1 (en) * 2000-03-31 2003-12-16 Triquint Technology Holding Co. Dopant diffusion blocking for optoelectronic devices using InAlAs and/or InGaAlAs
JP2003234541A (ja) * 2001-12-07 2003-08-22 Furukawa Electric Co Ltd:The 分布帰還型半導体レーザ素子
US11726332B2 (en) 2009-04-27 2023-08-15 Digilens Inc. Diffractive projection apparatus
US11300795B1 (en) 2009-09-30 2022-04-12 Digilens Inc. Systems for and methods of using fold gratings coordinated with output couplers for dual axis expansion
US10795160B1 (en) 2014-09-25 2020-10-06 Rockwell Collins, Inc. Systems for and methods of using fold gratings for dual axis expansion
US11320571B2 (en) * 2012-11-16 2022-05-03 Rockwell Collins, Inc. Transparent waveguide display providing upper and lower fields of view with uniform light extraction
WO2012136970A1 (en) 2011-04-07 2012-10-11 Milan Momcilo Popovich Laser despeckler based on angular diversity
EP2748670B1 (de) 2011-08-24 2015-11-18 Rockwell Collins, Inc. Tragbare datenanzeige
WO2016020630A2 (en) 2014-08-08 2016-02-11 Milan Momcilo Popovich Waveguide laser illuminator incorporating a despeckler
WO2013163347A1 (en) 2012-04-25 2013-10-31 Rockwell Collins, Inc. Holographic wide angle display
US9933684B2 (en) 2012-11-16 2018-04-03 Rockwell Collins, Inc. Transparent waveguide display providing upper and lower fields of view having a specific light output aperture configuration
WO2016042283A1 (en) 2014-09-19 2016-03-24 Milan Momcilo Popovich Method and apparatus for generating input images for holographic waveguide displays
US10437064B2 (en) 2015-01-12 2019-10-08 Digilens Inc. Environmentally isolated waveguide display
US9632226B2 (en) 2015-02-12 2017-04-25 Digilens Inc. Waveguide grating device
US10126552B2 (en) 2015-05-18 2018-11-13 Rockwell Collins, Inc. Micro collimator system and method for a head up display (HUD)
US11366316B2 (en) 2015-05-18 2022-06-21 Rockwell Collins, Inc. Head up display (HUD) using a light pipe
US10690916B2 (en) 2015-10-05 2020-06-23 Digilens Inc. Apparatus for providing waveguide displays with two-dimensional pupil expansion
CN108780224B (zh) 2016-03-24 2021-08-03 迪吉伦斯公司 用于提供偏振选择性全息波导装置的方法和设备
EP3433658B1 (de) 2016-04-11 2023-08-09 DigiLens, Inc. Holographische wellenleitervorrichtung für die projektion von strukturiertem licht
US11513350B2 (en) 2016-12-02 2022-11-29 Digilens Inc. Waveguide device with uniform output illumination
WO2018129398A1 (en) 2017-01-05 2018-07-12 Digilens, Inc. Wearable heads up displays
JP2022520472A (ja) 2019-02-15 2022-03-30 ディジレンズ インコーポレイテッド 統合された格子を使用してホログラフィック導波管ディスプレイを提供するための方法および装置
EP3980825A4 (de) 2019-06-07 2023-05-03 Digilens Inc. Wellenleiter mit durchlässigen und reflektierenden gittern sowie zugehörige herstellungsverfahren
EP4022370A4 (de) 2019-08-29 2023-08-30 Digilens Inc. Evakuierungs-bragg-gitter und herstellungsverfahren
CN112542770B (zh) * 2020-12-04 2021-10-15 苏州长光华芯光电技术股份有限公司 一种半导体器件及其制备方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5688388A (en) * 1979-12-19 1981-07-17 Matsushita Electric Ind Co Ltd Semiconductor laser device
US4479222A (en) * 1982-04-27 1984-10-23 The United States Of America As Represented By The Secretary Of The Air Force Diffusion barrier for long wavelength laser diodes
JPS61228684A (ja) * 1985-04-02 1986-10-11 Sumitomo Electric Ind Ltd 半導体発光素子
JPS647667A (en) * 1987-06-30 1989-01-11 Shimadzu Corp Light-emitting diode of edge emission type
CA2008379C (en) * 1989-01-24 1993-08-31 Hajime Sakiyama Semiconductor lasers
JPH0449691A (ja) * 1990-06-18 1992-02-19 Mitsubishi Electric Corp 可視光レーザダイオード
JPH04100288A (ja) * 1990-08-20 1992-04-02 Denki Kagaku Kogyo Kk 半導体レーザおよびその製造方法
JP2653562B2 (ja) * 1991-02-05 1997-09-17 三菱電機株式会社 半導体レーザおよびその製造方法
JP2863648B2 (ja) * 1991-04-16 1999-03-03 三菱電機株式会社 可視光半導体レーザ
US5212705A (en) * 1992-02-18 1993-05-18 Eastman Kodak Company AlAS Zn-stop diffusion layer in AlGaAs laser diodes

Also Published As

Publication number Publication date
DE69201782D1 (de) 1995-04-27
US5306923A (en) 1994-04-26
FR2684805A1 (fr) 1993-06-11
FR2684805B1 (fr) 1998-08-14
EP0545808A1 (de) 1993-06-09
EP0545808B1 (de) 1995-03-22

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: AVANEX CORP.(N.D.GES.D.STAATES DELAWARE), FREMONT,

8339 Ceased/non-payment of the annual fee