DE69133422D1 - Leiterrahmen und diesen verwendende halbleiter verpackung - Google Patents

Leiterrahmen und diesen verwendende halbleiter verpackung

Info

Publication number
DE69133422D1
DE69133422D1 DE69133422T DE69133422T DE69133422D1 DE 69133422 D1 DE69133422 D1 DE 69133422D1 DE 69133422 T DE69133422 T DE 69133422T DE 69133422 T DE69133422 T DE 69133422T DE 69133422 D1 DE69133422 D1 DE 69133422D1
Authority
DE
Germany
Prior art keywords
ladder frame
semiconductor packing
packing
semiconductor
ladder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69133422T
Other languages
English (en)
Other versions
DE69133422T2 (de
Inventor
Takashi Kuse
Nobuaki Nakashima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE69133422D1 publication Critical patent/DE69133422D1/de
Application granted granted Critical
Publication of DE69133422T2 publication Critical patent/DE69133422T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
    • H01L23/49586—Insulating layers on lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01012—Magnesium [Mg]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0102—Calcium [Ca]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01039—Yttrium [Y]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01057—Lanthanum [La]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01327—Intermediate phases, i.e. intermetallics compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
DE69133422T 1990-05-31 1991-05-30 Leiterrahmen und diesen verwendende halbleiter verpackung Expired - Lifetime DE69133422T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP14296490 1990-05-31
JP14296490 1990-05-31
PCT/JP1991/000728 WO1991019320A1 (en) 1990-05-31 1991-05-30 Lead frame and semiconductor package using it

Publications (2)

Publication Number Publication Date
DE69133422D1 true DE69133422D1 (de) 2004-11-25
DE69133422T2 DE69133422T2 (de) 2006-02-02

Family

ID=15327758

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69133422T Expired - Lifetime DE69133422T2 (de) 1990-05-31 1991-05-30 Leiterrahmen und diesen verwendende halbleiter verpackung

Country Status (6)

Country Link
US (1) US5315152A (de)
EP (1) EP0485627B1 (de)
JP (2) JP3431139B2 (de)
KR (1) KR960010146B1 (de)
DE (1) DE69133422T2 (de)
WO (1) WO1991019320A1 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05222471A (ja) * 1991-12-16 1993-08-31 Toshiba Corp 装飾用銅鉄合金
EP1134730A3 (de) * 2000-03-14 2002-08-14 Nippon Mining & Metals Co., Ltd. Kupferlegierungsfolie für Aufhängungselement eines Plattenlaufwerks
US6749699B2 (en) 2000-08-09 2004-06-15 Olin Corporation Silver containing copper alloy
KR100513947B1 (ko) * 2002-03-29 2005-09-09 닛코 킨조쿠 가부시키가이샤 프레스성이 양호한 구리 합금 소재 및 그 제조방법
JP3740474B2 (ja) * 2003-03-20 2006-02-01 日鉱金属加工株式会社 導電性に優れるチタン銅及びその製造方法
JP3731600B2 (ja) 2003-09-19 2006-01-05 住友金属工業株式会社 銅合金およびその製造方法
WO2005068098A1 (ja) 2004-01-16 2005-07-28 Sumitomo Metal Industries, Ltd. 継目無管の製造方法
EP1731624A4 (de) * 2004-03-12 2007-06-13 Sumitomo Metal Ind Kupferlegierung und herstellungsverfahren dafür
KR100702662B1 (ko) * 2005-02-18 2007-04-02 엠케이전자 주식회사 반도체 패키징용 구리 본딩 와이어
US20100247955A1 (en) * 2006-09-29 2010-09-30 Kabushiki Kaisha Toshiba Joint with first and second members with a joining layer located therebetween containing sn metal and another metallic material; methods for forming the same
CN101768680B (zh) * 2008-12-26 2011-07-20 北京有色金属研究总院 一种适用于引线框架用铜合金的复合变质剂
DE102013007274B4 (de) 2013-04-26 2020-01-16 Wieland-Werke Ag Konstruktionsteil aus einer Kupfergusslegierung
CN105762199A (zh) * 2016-05-04 2016-07-13 滨海治润电子有限公司 一种二极管的超薄型封装产品及其封装方法
CN106011524A (zh) * 2016-06-29 2016-10-12 南通恒金复合材料有限公司 汽车水箱散热器用铜带
JP7170498B2 (ja) * 2018-10-24 2022-11-14 株式会社三井ハイテック リードフレーム、及びリードフレームパッケージ
US11715678B2 (en) * 2020-12-31 2023-08-01 Texas Instruments Incorporated Roughened conductive components
CN113699409A (zh) * 2021-09-24 2021-11-26 汕头市骏码凯撒有限公司 一种用于半导体封装的粗铜线及其制造方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5295176A (en) * 1976-02-06 1977-08-10 Hitachi Ltd Manufacture of semiconductor apparatus
CA1201211A (en) * 1982-08-05 1986-02-25 Olin Corporation Hermetically sealed semiconductor casing
JPS59117144A (ja) * 1982-12-23 1984-07-06 Toshiba Corp リ−ドフレ−ムおよびその製造方法
US4524238A (en) * 1982-12-29 1985-06-18 Olin Corporation Semiconductor packages
JPS59193233A (ja) * 1983-04-15 1984-11-01 Toshiba Corp 銅合金
JPS6047625A (ja) * 1983-08-23 1985-03-15 株式会社ゼニライトブイ 水中構造物の所定水深保持装置
US4612167A (en) * 1984-03-02 1986-09-16 Hitachi Metals, Ltd. Copper-base alloys for leadframes
JPS6199643A (ja) * 1984-10-19 1986-05-17 Hitachi Metals Ltd リ−ドフレ−ム用銅合金
JPS6270540A (ja) * 1985-09-20 1987-04-01 Mitsubishi Metal Corp 半導体装置用Ｃｕ合金リ−ド素材
US4749548A (en) * 1985-09-13 1988-06-07 Mitsubishi Kinzoku Kabushiki Kaisha Copper alloy lead material for use in semiconductor device
JPS62247039A (ja) * 1985-12-16 1987-10-28 Furukawa Electric Co Ltd:The 電子機器用銅合金
JPH0637680B2 (ja) * 1987-06-15 1994-05-18 三菱電機株式会社 疲労特性に優れたＣｕ−Ｎｉ−Ｓｎ合金
US4888449A (en) * 1988-01-04 1989-12-19 Olin Corporation Semiconductor package
AU611343B2 (en) * 1989-07-31 1991-06-06 Toyota Jidosha Kabushiki Kaisha Dispersion strengthened copper-base alloy for overlay
KR920006826B1 (ko) * 1990-09-18 1992-08-20 주식회사 풍산 고전도성 전기, 전자부품용 동합금 및 그 제조방법

Also Published As

Publication number Publication date
EP0485627A4 (en) 1993-06-02
EP0485627B1 (de) 2004-10-20
WO1991019320A1 (en) 1991-12-12
KR920702796A (ko) 1992-10-06
JP3431139B2 (ja) 2003-07-28
EP0485627A1 (de) 1992-05-20
DE69133422T2 (de) 2006-02-02
KR960010146B1 (ko) 1996-07-26
JP2000156452A (ja) 2000-06-06
US5315152A (en) 1994-05-24

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