DE69130285D1 - Festkörper-Bildaufnahmevorrichtung - Google Patents

Festkörper-Bildaufnahmevorrichtung

Info

Publication number
DE69130285D1
DE69130285D1 DE69130285T DE69130285T DE69130285D1 DE 69130285 D1 DE69130285 D1 DE 69130285D1 DE 69130285 T DE69130285 T DE 69130285T DE 69130285 T DE69130285 T DE 69130285T DE 69130285 D1 DE69130285 D1 DE 69130285D1
Authority
DE
Germany
Prior art keywords
imaging device
solid state
state imaging
solid
state
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69130285T
Other languages
English (en)
Other versions
DE69130285T2 (de
Inventor
Takeshi Masuda
Kiyotaka Yashiro
Yuji Miyachi
Tadashi Shiraishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Space Development Agency of Japan
Mitsubishi Electric Corp
Original Assignee
National Space Development Agency of Japan
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Space Development Agency of Japan, Mitsubishi Electric Corp filed Critical National Space Development Agency of Japan
Application granted granted Critical
Publication of DE69130285D1 publication Critical patent/DE69130285D1/de
Publication of DE69130285T2 publication Critical patent/DE69130285T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76816—Output structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14831—Area CCD imagers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Electromagnetism (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
DE69130285T 1990-11-29 1991-11-26 Festkörper-Bildaufnahmevorrichtung Expired - Lifetime DE69130285T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2336257A JP2604905B2 (ja) 1990-11-29 1990-11-29 固体撮像装置

Publications (2)

Publication Number Publication Date
DE69130285D1 true DE69130285D1 (de) 1998-11-05
DE69130285T2 DE69130285T2 (de) 1999-06-17

Family

ID=18297256

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69133197T Expired - Lifetime DE69133197T2 (de) 1990-11-29 1991-11-26 Festkörper-Bildaufnahmevorrichtung
DE69130285T Expired - Lifetime DE69130285T2 (de) 1990-11-29 1991-11-26 Festkörper-Bildaufnahmevorrichtung

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE69133197T Expired - Lifetime DE69133197T2 (de) 1990-11-29 1991-11-26 Festkörper-Bildaufnahmevorrichtung

Country Status (4)

Country Link
US (1) US5249055A (de)
EP (2) EP0854517B1 (de)
JP (1) JP2604905B2 (de)
DE (2) DE69133197T2 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6366322B1 (en) * 1991-04-15 2002-04-02 Lg Semicon Co., Ltd. Horizontal charge coupled device of CCD image sensor
JPH05198786A (ja) * 1992-01-22 1993-08-06 Sharp Corp クリアモールドｃｃｄ固体撮像素子
JPH0738077A (ja) * 1993-07-23 1995-02-07 Sony Corp 固体撮像素子の製造方法及び固体撮像装置
JP3370249B2 (ja) 1996-12-27 2003-01-27 松下電器産業株式会社 固体撮像装置とその駆動方法および製造方法
JP4139051B2 (ja) * 2000-06-28 2008-08-27 富士フイルム株式会社 リニアイメージセンサチップおよびリニアイメージセンサ
JP2003285249A (ja) 2002-03-27 2003-10-07 Mori Seiki Co Ltd 工作機械の精度解析装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3890633A (en) * 1971-04-06 1975-06-17 Rca Corp Charge-coupled circuits
DE2501934C2 (de) * 1974-01-25 1982-11-11 Hughes Aircraft Co., Culver City, Calif. Verfahren zum Betrieb eines ladungsgekoppelten Halbleiter-Bauelementes und ladungsgekoppeltes Halbleiter-Bauelement zur Durchführung dieses Verfahrens
JPS548428A (en) * 1977-06-22 1979-01-22 Hitachi Ltd Address buffer circuit
JPS58130564A (ja) * 1982-01-29 1983-08-04 Toshiba Corp コンパレ−タ
JPS60119182A (ja) * 1983-11-30 1985-06-26 Mitsubishi Electric Corp 固体撮像素子
US4647977A (en) * 1985-01-15 1987-03-03 Rca Corporation Charge-coupled-device parallel-to-serial converter
US4896340A (en) * 1985-11-01 1990-01-23 Hughes Aircraft Company Partial direct injection for signal processing system
JPS63226177A (ja) * 1986-12-15 1988-09-20 Mitsubishi Electric Corp Ｃｓｄ型固体撮像素子
US5063449A (en) * 1988-11-18 1991-11-05 Kabushiki Kaisha Toshiba Solid-state image sensor employing a gate and diode for bias charge injection

Also Published As

Publication number Publication date
EP0488647B1 (de) 1998-09-30
EP0488647A2 (de) 1992-06-03
EP0854517B1 (de) 2003-02-12
EP0854517A2 (de) 1998-07-22
DE69133197T2 (de) 2003-11-27
DE69130285T2 (de) 1999-06-17
JP2604905B2 (ja) 1997-04-30
JPH04207368A (ja) 1992-07-29
DE69133197D1 (de) 2003-03-20
EP0854517A3 (de) 1998-08-19
US5249055A (en) 1993-09-28
EP0488647A3 (en) 1992-12-23

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition