DE69128436T2 - Halbleiterbauteil mit heissen Ladungsträgern - Google Patents

Halbleiterbauteil mit heissen Ladungsträgern

Info

Publication number
DE69128436T2
DE69128436T2 DE69128436T DE69128436T DE69128436T2 DE 69128436 T2 DE69128436 T2 DE 69128436T2 DE 69128436 T DE69128436 T DE 69128436T DE 69128436 T DE69128436 T DE 69128436T DE 69128436 T2 DE69128436 T2 DE 69128436T2
Authority
DE
Germany
Prior art keywords
semiconductor component
charge carriers
hot charge
hot
carriers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69128436T
Other languages
English (en)
Other versions
DE69128436D1 (de
Inventor
Hendrik Van Houten
Laurens Wigbolt Molenkamp
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV, Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Application granted granted Critical
Publication of DE69128436D1 publication Critical patent/DE69128436D1/de
Publication of DE69128436T2 publication Critical patent/DE69128436T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/7606—Transistor-like structures, e.g. hot electron transistor [HET]; metal base transistor [MBT]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
DE69128436T 1990-03-24 1991-03-20 Halbleiterbauteil mit heissen Ladungsträgern Expired - Fee Related DE69128436T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL9000698A NL9000698A (nl) 1990-03-24 1990-03-24 Element voor toepassing in een elektrische schakeling.

Publications (2)

Publication Number Publication Date
DE69128436D1 DE69128436D1 (de) 1998-01-29
DE69128436T2 true DE69128436T2 (de) 1998-06-04

Family

ID=19856810

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69128436T Expired - Fee Related DE69128436T2 (de) 1990-03-24 1991-03-20 Halbleiterbauteil mit heissen Ladungsträgern

Country Status (5)

Country Link
US (1) US5130765A (de)
EP (1) EP0450691B1 (de)
JP (1) JP3126746B2 (de)
DE (1) DE69128436T2 (de)
NL (1) NL9000698A (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2715722B2 (ja) * 1991-08-23 1998-02-18 日本電気株式会社 半導体シナプス回路とその製造方法、及び半導体ニューロン素子、及び半導体−超伝導体複合ニューロン素子
JPH05315598A (ja) * 1992-05-08 1993-11-26 Fujitsu Ltd 半導体装置
KR100746823B1 (ko) * 2006-08-29 2007-08-06 동부일렉트로닉스 주식회사 반도체소자 및 그 반도체소자의 아날로그 채널저항측정방법

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8500218A (nl) * 1985-01-28 1986-08-18 Philips Nv Halfgeleiderinrichting met tweedimensionaal ladingsdragergas.
NL8703119A (nl) * 1987-12-23 1989-07-17 Philips Nv Element voor toepassing in een elektrische schakeling.

Also Published As

Publication number Publication date
EP0450691A1 (de) 1991-10-09
EP0450691B1 (de) 1997-12-17
DE69128436D1 (de) 1998-01-29
JP3126746B2 (ja) 2001-01-22
NL9000698A (nl) 1991-10-16
US5130765A (en) 1992-07-14
JPH04223375A (ja) 1992-08-13

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: KONINKLIJKE PHILIPS ELECTRONICS N.V., EINDHOVEN, N

8339 Ceased/non-payment of the annual fee