DE69116595D1 - Steuerbarer Halbleitermodulator mit gestaffelten Kontakten - Google Patents

Steuerbarer Halbleitermodulator mit gestaffelten Kontakten

Info

Publication number
DE69116595D1
DE69116595D1 DE69116595T DE69116595T DE69116595D1 DE 69116595 D1 DE69116595 D1 DE 69116595D1 DE 69116595 T DE69116595 T DE 69116595T DE 69116595 T DE69116595 T DE 69116595T DE 69116595 D1 DE69116595 D1 DE 69116595D1
Authority
DE
Germany
Prior art keywords
controllable semiconductor
semiconductor modulator
staggered contacts
staggered
contacts
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69116595T
Other languages
English (en)
Other versions
DE69116595T2 (de
Inventor
John E Cunningham
Keith W Goossen
William Y Jan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
AT&T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AT&T Corp filed Critical AT&T Corp
Publication of DE69116595D1 publication Critical patent/DE69116595D1/de
Application granted granted Critical
Publication of DE69116595T2 publication Critical patent/DE69116595T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/0151—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the refractive index
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2203/00—Function characteristic
    • G02F2203/01—Function characteristic transmissive
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2203/00—Function characteristic
    • G02F2203/02—Function characteristic reflective

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
DE69116595T 1990-05-18 1991-05-08 Steuerbarer Halbleitermodulator mit gestaffelten Kontakten Expired - Fee Related DE69116595T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/526,084 US5093695A (en) 1990-05-18 1990-05-18 Controllable semiconductor modulator having interleaved contacts

Publications (2)

Publication Number Publication Date
DE69116595D1 true DE69116595D1 (de) 1996-03-07
DE69116595T2 DE69116595T2 (de) 1996-09-05

Family

ID=24095846

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69116595T Expired - Fee Related DE69116595T2 (de) 1990-05-18 1991-05-08 Steuerbarer Halbleitermodulator mit gestaffelten Kontakten

Country Status (4)

Country Link
US (1) US5093695A (de)
EP (1) EP0457483B1 (de)
JP (1) JP2902501B2 (de)
DE (1) DE69116595T2 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5239186A (en) * 1991-08-26 1993-08-24 Trw Inc. Composite quantum well infrared detector
US5208695A (en) * 1991-09-20 1993-05-04 The United States Of America As Represented By The Secretary Of The Army Optical modulator based on gamma -X valley mixing in GaAs-AlAs
FR2689683B1 (fr) * 1992-04-07 1994-05-20 Thomson Composants Microondes Dispositif semiconducteur a transistors complementaires.
US5608230A (en) * 1992-12-21 1997-03-04 The Furukawa Electric Co., Ltd. Strained superlattice semiconductor photodetector having a side contact structure
EP0622880A3 (de) * 1993-04-30 1995-01-25 At & T Corp Hetero-Grenzfläche mit reduziertem Widerstand.
US5510277A (en) * 1994-06-29 1996-04-23 At&T Corp. Surface treatment for silicon substrates
US5627854A (en) * 1995-03-15 1997-05-06 Lucent Technologies Inc. Saturable bragg reflector
WO1998028656A1 (en) * 1996-12-20 1998-07-02 Emory University LOW-TEMPERATURE-GROWN Be-DOPED InGaAs/InA1As MULTIPLE QUANTUM WELLS
FR2758657B1 (fr) * 1997-01-17 1999-04-09 France Telecom Photodetecteur metal-semiconducteur-metal
JP3652977B2 (ja) 2000-06-06 2005-05-25 ユーディナデバイス株式会社 半導体受光装置およびその製造方法
JP2002083999A (ja) * 2000-06-21 2002-03-22 Sharp Corp 半導体発光素子

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4525687A (en) * 1983-02-28 1985-06-25 At&T Bell Laboratories High speed light modulator using multiple quantum well structures
US4716449A (en) * 1984-03-14 1987-12-29 American Telephone And Telegraph Company At&T Bell Laboratories Nonlinear and bistable optical device
JPS63108733A (ja) * 1986-10-24 1988-05-13 Nec Corp 半導体集積回路
US4929064A (en) * 1988-07-21 1990-05-29 American Telephone And Telegraph Company Optical communications modulator device

Also Published As

Publication number Publication date
EP0457483A2 (de) 1991-11-21
JPH04229823A (ja) 1992-08-19
DE69116595T2 (de) 1996-09-05
EP0457483A3 (en) 1992-08-05
US5093695A (en) 1992-03-03
JP2902501B2 (ja) 1999-06-07
EP0457483B1 (de) 1996-01-24

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee