DE69122785T2 - Musterherstellungsverfahren und Resist zum Benutzen in diesem Verfahren - Google Patents

Musterherstellungsverfahren und Resist zum Benutzen in diesem Verfahren

Info

Publication number
DE69122785T2
DE69122785T2 DE69122785T DE69122785T DE69122785T2 DE 69122785 T2 DE69122785 T2 DE 69122785T2 DE 69122785 T DE69122785 T DE 69122785T DE 69122785 T DE69122785 T DE 69122785T DE 69122785 T2 DE69122785 T2 DE 69122785T2
Authority
DE
Germany
Prior art keywords
resist
pattern making
making process
pattern
making
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69122785T
Other languages
English (en)
Other versions
DE69122785D1 (de
Inventor
Akiko Kotachi
Satoshi Takechi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of DE69122785D1 publication Critical patent/DE69122785D1/de
Application granted granted Critical
Publication of DE69122785T2 publication Critical patent/DE69122785T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/143—Electron beam

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
DE69122785T 1990-01-24 1991-01-18 Musterherstellungsverfahren und Resist zum Benutzen in diesem Verfahren Expired - Fee Related DE69122785T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012640A JP2659025B2 (ja) 1990-01-24 1990-01-24 放射線用レジスト及びその製造方法及びパターン形成方法

Publications (2)

Publication Number Publication Date
DE69122785D1 DE69122785D1 (de) 1996-11-28
DE69122785T2 true DE69122785T2 (de) 1997-02-20

Family

ID=11810968

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69122785T Expired - Fee Related DE69122785T2 (de) 1990-01-24 1991-01-18 Musterherstellungsverfahren und Resist zum Benutzen in diesem Verfahren

Country Status (5)

Country Link
US (1) US5192643A (de)
EP (1) EP0439289B1 (de)
JP (1) JP2659025B2 (de)
KR (1) KR950000201B1 (de)
DE (1) DE69122785T2 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2707785B2 (ja) * 1990-03-13 1998-02-04 富士通株式会社 レジスト組成物およびパターン形成方法
JPH0442229A (ja) * 1990-06-08 1992-02-12 Fujitsu Ltd レジスト材料およびパターンの形成方法
JP2980149B2 (ja) * 1993-09-24 1999-11-22 富士通株式会社 レジスト材料およびパターン形成方法
AU6056099A (en) * 1998-09-23 2000-04-10 E.I. Du Pont De Nemours And Company Photoresists, polymers and processes for microlithography
US6849377B2 (en) 1998-09-23 2005-02-01 E. I. Du Pont De Nemours And Company Photoresists, polymers and processes for microlithography
US6358675B1 (en) * 1998-10-02 2002-03-19 3M Innovative Properties Company Silicon-containing alcohols and polymers having silicon-containing tertiary ester groups made therefrom
JP4449176B2 (ja) * 2000-06-30 2010-04-14 住友化学株式会社 化学増幅型レジスト組成物
JP4199914B2 (ja) * 2000-11-29 2008-12-24 富士フイルム株式会社 ポジ型レジスト組成物
KR100732285B1 (ko) * 2000-12-26 2007-06-25 주식회사 하이닉스반도체 포토레지스트 단량체, 그의 중합체 및 이를 함유하는포토레지스트 조성물
US6730452B2 (en) * 2001-01-26 2004-05-04 International Business Machines Corporation Lithographic photoresist composition and process for its use
US6548219B2 (en) * 2001-01-26 2003-04-15 International Business Machines Corporation Substituted norbornene fluoroacrylate copolymers and use thereof in lithographic photoresist compositions
US6509134B2 (en) * 2001-01-26 2003-01-21 International Business Machines Corporation Norbornene fluoroacrylate copolymers and process for the use thereof

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3279090D1 (en) * 1981-12-19 1988-11-10 Daikin Ind Ltd Resist material and process for forming fine resist pattern
JPS59197036A (ja) * 1982-06-28 1984-11-08 Nissan Chem Ind Ltd パタ−ン形成用材料
JPH0682215B2 (ja) * 1986-03-31 1994-10-19 株式会社東芝 放射線用レジストおよびそれを用いたパタ−ン形成方法
US4788127A (en) * 1986-11-17 1988-11-29 Eastman Kodak Company Photoresist composition comprising an interpolymer of a silicon-containing monomer and an hydroxystyrene
JP2653148B2 (ja) * 1989-01-20 1997-09-10 富士通株式会社 レジスト組成物
JPH02239251A (ja) * 1989-03-13 1990-09-21 Fujitsu Ltd レジスト組成物
JPH03278059A (ja) * 1989-07-10 1991-12-09 Mitsubishi Electric Corp 放射線感応性重合体およびそれを含有した放射線感応性組成物

Also Published As

Publication number Publication date
EP0439289A2 (de) 1991-07-31
DE69122785D1 (de) 1996-11-28
US5192643A (en) 1993-03-09
KR950000201B1 (en) 1995-01-11
EP0439289B1 (de) 1996-10-23
JP2659025B2 (ja) 1997-09-30
JPH03217845A (ja) 1991-09-25
EP0439289A3 (de) 1991-08-21

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee