DE69113182D1 - Kristalldiametermessvorrichtung. - Google Patents

Kristalldiametermessvorrichtung.

Info

Publication number
DE69113182D1
DE69113182D1 DE69113182T DE69113182T DE69113182D1 DE 69113182 D1 DE69113182 D1 DE 69113182D1 DE 69113182 T DE69113182 T DE 69113182T DE 69113182 T DE69113182 T DE 69113182T DE 69113182 D1 DE69113182 D1 DE 69113182D1
Authority
DE
Germany
Prior art keywords
measuring device
crystal diamond
diamond measuring
crystal
measuring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69113182T
Other languages
English (en)
Other versions
DE69113182T2 (de
Inventor
Masahiko Baba
Hiroyuki Ibe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Publication of DE69113182D1 publication Critical patent/DE69113182D1/de
Application granted granted Critical
Publication of DE69113182T2 publication Critical patent/DE69113182T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/08—Measuring arrangements characterised by the use of optical techniques for measuring diameters
    • G01B11/10—Measuring arrangements characterised by the use of optical techniques for measuring diameters of objects while moving

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Length Measuring Devices By Optical Means (AREA)
DE69113182T 1990-07-28 1991-07-24 Kristalldiametermessvorrichtung. Expired - Fee Related DE69113182T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2199674A JPH0726817B2 (ja) 1990-07-28 1990-07-28 結晶径測定装置

Publications (2)

Publication Number Publication Date
DE69113182D1 true DE69113182D1 (de) 1995-10-26
DE69113182T2 DE69113182T2 (de) 1996-02-08

Family

ID=16411735

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69113182T Expired - Fee Related DE69113182T2 (de) 1990-07-28 1991-07-24 Kristalldiametermessvorrichtung.

Country Status (4)

Country Link
US (1) US5240684A (de)
EP (1) EP0472907B1 (de)
JP (1) JPH0726817B2 (de)
DE (1) DE69113182T2 (de)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4231162C2 (de) * 1992-09-17 1996-03-14 Wacker Siltronic Halbleitermat Verfahren zur Regelung der Schmelzenhöhe während des Ziehens von Einkristallen
JP2823035B2 (ja) * 1993-02-10 1998-11-11 信越半導体株式会社 半導体単結晶の引上装置及び引上方法
JPH08133887A (ja) * 1994-11-11 1996-05-28 Komatsu Electron Metals Co Ltd 半導体単結晶の直径検出装置
JP3207066B2 (ja) * 1994-12-28 2001-09-10 住友電気工業株式会社 酸化物結晶の製造方法
US5487355A (en) * 1995-03-03 1996-01-30 Motorola, Inc. Semiconductor crystal growth method
US5653799A (en) * 1995-06-02 1997-08-05 Memc Electronic Materials, Inc. Method for controlling growth of a silicon crystal
US5578284A (en) * 1995-06-07 1996-11-26 Memc Electronic Materials, Inc. Silicon single crystal having eliminated dislocation in its neck
DE19529485A1 (de) * 1995-08-10 1997-02-13 Wacker Siltronic Halbleitermat Verfahren und Vorrichtung zur Bestimmung des Durchmessers eines wachsenden Einkristalls
JP2979462B2 (ja) * 1995-09-29 1999-11-15 住友金属工業株式会社 単結晶引き上げ方法
JP2840213B2 (ja) 1995-10-30 1998-12-24 住友シチックス株式会社 単結晶の直径測定方法および直径測定装置
US5656078A (en) * 1995-11-14 1997-08-12 Memc Electronic Materials, Inc. Non-distorting video camera for use with a system for controlling growth of a silicon crystal
DE19548845B4 (de) * 1995-12-27 2008-04-10 Crystal Growing Systems Gmbh Vorrichtung und Verfahren zum Ziehen von Einkristallen nach dem Czochralski-Verfahren
US6226032B1 (en) * 1996-07-16 2001-05-01 General Signal Corporation Crystal diameter control system
US5935322A (en) * 1997-04-15 1999-08-10 Komatsu Electronic Metals Co., Ltd. Method of pulling up a single crystal semiconductor
US5846318A (en) * 1997-07-17 1998-12-08 Memc Electric Materials, Inc. Method and system for controlling growth of a silicon crystal
US5935321A (en) * 1997-08-01 1999-08-10 Motorola, Inc. Single crystal ingot and method for growing the same
EP0903428A3 (de) 1997-09-03 2000-07-19 Leybold Systems GmbH Einrichtung und Verfahren für die Bestimmung von Durchmessern eines Kristalls
DE19738438B4 (de) * 1997-09-03 2010-04-08 Crystal Growing Systems Gmbh Einrichtung und Verfahren für die Bestimmung des Durchmessers eines Kristalls
US5922127A (en) * 1997-09-30 1999-07-13 Memc Electronic Materials, Inc. Heat shield for crystal puller
US5882402A (en) * 1997-09-30 1999-03-16 Memc Electronic Materials, Inc. Method for controlling growth of a silicon crystal
US6030451A (en) * 1998-01-12 2000-02-29 Seh America, Inc. Two camera diameter control system with diameter tracking for silicon ingot growth
US6106612A (en) * 1998-06-04 2000-08-22 Seh America Inc. Level detector and method for detecting a surface level of a material in a container
US5986748A (en) * 1998-08-21 1999-11-16 Seh America Inc Dual beam alignment device and method
US6171391B1 (en) 1998-10-14 2001-01-09 Memc Electronic Materials, Inc. Method and system for controlling growth of a silicon crystal
JP5109928B2 (ja) * 2008-10-21 2012-12-26 信越半導体株式会社 単結晶直径の検出方法、及びこれを用いた単結晶の製造方法、並びに単結晶製造装置
US20100242831A1 (en) * 2009-03-31 2010-09-30 Memc Electronic Materials, Inc. Methods for weighing a pulled object having a changing weight
JP5664573B2 (ja) * 2012-02-21 2015-02-04 信越半導体株式会社 シリコン融液面の高さ位置の算出方法およびシリコン単結晶の引上げ方法ならびにシリコン単結晶引上げ装置
CN109576780A (zh) * 2018-12-28 2019-04-05 宁夏隆基硅材料有限公司 一种籽晶熔接方法及设备

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58135197A (ja) * 1982-02-02 1983-08-11 Toshiba Corp 結晶製造装置
JPS6042296A (ja) * 1983-08-16 1985-03-06 Hamamatsu Photonics Kk 引上中に単結晶の直径を制御する装置
JPH0631194B2 (ja) * 1984-02-22 1994-04-27 株式会社東芝 単結晶の製造方法
JPS61266391A (ja) * 1985-05-20 1986-11-26 Agency Of Ind Science & Technol 半導体結晶の引き上げ成長装置
JPH0649631B2 (ja) * 1986-10-29 1994-06-29 信越半導体株式会社 結晶径測定装置
JPH0791149B2 (ja) * 1987-01-09 1995-10-04 九州電子金属株式会社 Ｃｚ炉内の単結晶シリコン振れ幅検出方法
JPS63256594A (ja) * 1987-04-13 1988-10-24 Kyushu Denshi Kinzoku Kk Ｃｚ炉内の結晶直径計測方法
JPS6424089A (en) * 1987-07-21 1989-01-26 Shinetsu Handotai Kk Device for adjusting initial position of melt surface
JPS6483595A (en) * 1987-09-25 1989-03-29 Shinetsu Handotai Kk Device for measuring crystal diameter
JPH0797014B2 (ja) * 1988-10-28 1995-10-18 信越半導体株式会社 中心線ずれ量測定装置

Also Published As

Publication number Publication date
US5240684A (en) 1993-08-31
DE69113182T2 (de) 1996-02-08
EP0472907A3 (en) 1993-01-20
JPH0726817B2 (ja) 1995-03-29
EP0472907B1 (de) 1995-09-20
JPH0486509A (ja) 1992-03-19
EP0472907A2 (de) 1992-03-04

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee