DE69112235T2 - Optisches Gate-Array. - Google Patents
Optisches Gate-Array.Info
- Publication number
- DE69112235T2 DE69112235T2 DE69112235T DE69112235T DE69112235T2 DE 69112235 T2 DE69112235 T2 DE 69112235T2 DE 69112235 T DE69112235 T DE 69112235T DE 69112235 T DE69112235 T DE 69112235T DE 69112235 T2 DE69112235 T2 DE 69112235T2
- Authority
- DE
- Germany
- Prior art keywords
- gate array
- optical gate
- optical
- array
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000003287 optical effect Effects 0.000 title 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
- G02F1/01716—Optically controlled superlattice or quantum well devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F3/00—Optical logic elements; Optical bistable devices
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F3/00—Optical logic elements; Optical bistable devices
- G02F3/02—Optical bistable devices
- G02F3/028—Optical bistable devices based on self electro-optic effect devices [SEED]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/14—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2203/00—Function characteristic
- G02F2203/02—Function characteristic reflective
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Nanotechnology (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Biophysics (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Life Sciences & Earth Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011763A JPH03216628A (ja) | 1990-01-23 | 1990-01-23 | 光三端子素子 |
JP2179481A JP2692013B2 (ja) | 1990-07-09 | 1990-07-09 | 光ゲートアレイ |
JP22834990A JPH0810308B2 (ja) | 1990-08-31 | 1990-08-31 | 光ゲートアレイ |
JP2295283A JP2657289B2 (ja) | 1990-11-02 | 1990-11-02 | 光ゲートアレイ |
JP2295282A JP2657288B2 (ja) | 1990-11-02 | 1990-11-02 | 光ゲートアレイ |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69112235D1 DE69112235D1 (de) | 1995-09-28 |
DE69112235T2 true DE69112235T2 (de) | 1996-06-13 |
Family
ID=27519328
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69112235T Expired - Fee Related DE69112235T2 (de) | 1990-01-23 | 1991-01-22 | Optisches Gate-Array. |
Country Status (3)
Country | Link |
---|---|
US (1) | US5451767A (de) |
EP (1) | EP0443332B1 (de) |
DE (1) | DE69112235T2 (de) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4237608A1 (de) * | 1992-11-06 | 1994-05-11 | Telefunken Microelectron | Integrierte Halbleiteranordnung mit Standardelementen |
IT1273064B (it) * | 1994-03-22 | 1997-07-04 | Cselt Centro Studi Lab Telecom | Dispositivo per l'elaborazione ottica di radiazioni luminose |
US5480813A (en) * | 1994-06-21 | 1996-01-02 | At&T Corp. | Accurate in-situ lattice matching by reflection high energy electron diffraction |
GB9603052D0 (en) * | 1996-02-14 | 1996-04-10 | Philips Electronics Nv | Image sensor |
DE69840302D1 (de) | 1997-10-16 | 2009-01-15 | California Inst Of Techn | Zweiband infrarot quantentopf-detektoranordnung |
FR2811770B1 (fr) * | 2000-07-11 | 2003-01-17 | France Telecom | Structure d'absorbant saturable, notamment pour composant optique de regeneration, et procede pour sa realisation |
JP2003243696A (ja) * | 2001-12-13 | 2003-08-29 | Nippon Sheet Glass Co Ltd | 自己走査型発光素子アレイチップ |
JP2004281686A (ja) * | 2003-03-14 | 2004-10-07 | Sumitomo Electric Ind Ltd | 半導体発光デバイス及びその製造方法 |
JP3781015B2 (ja) * | 2003-04-24 | 2006-05-31 | 横河電機株式会社 | 光信号処理装置 |
US7706692B2 (en) * | 2004-09-29 | 2010-04-27 | Finisar Corporation | Consumer electronics with optical communication interface |
US7860398B2 (en) * | 2005-09-15 | 2010-12-28 | Finisar Corporation | Laser drivers for closed path optical cables |
US8083417B2 (en) * | 2006-04-10 | 2011-12-27 | Finisar Corporation | Active optical cable electrical adaptor |
US7876989B2 (en) * | 2006-04-10 | 2011-01-25 | Finisar Corporation | Active optical cable with integrated power |
US8769171B2 (en) | 2007-04-06 | 2014-07-01 | Finisar Corporation | Electrical device with electrical interface that is compatible with integrated optical cable receptacle |
US8244124B2 (en) | 2007-04-30 | 2012-08-14 | Finisar Corporation | Eye safety mechanism for use in optical cable with electrical interfaces |
US7995877B1 (en) * | 2008-07-30 | 2011-08-09 | Sandia Corporation | Optical NAND gate |
KR101520029B1 (ko) * | 2008-12-31 | 2015-05-15 | 삼성전자주식회사 | 고정세화 패턴을 갖는 광 변조기 |
KR101547327B1 (ko) * | 2009-01-15 | 2015-09-07 | 삼성전자주식회사 | 광 이미지 변조기와 이를 포함하는 광학장치와 광 이미지 변조기의 제조 및 구동방법 |
TWI425626B (zh) * | 2010-06-17 | 2014-02-01 | Univ Nat Central | Series complex complex photodiode structure |
CN105556680B (zh) * | 2013-05-22 | 2017-12-22 | 王士原 | 微结构增强型吸收光敏装置 |
US10446700B2 (en) | 2013-05-22 | 2019-10-15 | W&Wsens Devices, Inc. | Microstructure enhanced absorption photosensitive devices |
US10700225B2 (en) | 2013-05-22 | 2020-06-30 | W&Wsens Devices, Inc. | Microstructure enhanced absorption photosensitive devices |
US11121271B2 (en) | 2013-05-22 | 2021-09-14 | W&WSens, Devices, Inc. | Microstructure enhanced absorption photosensitive devices |
US10468543B2 (en) | 2013-05-22 | 2019-11-05 | W&Wsens Devices, Inc. | Microstructure enhanced absorption photosensitive devices |
CN107078145B (zh) | 2014-11-18 | 2019-05-07 | 王士原 | 经微结构增强吸收的光敏器件 |
CN110880539B (zh) * | 2018-12-06 | 2021-09-24 | 希烽光电科技(南京)有限公司 | 波导集成雪崩光电二极管 |
CN114864711B (zh) * | 2022-06-08 | 2023-07-28 | 西安电子科技大学 | 基于极性二维材料量子阱的pn型β-Ga2O3日盲深紫外光电探测器 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4716449A (en) * | 1984-03-14 | 1987-12-29 | American Telephone And Telegraph Company At&T Bell Laboratories | Nonlinear and bistable optical device |
US4546244A (en) * | 1984-03-14 | 1985-10-08 | At&T Bell Laboratories | Nonlinear and bistable optical device |
USRE32893E (en) * | 1984-03-14 | 1989-03-21 | American Telephone And Telegraph Company, At&T Bell Laboratories | Nonlinear and bistable optical device |
US4754132A (en) * | 1987-04-24 | 1988-06-28 | American Telephone And Telegraph Company, At&T Bell Laboratories | Symmetric optical device with quantum well absorption |
US4961198A (en) * | 1988-01-14 | 1990-10-02 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device |
GB8813483D0 (en) * | 1988-06-08 | 1988-07-13 | Gen Electric Co Plc | Spatial light modulators |
US4952791A (en) * | 1988-12-12 | 1990-08-28 | At&T Bell Laboratories | Monolithic apparatus comprising optically interconnected quantum well devices |
US5020153A (en) * | 1989-02-08 | 1991-05-28 | At&T Bell Laboratories | Tunable narrowband receiver utilizing distributed Bragg reflector laser structure |
-
1991
- 1991-01-22 EP EP91100737A patent/EP0443332B1/de not_active Expired - Lifetime
- 1991-01-22 DE DE69112235T patent/DE69112235T2/de not_active Expired - Fee Related
-
1992
- 1992-08-13 US US07/928,530 patent/US5451767A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US5451767A (en) | 1995-09-19 |
DE69112235D1 (de) | 1995-09-28 |
EP0443332B1 (de) | 1995-08-23 |
EP0443332A1 (de) | 1991-08-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |