DE69112217D1 - Lasermatrix in form eines mikrochips. - Google Patents
Lasermatrix in form eines mikrochips.Info
- Publication number
- DE69112217D1 DE69112217D1 DE69112217T DE69112217T DE69112217D1 DE 69112217 D1 DE69112217 D1 DE 69112217D1 DE 69112217 T DE69112217 T DE 69112217T DE 69112217 T DE69112217 T DE 69112217T DE 69112217 D1 DE69112217 D1 DE 69112217D1
- Authority
- DE
- Germany
- Prior art keywords
- wafer
- microchip
- laser matrix
- pixel
- mirrors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000011159 matrix material Substances 0.000 title 1
- 239000000463 material Substances 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 abstract 1
- 239000007787 solid Substances 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/0627—Construction or shape of active medium the resonator being monolithic, e.g. microlaser
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4249—Packages, e.g. shape, construction, internal or external details comprising arrays of active devices and fibres
- G02B6/425—Optical features
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
- H01S3/09415—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode the pumping beam being parallel to the lasing mode of the pumped medium, e.g. end-pumping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
- H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
- H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
- H01S3/109—Frequency multiplication, e.g. harmonic generation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/42—Arrays of surface emitting lasers
- H01S5/423—Arrays of surface emitting lasers having a vertical cavity
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/39—Non-linear optics for parametric generation or amplification of light, infrared or ultraviolet waves
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/0602—Crystal lasers or glass lasers
- H01S3/0604—Crystal lasers or glass lasers in the form of a plate or disc
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
- H01S3/0632—Thin film lasers in which light propagates in the plane of the thin film
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/08018—Mode suppression
- H01S3/08022—Longitudinal modes
- H01S3/08031—Single-mode emission
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1601—Solid materials characterised by an active (lasing) ion
- H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
- H01S3/1611—Solid materials characterised by an active (lasing) ion rare earth neodymium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/163—Solid materials characterised by a crystal matrix
- H01S3/164—Solid materials characterised by a crystal matrix garnet
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/163—Solid materials characterised by a crystal matrix
- H01S3/164—Solid materials characterised by a crystal matrix garnet
- H01S3/1643—YAG
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/23—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
- H01S3/2383—Parallel arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
- H01S5/4062—Edge-emitting structures with an external cavity or using internal filters, e.g. Talbot filters
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- General Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Lasers (AREA)
- Semiconductor Lasers (AREA)
- Apparatus Associated With Microorganisms And Enzymes (AREA)
- Investigating Or Analysing Materials By The Use Of Chemical Reactions (AREA)
- Immobilizing And Processing Of Enzymes And Microorganisms (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/571,073 US5115445A (en) | 1988-02-02 | 1990-08-22 | Microchip laser array |
PCT/US1991/005962 WO1992003862A1 (en) | 1990-08-22 | 1991-08-21 | Microchip laser array |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69112217D1 true DE69112217D1 (de) | 1995-09-21 |
DE69112217T2 DE69112217T2 (de) | 1996-04-04 |
Family
ID=24282233
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69112217T Expired - Fee Related DE69112217T2 (de) | 1990-08-22 | 1991-08-21 | Lasermatrix in form eines mikrochips. |
Country Status (9)
Country | Link |
---|---|
US (1) | US5115445A (de) |
EP (1) | EP0544825B1 (de) |
JP (1) | JPH06500432A (de) |
KR (1) | KR930701843A (de) |
AT (1) | ATE126630T1 (de) |
AU (1) | AU8719991A (de) |
CA (1) | CA2089892A1 (de) |
DE (1) | DE69112217T2 (de) |
WO (1) | WO1992003862A1 (de) |
Families Citing this family (58)
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US5256164A (en) * | 1988-02-02 | 1993-10-26 | Massachusetts Institute Of Technology | Method of fabricating a microchip laser |
US5121231A (en) * | 1990-04-06 | 1992-06-09 | University Of Southern California | Incoherent/coherent multiplexed holographic recording for photonic interconnections and holographic optical elements |
FR2688637B1 (fr) * | 1991-03-13 | 1998-08-28 | France Telecom | Laser de puissance a emission par la surface et procede de fabrication de ce laser. |
DE4211899C2 (de) * | 1992-04-09 | 1998-07-16 | Daimler Benz Aerospace Ag | Mikrosystem-Laseranordnung und Mikrosystem-Laser |
DE4215797A1 (de) * | 1992-05-13 | 1993-11-25 | Deutsche Aerospace | Lasersystem mit mikromechanisch bewegten Spiegel |
DE4229657C2 (de) * | 1992-09-04 | 1996-06-20 | Daimler Benz Aerospace Ag | Ein- oder zweidimensionale Anordnung von Laser-Phasenmodulatoren |
DE4239653C2 (de) * | 1992-11-26 | 1996-11-07 | Daimler Benz Aerospace Ag | Kühlanordnung für ein Festkörperlaserarray |
US5289482A (en) * | 1992-12-30 | 1994-02-22 | The United States Of America As Represented By The Secretary Of The Navy | Intracavity-pumped 2.1 μm Ho3+ :YAG laser |
ATE193166T1 (de) * | 1993-08-26 | 2000-06-15 | Laser Power Corp | Tiefblauer mikrolaser |
US5534950A (en) * | 1993-10-04 | 1996-07-09 | Laser Power Corporation | High resolution image projection system and method employing lasers |
JP3341795B2 (ja) * | 1994-01-13 | 2002-11-05 | 富士写真フイルム株式会社 | レーザ走査発振装置 |
FR2715514B1 (fr) * | 1994-01-21 | 1996-02-16 | Commissariat Energie Atomique | Laser à direction de faisceau controlable. |
US5796766A (en) * | 1994-08-23 | 1998-08-18 | Laser Power Corporation | Optically transparent heat sink for longitudinally cooling an element in a laser |
US5990983A (en) * | 1994-09-30 | 1999-11-23 | Laser Power Corporation | High resolution image projection system and method employing lasers |
US5488619A (en) * | 1994-10-06 | 1996-01-30 | Trw Inc. | Ultracompact Q-switched microlasers and related method |
US5513204A (en) * | 1995-04-12 | 1996-04-30 | Optical Concepts, Inc. | Long wavelength, vertical cavity surface emitting laser with vertically integrated optical pump |
FR2734093B1 (fr) * | 1995-05-12 | 1997-06-06 | Commissariat Energie Atomique | Oscillateur parametrique optique monolithique pompe par un microlaser |
US5661590A (en) * | 1995-06-05 | 1997-08-26 | California Institute Of Technology | Quantum well infrared photo detector and monolithic chopper |
US5898211A (en) * | 1996-04-30 | 1999-04-27 | Cutting Edge Optronics, Inc. | Laser diode package with heat sink |
US6101201A (en) * | 1996-10-21 | 2000-08-08 | Melles Griot, Inc. | Solid state laser with longitudinal cooling |
US6154259A (en) * | 1996-11-27 | 2000-11-28 | Photera Technologies, Inc. | Multi-beam laser scanning display system with speckle elimination |
US6240113B1 (en) | 1998-02-27 | 2001-05-29 | Litton Systems, Inc. | Microlaser-based electro-optic system and associated fabrication method |
US6072815A (en) * | 1998-02-27 | 2000-06-06 | Litton Systems, Inc. | Microlaser submount assembly and associates packaging method |
US5913108A (en) | 1998-04-30 | 1999-06-15 | Cutting Edge Optronics, Inc. | Laser diode packaging |
FR2784194A1 (fr) * | 1998-10-01 | 2000-04-07 | Commissariat Energie Atomique | Dispositif d'imagerie utilisant un ensemble de microlasers et procede de fabrication de ceux-ci |
US6215598B1 (en) | 1998-10-05 | 2001-04-10 | Ruey Jennifer Hwu | Apparatus and method for concentrating beams from broad area diode lasers, diode laser bars and/ or diode laser arrays |
US6636538B1 (en) | 1999-03-29 | 2003-10-21 | Cutting Edge Optronics, Inc. | Laser diode packaging |
US6624925B2 (en) * | 2001-03-13 | 2003-09-23 | Textron Systems Corporation | Optical amplifier employing an active doped unitary amplifier |
US6667999B2 (en) * | 2001-08-17 | 2003-12-23 | Textron Corporation | Cooling of high power laser systems |
DE10204246B4 (de) * | 2002-02-02 | 2012-12-06 | Tesat-Spacecom Gmbh & Co.Kg | Festkörper-Laserverstärkersystem |
US6894273B2 (en) * | 2002-03-22 | 2005-05-17 | Agilent Technologies, Inc. | Systems and methods for producing modulated light beams |
US6853660B2 (en) * | 2002-10-16 | 2005-02-08 | Eastman Kodak Company | Organic laser cavity arrays |
US7170919B2 (en) * | 2003-06-23 | 2007-01-30 | Northrop Grumman Corporation | Diode-pumped solid-state laser gain module |
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US7495848B2 (en) * | 2003-07-24 | 2009-02-24 | Northrop Grumman Corporation | Cast laser optical bench |
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US7907646B2 (en) * | 2005-07-28 | 2011-03-15 | Panasonic Corporation | Laser light source and display device |
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US7769060B1 (en) * | 2005-09-14 | 2010-08-03 | Panasonic Corporation | Laser light source, and display device using the same |
US20070280305A1 (en) * | 2006-06-05 | 2007-12-06 | Oved Zucker | Q-switched cavity dumped laser array |
US7656915B2 (en) * | 2006-07-26 | 2010-02-02 | Northrop Grumman Space & Missions Systems Corp. | Microchannel cooler for high efficiency laser diode heat extraction |
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US8345720B2 (en) * | 2009-07-28 | 2013-01-01 | Northrop Grumman Systems Corp. | Laser diode ceramic cooler having circuitry for control and feedback of laser diode performance |
BR112013009986A2 (pt) * | 2010-11-02 | 2018-03-13 | Baker Hughes Inc | método e aparelho para estimar uma propriedade de fluido no fundo do poço usando-se um laser dopado com terras raras |
US9590388B2 (en) | 2011-01-11 | 2017-03-07 | Northrop Grumman Systems Corp. | Microchannel cooler for a single laser diode emitter based system |
US8937976B2 (en) | 2012-08-15 | 2015-01-20 | Northrop Grumman Systems Corp. | Tunable system for generating an optical pulse based on a double-pass semiconductor optical amplifier |
KR101458696B1 (ko) * | 2013-04-19 | 2014-11-05 | 이기창 | 고속 전자식 3차원 레이저 스캐너 장치 |
JP6268004B2 (ja) * | 2014-03-12 | 2018-01-24 | 浜松ホトニクス株式会社 | 半導体レーザ装置 |
JP2016015476A (ja) * | 2014-06-11 | 2016-01-28 | キヤノン株式会社 | 面発光レーザアレイ、固体レーザ装置、およびそれを備えた被検体情報取得装置 |
JP6257807B2 (ja) * | 2015-01-09 | 2018-01-10 | 三菱電機株式会社 | アレイ型波長変換レーザ装置 |
CN107910748A (zh) * | 2017-10-30 | 2018-04-13 | 深圳瑞波光电子有限公司 | 半导体激光器巴条、半导体激光器单管及其制备方法 |
CZ307955B6 (cs) * | 2018-05-17 | 2019-09-11 | Fyzikální Ústav Av Čr, V. V. I. | Laserový systém v uspořádání nestabilního optického rezonátoru poskytující tvarovaný profil intenzity výstupního svazku a způsob jeho vytvoření |
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US4002725A (en) * | 1975-07-09 | 1977-01-11 | Bell Telephone Laboratories, Incorporated | Process for growing acicula of rare earth pentaphosphates |
US4047124A (en) * | 1975-12-31 | 1977-09-06 | International Business Machines Corporation | Planar solid state laser array |
US4156206A (en) * | 1976-12-30 | 1979-05-22 | International Business Machines Corporation | Grating coupled waveguide laser apparatus |
US4468850A (en) * | 1982-03-29 | 1984-09-04 | Massachusetts Institute Of Technology | GaInAsP/InP Double-heterostructure lasers |
US4739507A (en) * | 1984-11-26 | 1988-04-19 | Board Of Trustees, Stanford University | Diode end pumped laser and harmonic generator using same |
EP0192850A1 (de) * | 1985-01-07 | 1986-09-03 | Siemens Aktiengesellschaft | Monolithisch integriertes optoelektronisches Halbleiterbauelement |
US4784722A (en) * | 1985-01-22 | 1988-11-15 | Massachusetts Institute Of Technology | Method forming surface emitting diode laser |
US4718070A (en) * | 1985-01-22 | 1988-01-05 | Massachusetts Institute Of Technology | Surface emitting diode laser |
US4777148A (en) * | 1985-01-30 | 1988-10-11 | Massachusetts Institute Of Technology | Process for making a mesa GaInAsP/InP distributed feedback laser |
US4722092A (en) * | 1985-01-30 | 1988-01-26 | Massachusetts Institute Of Technology | GaInAsP/InP distributed feedback laser |
US4677629A (en) * | 1985-09-30 | 1987-06-30 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Means for phase locking the outputs of a surface emitting laser diode array |
JPS62128587A (ja) * | 1985-11-29 | 1987-06-10 | Matsushita Electric Ind Co Ltd | 半導体レ−ザ |
US4807238A (en) * | 1986-03-12 | 1989-02-21 | Ricoh Co., Ltd. | A semiconductor laser device |
US4734912A (en) * | 1986-06-06 | 1988-03-29 | Lightwave Electronics Corp. | Laser diode end pumped Nd:YAG single mode laser |
US4743091A (en) * | 1986-10-30 | 1988-05-10 | Daniel Gelbart | Two dimensional laser diode array |
US4797893A (en) * | 1987-06-09 | 1989-01-10 | Virgo Optics, Inc. | Microlaser system |
US4953166A (en) * | 1988-02-02 | 1990-08-28 | Massachusetts Institute Of Technology | Microchip laser |
FI83676C (fi) * | 1988-07-15 | 1994-03-15 | Timo Piirto | Oevre teln av ett naet och foerfarande foer framstaellning av densamma |
US4881237A (en) * | 1988-08-26 | 1989-11-14 | Massachusetts Institute Of Technology | Hybrid two-dimensional surface-emitting laser arrays |
US4935939A (en) * | 1989-05-24 | 1990-06-19 | Liau Zong Long | Surface emitting laser with monolithic integrated lens |
WO1991001057A1 (en) * | 1989-07-06 | 1991-01-24 | Australian Electro Optics Pty. Ltd. | Grouped, phase-locked, diode arrays |
-
1990
- 1990-08-22 US US07/571,073 patent/US5115445A/en not_active Expired - Fee Related
-
1991
- 1991-08-21 EP EP91918002A patent/EP0544825B1/de not_active Expired - Lifetime
- 1991-08-21 AT AT91918002T patent/ATE126630T1/de not_active IP Right Cessation
- 1991-08-21 WO PCT/US1991/005962 patent/WO1992003862A1/en active IP Right Grant
- 1991-08-21 CA CA002089892A patent/CA2089892A1/en not_active Abandoned
- 1991-08-21 AU AU87199/91A patent/AU8719991A/en not_active Abandoned
- 1991-08-21 JP JP3516638A patent/JPH06500432A/ja active Pending
- 1991-08-21 DE DE69112217T patent/DE69112217T2/de not_active Expired - Fee Related
-
1993
- 1993-02-22 KR KR1019930700504A patent/KR930701843A/ko not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
DE69112217T2 (de) | 1996-04-04 |
EP0544825B1 (de) | 1995-08-16 |
US5115445A (en) | 1992-05-19 |
KR930701843A (ko) | 1993-06-12 |
ATE126630T1 (de) | 1995-09-15 |
CA2089892A1 (en) | 1992-02-23 |
EP0544825A1 (de) | 1993-06-09 |
WO1992003862A1 (en) | 1992-03-05 |
JPH06500432A (ja) | 1994-01-13 |
AU8719991A (en) | 1992-03-17 |
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